The physical understanding of the programming and reliability mechanisms in resistive-switching memory devices requires a detailed characterization of the electrical and thermal conduction properties in the low-resistance state of the memory cell. The aim of this paper is the characterization of the conductive filament (CF), which controls the localized current flow in the low resistive state of the cell. Based on a new technique for evaluating the CF temperature during operation, we perform a statistical characterization of the critical filament temperature for the reset operation, i.e., the transition to the high-resistance state by the thermal dissolution of the CF. The thermal resistance of the CF and the activation energy for the dissolution mechanism are then evaluated, allowing for a physics-based numerical modeling of the reset operation based on CF thermal breakup.

Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices

RUSSO, UGO;IELMINI, DANIELE;CAGLI, CARLO;LACAITA, ANDREA LEONARDO
2009

Abstract

The physical understanding of the programming and reliability mechanisms in resistive-switching memory devices requires a detailed characterization of the electrical and thermal conduction properties in the low-resistance state of the memory cell. The aim of this paper is the characterization of the conductive filament (CF), which controls the localized current flow in the low resistive state of the cell. Based on a new technique for evaluating the CF temperature during operation, we perform a statistical characterization of the critical filament temperature for the reset operation, i.e., the transition to the high-resistance state by the thermal dissolution of the CF. The thermal resistance of the CF and the activation energy for the dissolution mechanism are then evaluated, allowing for a physics-based numerical modeling of the reset operation based on CF thermal breakup.
sezele
File in questo prodotto:
File Dimensione Formato  
Russo Lacaita 2009.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 636.78 kB
Formato Adobe PDF
636.78 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/515883
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 297
  • ???jsp.display-item.citation.isi??? 279
social impact