RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MONZIO COMPAGNONI, CHRISTIAN
 Distribuzione geografica
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Continente #
NA - Nord America 13.273
EU - Europa 7.100
AS - Asia 5.226
SA - Sud America 868
Continente sconosciuto - Info sul continente non disponibili 358
AF - Africa 207
OC - Oceania 12
Totale 27.044
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Nazione #
US - Stati Uniti d'America 12.955
RU - Federazione Russa 2.569
SG - Singapore 1.834
IT - Italia 1.715
CN - Cina 1.336
VN - Vietnam 731
BR - Brasile 725
FR - Francia 392
KR - Corea 370
AT - Austria 355
DE - Germania 311
GB - Regno Unito 299
UA - Ucraina 260
HK - Hong Kong 231
FI - Finlandia 216
CA - Canada 211
JP - Giappone 192
SE - Svezia 187
NL - Olanda 176
IE - Irlanda 135
MA - Marocco 113
TW - Taiwan 111
ES - Italia 101
CH - Svizzera 100
IN - India 99
BE - Belgio 84
AR - Argentina 52
BD - Bangladesh 50
ID - Indonesia 43
MX - Messico 42
PL - Polonia 41
IQ - Iraq 33
ZA - Sudafrica 30
TR - Turchia 25
CO - Colombia 22
EC - Ecuador 22
UZ - Uzbekistan 22
HU - Ungheria 20
PK - Pakistan 19
CZ - Repubblica Ceca 18
NO - Norvegia 16
CR - Costa Rica 14
RO - Romania 14
BG - Bulgaria 13
JM - Giamaica 13
PH - Filippine 13
TN - Tunisia 13
PT - Portogallo 12
SA - Arabia Saudita 12
AZ - Azerbaigian 11
VE - Venezuela 11
CI - Costa d'Avorio 10
IL - Israele 10
PY - Paraguay 10
BO - Bolivia 9
LT - Lituania 9
AE - Emirati Arabi Uniti 8
AU - Australia 8
DZ - Algeria 8
EE - Estonia 8
KE - Kenya 8
LB - Libano 8
TT - Trinidad e Tobago 8
EG - Egitto 7
GR - Grecia 7
IR - Iran 7
JO - Giordania 7
LV - Lettonia 7
MD - Moldavia 7
DK - Danimarca 6
GT - Guatemala 6
MY - Malesia 6
NI - Nicaragua 6
PA - Panama 6
TH - Thailandia 6
UY - Uruguay 6
CL - Cile 5
LA - Repubblica Popolare Democratica del Laos 5
PE - Perù 5
SK - Slovacchia (Repubblica Slovacca) 5
AL - Albania 4
ET - Etiopia 4
KZ - Kazakistan 4
OM - Oman 4
PS - Palestinian Territory 4
BS - Bahamas 3
CY - Cipro 3
KG - Kirghizistan 3
NP - Nepal 3
NZ - Nuova Zelanda 3
SN - Senegal 3
TJ - Tagikistan 3
AO - Angola 2
BH - Bahrain 2
BJ - Benin 2
DO - Repubblica Dominicana 2
EU - Europa 2
GE - Georgia 2
HN - Honduras 2
HR - Croazia 2
Totale 26.654
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Città #
Ashburn 1.485
Fairfield 1.326
Singapore 1.043
San Jose 1.005
Woodbridge 825
Chandler 659
Houston 612
Seattle 590
Wilmington 525
Ann Arbor 491
Milan 461
Cambridge 459
Council Bluffs 430
Moscow 409
Santa Clara 379
Vienna 348
Beijing 275
Seoul 253
The Dalles 250
Los Angeles 231
Boardman 202
Hong Kong 198
Hefei 195
Ho Chi Minh City 178
Tokyo 171
Jacksonville 170
Dearborn 168
Lauterbourg 148
Lawrence 138
Dublin 133
Medford 128
Hanoi 117
Ottawa 114
Dong Ket 100
North Charleston 100
London 99
New York 96
Buffalo 91
Kent 84
Rome 83
Zurich 82
Helsinki 73
San Diego 72
Taipei 72
Kenitra 69
Des Moines 64
Málaga 64
Dallas 62
Brussels 61
São Paulo 59
Udine 56
Washington 54
Frankfurt am Main 49
Redwood City 42
Chicago 39
Las Vegas 38
Orem 38
Shanghai 37
Casablanca 35
Warsaw 35
Naples 32
Jakarta 31
Stockholm 28
Amsterdam 26
Atlanta 26
Capelle 26
Da Nang 26
Duncan 26
Montreal 26
Wuhan 25
Brooklyn 24
Frisco 24
Turin 24
Guangzhou 23
Pohang 23
Verona 23
Bergamo 22
Haiphong 22
San Francisco 21
Miami 19
Norwalk 19
Nuremberg 19
Phoenix 19
Rio de Janeiro 19
Tashkent 19
Munich 18
Tianjin 18
Bologna 17
Johannesburg 17
Mexico City 17
Curitiba 16
Redmond 16
Belo Horizonte 15
Chennai 15
East Aurora 15
Edinburgh 15
Memphis 15
Princeton 15
Baghdad 14
Denver 14
Totale 16.699
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Nome #
Modeling and simulation approaches for gate current computation 296
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 292
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 256
Memristive and CMOS Devices for Neuromorphic Computing 252
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 250
A Monte Carlo investigation of nanocrystal memory reliability 248
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 242
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 233
Reviewing the evolution of the NAND Flash technology 232
Investigation of the turn-on of T-RAM cells under transient conditions 222
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 219
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 217
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 215
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 214
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 213
RTN effects in scaled Flash memory arrays 211
First detection of single-electron charging of the floating gate of NAND Flash memory cells 209
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 208
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 207
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 207
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 202
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 202
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 201
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 199
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 198
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 198
