LACAITA, ANDREA LEONARDO
 Distribuzione geografica
Continente #
NA - Nord America 25.238
EU - Europa 8.506
AS - Asia 1.871
AF - Africa 48
OC - Oceania 18
SA - Sud America 18
Continente sconosciuto - Info sul continente non disponibili 15
Totale 35.714
Nazione #
US - Stati Uniti d'America 24.815
IT - Italia 2.266
UA - Ucraina 1.383
AT - Austria 983
SE - Svezia 844
DE - Germania 835
VN - Vietnam 810
FI - Finlandia 630
CN - Cina 492
GB - Regno Unito 434
CA - Canada 415
IE - Irlanda 415
ES - Italia 162
FR - Francia 137
BE - Belgio 132
KR - Corea 129
JO - Giordania 110
NL - Olanda 109
IN - India 104
JP - Giappone 52
TW - Taiwan 44
SG - Singapore 38
CI - Costa d'Avorio 36
TR - Turchia 31
CH - Svizzera 26
HK - Hong Kong 20
RU - Federazione Russa 20
RO - Romania 19
PL - Polonia 16
EU - Europa 15
HU - Ungheria 15
AU - Australia 14
BR - Brasile 14
GR - Grecia 13
IL - Israele 11
IR - Iran 11
AL - Albania 9
BG - Bulgaria 9
SI - Slovenia 9
DK - Danimarca 8
PT - Portogallo 8
MU - Mauritius 6
EE - Estonia 5
MD - Moldavia 5
NZ - Nuova Zelanda 4
CY - Cipro 3
CZ - Repubblica Ceca 3
LT - Lituania 3
MO - Macao, regione amministrativa speciale della Cina 3
MX - Messico 3
CR - Costa Rica 2
EG - Egitto 2
HR - Croazia 2
MN - Mongolia 2
MY - Malesia 2
RS - Serbia 2
SA - Arabia Saudita 2
ZA - Sudafrica 2
AN - Antille olandesi 1
AR - Argentina 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CL - Cile 1
GE - Georgia 1
GH - Ghana 1
GL - Groenlandia 1
ID - Indonesia 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MK - Macedonia 1
NO - Norvegia 1
PK - Pakistan 1
PR - Porto Rico 1
PY - Paraguay 1
QA - Qatar 1
SC - Seychelles 1
VE - Venezuela 1
Totale 35.714
Città #
Fairfield 4.026
Woodbridge 2.739
Chandler 1.996
Houston 1.910
Ashburn 1.850
Wilmington 1.791
Seattle 1.734
Cambridge 1.420
Ann Arbor 1.377
Vienna 974
Jacksonville 862
Dearborn 616
Milan 592
Lawrence 464
Medford 453
Dong Ket 431
Dublin 400
Ottawa 375
Beijing 234
San Diego 228
Des Moines 227
Helsinki 191
Málaga 152
Brussels 112
Amman 110
Redwood City 78
Washington 77
New York 72
Grafing 71
Amsterdam 61
London 61
Norwalk 59
Redmond 52
Turin 51
Columbus 46
Duncan 42
Shanghai 42
Boardman 41
Abidjan 36
Verona 35
Mountain View 34
Legnano 29
Hefei 28
Auburn Hills 27
Falls Church 27
Indiana 27
Izmir 27
Edinburgh 25
Rome 24
Seoul 24
Los Angeles 23
Princeton 23
Taipei 23
Tokyo 23
Bergamo 22
Nanjing 21
Pohang 21
Seongnam 20
Miami 18
Capelle 17
Guangzhou 17
Kunming 16
Wuhan 16
Chicago 15
Menlo Park 14
Naples 14
Warsaw 14
Fremont 12
Jinan 12
Zurich 12
Atlanta 11
Dallas 11
Ferrara 11
Nanchang 11
Portland 11
Prescot 11
Tel Aviv 11
Brescia 10
Montreal 10
North York 10
Budapest 9
Hounslow 9
Kilburn 9
Monza 9
Pasadena 9
Seriate 9
Sofia 9
Stockholm 9
Bari 8
Heverlee 8
Madrid 8
Mapello 8
Pavia 8
San Francisco 8
Athens 7
Bresso 7
Central District 7
Copenhagen 7
Frankfurt am Main 7
Groningen 7
Totale 26.982
Nome #
High Scale-Factor Stability Frequency-Modulated MEMS Gyroscope: 3-Axis Sensor and Integrated Electronics Design 212
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 190
A 1.7 GHz Fractional-N Frequency Synthesizer Based on a Multiplying Delay-Locked Loop 167
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 164
A 68.6fs_rms-Total-integrated-Jitter and 1.5us-Locking-Time Fractional-N Bang-Bang PLL Based on Type-II Gear Shifting and Adaptive Frequency Switching 154
Power-jitter trade-off analysis in digital-to-time converters 153
A 30-GHz Digital Sub-Sampling Fractional-N PLL With -238.6-dB Jitter-Power Figure of Merit in 65-nm LP CMOS 153
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 151
A 11-15 GHz CMOS /2 Frequency Divider For Broad-Band I/Q Generation 146
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 139
