This work investigates the performance of the statistical impedance field method in the analysis of the amplitude of random telegraph noise fluctuations in nanoscale MOS devices. Considering different channel doping profiles, we show that this method offers a practical compromise between accuracy and computational loads, allowing a good assessment of the RTN amplitude statistics while resulting in non-negligible errors on the single microscopic samples where atomistic doping strongly contributes to non-uniformities of channel inversion and to percolative source-to-drain conduction

Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices

CASTELLANI, NICCOLO';MONZIO COMPAGNONI, CHRISTIAN;LACAITA, ANDREA LEONARDO;SOTTOCORNOLA SPINELLI, ALESSANDRO;
2013

Abstract

This work investigates the performance of the statistical impedance field method in the analysis of the amplitude of random telegraph noise fluctuations in nanoscale MOS devices. Considering different channel doping profiles, we show that this method offers a practical compromise between accuracy and computational loads, allowing a good assessment of the RTN amplitude statistics while resulting in non-negligible errors on the single microscopic samples where atomistic doping strongly contributes to non-uniformities of channel inversion and to percolative source-to-drain conduction
Proc. SISPAD
9781467357364
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/762239
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