MONZIO COMPAGNONI, CHRISTIAN
 Distribuzione geografica
Continente #
NA - Nord America 8.929
EU - Europa 3.076
AS - Asia 1.555
SA - Sud America 276
AF - Africa 20
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 13.860
Nazione #
US - Stati Uniti d'America 8.781
IT - Italia 1.011
SG - Singapore 694
AT - Austria 348
CN - Cina 317
UA - Ucraina 252
BR - Brasile 246
DE - Germania 227
VN - Vietnam 196
FI - Finlandia 191
SE - Svezia 167
GB - Regno Unito 164
FR - Francia 162
IE - Irlanda 128
CA - Canada 127
KR - Corea 113
CH - Svizzera 87
ES - Italia 76
BE - Belgio 68
TW - Taiwan 57
NL - Olanda 52
IN - India 34
ID - Indonesia 27
RU - Federazione Russa 20
HU - Ungheria 19
JP - Giappone 17
HK - Hong Kong 16
NO - Norvegia 15
CZ - Repubblica Ceca 12
RO - Romania 11
BG - Bulgaria 10
IQ - Iraq 9
PT - Portogallo 9
UZ - Uzbekistan 8
AR - Argentina 7
AZ - Azerbaigian 7
EE - Estonia 7
IL - Israele 7
MX - Messico 7
PK - Pakistan 7
TR - Turchia 7
LT - Lituania 6
LV - Lettonia 6
MD - Moldavia 6
BO - Bolivia 5
CR - Costa Rica 5
DK - Danimarca 5
IR - Iran 5
SA - Arabia Saudita 5
VE - Venezuela 5
CI - Costa d'Avorio 4
EC - Ecuador 4
GR - Grecia 4
LA - Repubblica Popolare Democratica del Laos 4
MA - Marocco 4
PA - Panama 4
BD - Bangladesh 3
CY - Cipro 3
JM - Giamaica 3
OM - Oman 3
PE - Perù 3
PH - Filippine 3
ZA - Sudafrica 3
AL - Albania 2
BJ - Benin 2
CO - Colombia 2
EG - Egitto 2
EU - Europa 2
IS - Islanda 2
JO - Giordania 2
KG - Kirghizistan 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MY - Malesia 2
PL - Polonia 2
SK - Slovacchia (Repubblica Slovacca) 2
TJ - Tagikistan 2
TN - Tunisia 2
UY - Uruguay 2
AM - Armenia 1
AU - Australia 1
BN - Brunei Darussalam 1
CL - Cile 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
HR - Croazia 1
KE - Kenya 1
MC - Monaco 1
MU - Mauritius 1
NI - Nicaragua 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PY - Paraguay 1
RS - Serbia 1
Totale 13.860
Città #
Fairfield 1.325
Woodbridge 825
Chandler 659
Houston 593
Ashburn 589
Seattle 585
Wilmington 524
Ann Arbor 491
Cambridge 459
Singapore 399
Santa Clara 345
Vienna 343
Milan 225
Boardman 176
Dearborn 168
Jacksonville 168
Council Bluffs 151
Lawrence 138
Dublin 127
Medford 127
Ottawa 112
Dong Ket 100
Beijing 94
San Diego 72
Zurich 69
Helsinki 65
Málaga 63
Des Moines 62
Brussels 61
Washington 45
Los Angeles 44
Redwood City 42
Taipei 33
New York 28
Capelle 26
Duncan 26
Jakarta 26
Frankfurt am Main 24
London 24
Seoul 24
Udine 23
Pohang 22
Bergamo 21
Norwalk 19
Shanghai 19
Wuhan 17
Redmond 16
Rome 16
Edinburgh 15
Princeton 15
Nuremberg 14
Ferrara 13
Mapello 13
São Paulo 13
Budapest 12
Verona 12
Falkenstein 11
Miami 11
Lappeenranta 10
Monza 10
Sandvika 10
Sofia 10
Amsterdam 9
Auburn Hills 9
Calcinate 9
Hefei 9
Seriate 9
Stockholm 9
Dresden 8
Hong Kong 8
Mountain View 8
San Giorgio di Nogaro 8
Stezzano 8
Acton 7
Baku 7
Belo Horizonte 7
Dallas 7
Indiana 7
Madrid 7
Tallinn 7
Tashkent 7
Tokyo 7
Turin 7
Bresso 6
Chisinau 6
Nanjing 6
Prague 6
Riga 6
Salvador 6
Tainan City 6
Tel Aviv 6
Aachen 5
Atlanta 5
Baghdad 5
Campinas 5
Chicago 5
Falls Church 5
Fremont 5
Gangbuk-gu 5
Guangzhou 5
Totale 10.036
Nome #
Modeling and simulation approaches for gate current computation 221
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 198
Reviewing the evolution of the NAND Flash technology 180
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 174
A Monte Carlo investigation of nanocrystal memory reliability 158
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 154
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 145
RTN effects in scaled Flash memory arrays 137
Memristive and CMOS Devices for Neuromorphic Computing 136
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 135
First detection of single-electron charging of the floating gate of NAND Flash memory cells 135
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 131
Random telegraph noise in 3d nand flash memories 131
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 130
Investigation of the turn-on of T-RAM cells under transient conditions 129
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 125
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 120
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 119
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 119
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 119
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 119
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 119
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 118
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 118
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 117
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 115
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 114
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 113
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 113
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 112
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 112
