This work presents a statistical analysis of nanocrystal (NC) memory reliability. Characterization of data retention for 256 Kbit arrays after high-field stress provides evidence for an anomalous tail of one-few leaky cells. The statistical impact of the anomalous tail (about 10(-6)-10(-1)) is shown to be largely reduced as compared to conventional Hash arrays with continuous floating gate. The SILC immunity in our samples is discussed based on discrete-storage effects. Finally, we present a new Monte Carlo model for lateral tunneling in the NC network, which quantitatively accounts for the observed anomalous tail in the array.

Statistical analysis of nanocrystal memory reliability

MONZIO COMPAGNONI, CHRISTIAN;IELMINI, DANIELE;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO;
2004-01-01

Abstract

This work presents a statistical analysis of nanocrystal (NC) memory reliability. Characterization of data retention for 256 Kbit arrays after high-field stress provides evidence for an anomalous tail of one-few leaky cells. The statistical impact of the anomalous tail (about 10(-6)-10(-1)) is shown to be largely reduced as compared to conventional Hash arrays with continuous floating gate. The SILC immunity in our samples is discussed based on discrete-storage effects. Finally, we present a new Monte Carlo model for lateral tunneling in the NC network, which quantitatively accounts for the observed anomalous tail in the array.
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS
9780780383159
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/258168
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