A 1.7GHz MDLL-based fractional-N frequency synthesizer with 1.4ps RMS integrated jitter and 3mW power using a 1b TDC 135
A Monte Carlo investigation of nanocrystal memory reliability 134
A 1.6-to-3.0-GHz Fractional-N MDLL With a Digital-to-Time Converter Range-Reduction Technique Achieving 397-fs Jitter at 2.5-mW Power 131
Assessment of threshold switching dynamics in phase-change chalcogenide memories 129
A 160 ua, 8 mdps/rt-Hz frequency-modulated MEMS yaw gyroscope 127
RTN effects in scaled Flash memory arrays 123
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 123
First detection of single-electron charging of the floating gate of NAND Flash memory cells 121
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures 120
An integrated low-noise multichannel system for neural signals amplification 118
The First Frequency-Modulated (FM) Pitch Gyroscope 116
Automatic Amplitude Control Loop for a 2-V, 2.5-GHz LC-tank VCO 114
A 2.9–4.0-GHz Fractional-N Digital PLL With Bang-Bang Phase Detector and 560-fsrms Integrated Jitter at 4.5-mW Power 114
16.7 A 30GHz Digital Sub-Sampling Fractional-N PLL with 198fs rms Jitter in 65nm LP CMOS 114
Random telegraph noise in 3d nand flash memories 114
A 70.7-dB SNDR 100-kS/s 14-b SAR ADC with attenuation capacitance calibration in 0.35-µm CMOS 113
Efficient Behavioral Simulation of Charge-Pump Phase-Locked Loops 113
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 113
A Background Calibration Technique to Control the Bandwidth of Digital PLLs 112
A 12.9-to-15.1GHz Digital PLL Based on a Bang-Bang Phase Detector with Adaptively Optimized Noise Shaping Achieving 107.6fs Integrated Jitter 112
A Wideband Fractional-N PLL With Suppressed Charge-Pump Noise and Automatic Loop Filter Calibration 112
Investigation of the turn-on of T-RAM cells under transient conditions 111
A 1.6-to-3.0-GHz Fractional-N MDLL with a Digital-to-Time Converter Range-Reduction Technique Achieving 397fs Jitter at 2.5-mW Power 111
A 11-15 GHz CMOS ÷2 Frequency Divider For Broad-Band I/Q Generation 111
A comparative study of characterization techniques for oxide reliability in Flash memories 110
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 109
Efficient Calculation of the Impulse Sensitivity Function in Oscillators 109
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 109
Random telegraph signal noise in phase change memory devices 109
A varactor configuration minimizing the amplitude-to-phase noise conversion in VCOs 108
Impact of thermoelectric effects on phase change memory characteristics 108
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 107
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 107
Quantization effects in All-Digital Phase-Locked Loops 107
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 106
Fundamental Power Limits of SAR and ΔΣ Analog-to-Digital Converters 105
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 104
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 104
A Multi-Channel Low-Power System-on-Chip for in Vivo Recording and Wireless Transmission of Neural Spikes 103
A 2-V 2.5-GHz – 104-dBc/Hz at 100kHz Fully Integrated VCO with Wide-Band Low-Noise Automatic Amplitude Control Loop 102
A 64-Channel 965-μW Neural Recording SoC with UWB Wireless Transmission in 130-nm CMOS 102
Fast-switching analog PLL with finite-impulse response 101
An efficient tool for the assisted design of SAR ADCs capacitive DACs 101
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 101
Cell-to-Cell and Cycle-to-Cycle Retention Statistics in Phase-Change Memory Arrays 101
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 100
