The electronic properties of amorphous chalcogenide materials to be used in a phase change memory (PCM) play a critical role in limiting the read/program speed and voltage of the cell. This work presents a comprehensive experimental analysis of the recovery transient of threshold voltage V(T) after reset. It is shown that V(T) displays a fast increase in the first 30 ns after reset, followed by a slower time evolution due to drift. The recovery behavior is explained in terms of a threshold switching model for amorphous chalcogenides. Finally, the recovery of the OFF-state resistance R is studied, in order to assess the resistance window of the PCM under fast read operation.

Assessment of threshold switching dynamics in phase-change chalcogenide memories

IELMINI, DANIELE;LACAITA, ANDREA LEONARDO;MANTEGAZZA, DAVIDE;PIROVANO, AGOSTINO
2005

Abstract

The electronic properties of amorphous chalcogenide materials to be used in a phase change memory (PCM) play a critical role in limiting the read/program speed and voltage of the cell. This work presents a comprehensive experimental analysis of the recovery transient of threshold voltage V(T) after reset. It is shown that V(T) displays a fast increase in the first 30 ns after reset, followed by a slower time evolution due to drift. The recovery behavior is explained in terms of a threshold switching model for amorphous chalcogenides. Finally, the recovery of the OFF-state resistance R is studied, in order to assess the resistance window of the PCM under fast read operation.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING
9780780392687
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/247289
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