We present a detailed experimental and numerical analysis of drain avalanche hot-hole injection (DAHHI) in Flash memories. By using carrier-separation techniques, we provide new methods to separately estimate hot-hole impact-ionization and injection into the floating-gate (FG). Monte Carlo (MC) calculations are shown, in good agreement with data, and are used to investigate programming conditions which minimize tunnel-oxide degradation.

Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories

IELMINI, DANIELE;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO;
2003

Abstract

We present a detailed experimental and numerical analysis of drain avalanche hot-hole injection (DAHHI) in Flash memories. By using carrier-separation techniques, we provide new methods to separately estimate hot-hole impact-ionization and injection into the floating-gate (FG). Monte Carlo (MC) calculations are shown, in good agreement with data, and are used to investigate programming conditions which minimize tunnel-oxide degradation.
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
0-7803-7872-5
sezele
File in questo prodotto:
File Dimensione Formato  
iedm_flash.pdf

Accesso riservato

: Altro materiale allegato
Dimensione 255.83 kB
Formato Adobe PDF
255.83 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/240408
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 2
social impact