Impact of cell shape on random telegraph noise in decananometer Flash memories 111
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 109
Statistical analysis of nanocrystal memory reliability 109
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 109
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 108
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 108
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 107
Modeling of dynamic operation of T-RAM cells 107
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 106
Characterization of transient currents in HfO2 capacitors in the short timescale 104
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 104
Working principles of a DRAM cell based on gated-thyristor bistability 104
Reliability constraints for TANOS memories due to alumina trapping and leakage 103
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 103
A single-electron analysis of NAND Flash memory programming 103
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 103
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 102
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 102
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 101
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 100
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 100
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 100
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 99
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 99
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 98
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 97
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 97
Temperature dependence of transient and steady-state gate currents in HfO2 capacitors 96
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 96
Investigation of the random telegraph noise instability in scaled Flash memory arrays 95
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 95
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 94
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 94
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 94
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 93
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 93
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories 92
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 92
Compact modeling of variability effects in nanoscale NAND Flash memories 92
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 91
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 91
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 91
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 89
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 89
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 88
Comments on "A general and transformable model platform for emerging multi-gate MOSFETs" 88
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells 88
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories 87
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 87
Reliability investigation of T-RAM cells for DRAM applications 87
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 87
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 87
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 86
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 86
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 86
Impact of nonuniform doping on random telegraph noise in Flash memory device 85
Reliability of NAND Flash Arrays: A Review of What the 2-D–to–3-D Transition Meant 85
High-Density Solid-State Storage: A Long Path to Success 85
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 84
Experimental study of data retention in nitride memories by temperature and field acceleration 84
A new physics-based model for TANOS memories program/erase 83
String current in decananometer NAND Flash arrays: a compact-modeling investigation 83
Edge and percolation effects on VT window in nanocrystal memories 83
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 82
Time Dependent Threshold-Voltage Fluctuations in NAND Flash Memories: From Basic Physics to Impact on Array Operation 82
Data regeneration and disturb immunity of T-RAM cells 82
Reliability assessment of discrete-trap memories for NOR applications 82
Statistical model for random telegraph noise in Flash memories 82
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 81
Totale 10.656
Categoria #
all - tutte 50.445
article - articoli 30.712
book - libri 0
conference - conferenze 17.779
curatela - curatele 0
other - altro 0
patent - brevetti 366
selected - selezionate 0
volume - volumi 1.588
Totale 100.890


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020353 0 0 0 0 0 0 0 0 0 0 230 123
2020/20211.778 182 96 169 135 138 94 90 138 147 201 142 246
2021/20221.465 85 214 148 93 111 72 110 84 101 66 154 227
2022/20231.709 158 69 51 158 222 291 21 164 270 98 179 28
2023/20241.013 58 169 56 104 46 106 67 50 24 166 24 143
2024/20252.323 19 36 83 158 429 285 119 323 616 202 53 0
Totale 14.192