Random telegraph noise in 3d nand flash memories 198
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 197
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 196
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 195
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 195
A single-electron analysis of NAND Flash memory programming 194
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 194
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 193
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 192
Working principles of a DRAM cell based on gated-thyristor bistability 190
Reliability constraints for TANOS memories due to alumina trapping and leakage 189
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 189
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 188
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 187
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 186
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 185
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 184
Modeling of dynamic operation of T-RAM cells 184
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 184
A new physics-based model for TANOS memories program/erase 183
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 183
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 182
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 180
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 180
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 177
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 176
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 174
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 174
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 173
Impact of cell shape on random telegraph noise in decananometer Flash memories 172
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 172
Seizure detection via reservoir computing in MoS2-based charge trap memory devices 170
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 170
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 170
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 169
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 168
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 166
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 165
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 165
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 164
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 164
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 163
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 162
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 162
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 161
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 160
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 160
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 160
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 159
Statistical analysis of nanocrystal memory reliability 159
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 159
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 159
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 158
String current in decananometer NAND Flash arrays: a compact-modeling investigation 158
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 158
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 157
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 156
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 155
Data regeneration and disturb immunity of T-RAM cells 155
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 155
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 155
Investigation of the random telegraph noise instability in scaled Flash memory arrays 154
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 154
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays 154
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 153
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 152
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories 151
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions 149
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 149
Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention 148
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 148
Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories 147
First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime 147
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 147
Totale 18.384
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Categoria #
all - tutte 81.118
article - articoli 49.084
book - libri 0
conference - conferenze 28.950
curatela - curatele 0
other - altro 0
patent - brevetti 605
selected - selezionate 0
volume - volumi 2.479
Totale 162.236
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.380 0 214 148 93 111 72 110 84 101 66 154 227
2022/20231.709 158 69 51 158 222 291 21 164 270 98 179 28
2023/20241.013 58 169 56 104 46 106 67 50 24 166 24 143
2024/20253.171 19 36 83 158 429 285 119 323 616 202 446 455
2025/202611.468 2.056 1.925 486 816 563 606 1.795 611 541 1.027 265 777
2026/2027536 262 274 0 0 0 0 0 0 0 0 0 0
Totale 27.044