Ultrafast Single Photon Avalanche Diodes without slow tails in the pulse response 100
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability 100
A Sub-400-nT/√Hz, 775-μW, Multi-Loop MEMS Magnetometer With Integrated Readout Electronics 100
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 99
A recombination- and trap-assisted tunneling model for stress-induced leakage current 99
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique 99
A new transient model for recovery and relaxation oscillations in phase change memories 99
Simple model for the performance of realistic AMR magnetic field sensors 99
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 99
Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories 99
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 98
Bipolar switching in chalcogenide phase change memory 98
20 ps timing resolution with single-photon avalanche diodes 98
Low-power CMOS IEEE 802.11a/g Signal Separator for Outphasing Transmitter 97
Fully Integrated Systems for Neural Signal Recording: Technology Perspective and Low-Noise Front-End Design 97
A 66-fs-rms Jitter 12.8-to-15.2-GHz Fractional-N Bang-Bang PLL With Digital Frequency-Error Recovery for Fast Locking 97
Statistical analysis of nanocrystal memory reliability 97
A multi-tank LC-oscillator 97
Characterization of transient currents in HfO2 capacitors in the short timescale 96
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 96
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 95
A 13.5-mW 5-GHz Frequency Synthesizer with Dynamic Logic Frequency Divider 95
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 95
Bipolar switching operation in phase change memory devices for high temperature retention 95
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 95
Impact ionization in silicon: A microscopic view. 94
Limits to the timing performance of single-photon avalanche diodes 94
Separation of electron and hole traps by transient current analysis 94
Modeling of dynamic operation of T-RAM cells 94
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 94
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 93
A wideband voltage-biased LC oscillator with reduced flicker noise up-conversion 93
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 93
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 93
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 93
A Circuit Technique Improving the Image Rejection of RF Front-Ends 93
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 92
Voltage-controlled relaxation oscillations in phase-change memory devices 92
Different types of defects in silicon dioxide characterized by their transient behavior 92
Analysis and Minimization of Flicker Noise Up-Conversion in Voltage-Biased Oscillators 92
Electrical Conductivity Discontinuity at Melt in Phase Change Memory 92
Modeling of Atomic Migration Phenomena in Phase Change Memory Devices 92
Time-Variant Modeling and Analysis of Multiplying Delay-Locked Loops 92
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 92
Totale 10.986
Categoria #
all - tutte 104.416
article - articoli 55.834
book - libri 643
conference - conferenze 46.768
curatela - curatele 167
other - altro 0
patent - brevetti 227
selected - selezionate 0
volume - volumi 777
Totale 208.832


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.840 0 0 0 0 0 0 0 0 0 0 1.500 1.340
2019/20209.129 616 556 193 712 1.197 1.142 1.202 785 1.093 453 845 335
2020/20215.848 545 288 601 271 786 264 352 475 325 628 344 969
2021/20224.647 181 630 369 230 539 177 311 269 301 253 490 897
2022/20234.914 571 321 153 510 568 667 55 397 831 297 443 101
2023/20241.924 123 497 168 199 143 244 138 118 38 254 2 0
Totale 36.227