Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.

Modeling of Atomic Migration Phenomena in Phase Change Memory Devices

CRESPI, LUCA;LACAITA, ANDREA LEONARDO;
2015-01-01

Abstract

Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.
2015
2015 IEEE 7th International Memory Workshop, IMW 2015
978-1-4673-6931-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/965614
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