RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MONZIO COMPAGNONI, CHRISTIAN
 Distribuzione geografica
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Continente #
NA - Nord America 8.082
EU - Europa 2.761
AS - Asia 849
SA - Sud America 13
AF - Africa 8
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 11.716
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Nazione #
US - Stati Uniti d'America 7.950
IT - Italia 954
AT - Austria 334
UA - Ucraina 247
SG - Singapore 203
CN - Cina 201
VN - Vietnam 194
DE - Germania 186
FI - Finlandia 178
SE - Svezia 165
GB - Regno Unito 164
CA - Canada 127
IE - Irlanda 125
KR - Corea 112
ES - Italia 73
CH - Svizzera 70
BE - Belgio 65
FR - Francia 62
TW - Taiwan 57
NL - Olanda 41
IN - India 30
HU - Ungheria 19
JP - Giappone 16
NO - Norvegia 12
RU - Federazione Russa 12
BR - Brasile 10
RO - Romania 10
HK - Hong Kong 7
PT - Portogallo 7
BG - Bulgaria 6
EE - Estonia 5
IL - Israele 5
IR - Iran 5
MD - Moldavia 5
CI - Costa d'Avorio 4
DK - Danimarca 4
CZ - Repubblica Ceca 3
LT - Lituania 3
MX - Messico 3
PK - Pakistan 3
SA - Arabia Saudita 3
BJ - Benin 2
CR - Costa Rica 2
CY - Cipro 2
EU - Europa 2
GR - Grecia 2
ID - Indonesia 2
JO - Giordania 2
LU - Lussemburgo 2
LV - Lettonia 2
MY - Malesia 2
PL - Polonia 2
AL - Albania 1
AR - Argentina 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CL - Cile 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
MC - Monaco 1
MU - Mauritius 1
NZ - Nuova Zelanda 1
RS - Serbia 1
TR - Turchia 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 11.716
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Città #
Fairfield 1.325
Woodbridge 825
Chandler 659
Houston 593
Ashburn 585
Seattle 585
Wilmington 524
Ann Arbor 491
Cambridge 459
Vienna 334
Milan 194
Dearborn 168
Jacksonville 168
Lawrence 138
Medford 127
Singapore 126
Dublin 124
Ottawa 112
Dong Ket 100
Beijing 94
San Diego 72
Málaga 63
Des Moines 62
Brussels 59
Zurich 55
Helsinki 53
Washington 45
Redwood City 42
Taipei 33
New York 28
Capelle 26
Duncan 26
London 24
Seoul 24
Pohang 22
Bergamo 21
Norwalk 19
Shanghai 18
Redmond 16
Rome 16
Boardman 15
Edinburgh 15
Princeton 15
Wuhan 14
Ferrara 13
Mapello 13
Udine 13
Budapest 12
Los Angeles 12
Verona 12
Falkenstein 11
Miami 11
Monza 10
Sandvika 10
Auburn Hills 9
Calcinate 9
Frankfurt am Main 9
Hefei 9
Lappeenranta 9
Seriate 9
Dresden 8
Mountain View 8
San Giorgio di Nogaro 8
Stezzano 8
Stockholm 8
Acton 7
Dallas 7
Indiana 7
Turin 7
Bresso 6
Madrid 6
Nanjing 6
Sofia 6
Tainan City 6
Tokyo 6
Aachen 5
Amsterdam 5
Chicago 5
Chisinau 5
Falls Church 5
Fremont 5
Gangbuk-gu 5
Guangzhou 5
Hebei 5
Jinan 5
Kochi 5
Nanchang 5
Portland 5
Sassari 5
St Louis 5
Tallinn 5
Tel Aviv 5
Abidjan 4
Atlanta 4
Boise 4
Bucharest 4
Columbus 4
Hallau 4
Herent 4
Kumar 4
Totale 8.906
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Nome #
Modeling and simulation approaches for gate current computation 200
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 191
Reviewing the evolution of the NAND Flash technology 163
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 153
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 142
A Monte Carlo investigation of nanocrystal memory reliability 137
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 128
RTN effects in scaled Flash memory arrays 126
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 123
First detection of single-electron charging of the floating gate of NAND Flash memory cells 122
Memristive and CMOS Devices for Neuromorphic Computing 119
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 117
Random telegraph noise in 3d nand flash memories 116
Investigation of the turn-on of T-RAM cells under transient conditions 114
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 113
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 112
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 111
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 110
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 108
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 108
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 108
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 105
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 104
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 103
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 102
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 100
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 100
Impact of cell shape on random telegraph noise in decananometer Flash memories 99
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 99
Characterization of transient currents in HfO2 capacitors in the short timescale 98
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 98
Statistical analysis of nanocrystal memory reliability 98
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 98
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 96
Modeling of dynamic operation of T-RAM cells 96
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 96
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 95
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 94
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 94
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 94
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 94
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 93
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 93
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 91
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 91
Working principles of a DRAM cell based on gated-thyristor bistability 90
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 89
Temperature dependence of transient and steady-state gate currents in HfO2 capacitors 89
Reliability constraints for TANOS memories due to alumina trapping and leakage 89
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 89
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 88
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 87
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 87
A single-electron analysis of NAND Flash memory programming 87
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 86
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 85
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 85
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 85
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 85
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories 84
Investigation of the random telegraph noise instability in scaled Flash memory arrays 83
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 83
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 83
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 83
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 83
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 83
Compact modeling of variability effects in nanoscale NAND Flash memories 83
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories 81
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 80
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 80
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 80
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 79
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 79
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 78
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 78
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 78
Comments on "A general and transformable model platform for emerging multi-gate MOSFETs" 78
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 77
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 76
Reliability of NAND Flash Arrays: A Review of What the 2-D–to–3-D Transition Meant 76
Experimental study of data retention in nitride memories by temperature and field acceleration 76
Statistical model for random telegraph noise in Flash memories 76
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 76
Reliability assessment of discrete-trap memories for NOR applications 75
Reliability investigation of T-RAM cells for DRAM applications 74
Cycling effect on the random telegraph noise instabilities of NOR and NAND Flash arrays 73
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 73
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 73
High-Density Solid-State Storage: A Long Path to Success 73
Statistical constraints in nanocrystal memory scaling 72
Variability effects on the VT distribution of nanoscale NAND Flash memories 72
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 72
Edge and percolation effects on VT window in nanocrystal memories 72
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 72
Modeling of tunneling P/E for nanocrystal memories 72
Impact of nonuniform doping on random telegraph noise in Flash memory device 71
String current in decananometer NAND Flash arrays: a compact-modeling investigation 71
A new physics-based model for TANOS memories program/erase 70
Study of nanocrystal memory reliability by CAST structures 70
Data regeneration and disturb immunity of T-RAM cells 70
Totale 9.411
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Categoria #
all - tutte 41.835
article - articoli 25.414
book - libri 0
conference - conferenze 14.831
curatela - curatele 0
other - altro 0
patent - brevetti 283
selected - selezionate 0
volume - volumi 1.307
Totale 83.670
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.527 0 0 0 213 414 364 362 267 356 198 230 123
2020/20211.778 182 96 169 135 138 94 90 138 147 201 142 246
2021/20221.465 85 214 148 93 111 72 110 84 101 66 154 227
2022/20231.709 158 69 51 158 222 291 21 164 270 98 179 28
2023/20241.013 58 169 56 104 46 106 67 50 24 166 24 143
2024/2025168 19 36 83 30 0 0 0 0 0 0 0 0
Totale 12.037