We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects

Defects spectroscopy in SiO2 by statistical random telegraph noise analysis

GUSMEROLI, RICCARDO;MONZIO COMPAGNONI, CHRISTIAN;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO;
2006

Abstract

We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects
Electron Devices Meeting, 2006. IEDM '06. International
9781424404384
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/244646
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