Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current operation and excellent high-T reliability. DC and pulsed switching characteristics are explained by ion migration in the chalcogenide layer, as supported by TEM and T-dependent studies. Excellent reliability at high T is demonstrated and explained by a physical model.

Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability

CIOCCHINI, NICOLA;LAUDATO, MARIO;LACAITA, ANDREA LEONARDO;IELMINI, DANIELE;
2016

Abstract

Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current operation and excellent high-T reliability. DC and pulsed switching characteristics are explained by ion migration in the chalcogenide layer, as supported by TEM and T-dependent studies. Excellent reliability at high T is demonstrated and explained by a physical model.
European Solid-State Device Research Conference
9781509029693
bipolar switching; embedded memory; ion migration; Joule heating; PCM; Electrical and Electronic Engineering; Safety, Risk, Reliability and Quality
File in questo prodotto:
File Dimensione Formato  
16 ESSDERC Ciocchini.pdf

Accesso riservato

Descrizione: paper
: Publisher’s version
Dimensione 1.38 MB
Formato Adobe PDF
1.38 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/1026962
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact