RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MONZIO COMPAGNONI, CHRISTIAN
 Distribuzione geografica
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Continente #
NA - Nord America 10.573
EU - Europa 6.181
AS - Asia 3.668
SA - Sud America 806
AF - Africa 184
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 2
Totale 21.421
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Nazione #
US - Stati Uniti d'America 10.352
RU - Federazione Russa 2.568
SG - Singapore 1.582
IT - Italia 1.116
CN - Cina 1.113
BR - Brasile 684
AT - Austria 353
VN - Vietnam 339
DE - Germania 287
GB - Regno Unito 275
UA - Ucraina 256
FI - Finlandia 208
FR - Francia 204
SE - Svezia 186
NL - Olanda 161
CA - Canada 157
KR - Corea 151
IE - Irlanda 131
MA - Marocco 111
CH - Svizzera 95
ES - Italia 91
BE - Belgio 83
IN - India 77
TW - Taiwan 72
AR - Argentina 47
JP - Giappone 46
ID - Indonesia 42
HK - Hong Kong 36
MX - Messico 35
BD - Bangladesh 32
IQ - Iraq 27
PL - Polonia 27
ZA - Sudafrica 26
TR - Turchia 23
HU - Ungheria 20
CO - Colombia 19
EC - Ecuador 19
CZ - Repubblica Ceca 17
UZ - Uzbekistan 17
NO - Norvegia 15
PK - Pakistan 13
BG - Bulgaria 12
RO - Romania 12
SA - Arabia Saudita 11
CI - Costa d'Avorio 10
IL - Israele 10
TN - Tunisia 10
VE - Venezuela 10
AZ - Azerbaigian 9
PT - Portogallo 9
LT - Lituania 8
PY - Paraguay 8
AE - Emirati Arabi Uniti 7
BO - Bolivia 7
CR - Costa Rica 7
EE - Estonia 7
IR - Iran 7
DK - Danimarca 6
DZ - Algeria 6
JO - Giordania 6
LV - Lettonia 6
MD - Moldavia 6
PA - Panama 6
GR - Grecia 5
KE - Kenya 5
LA - Repubblica Popolare Democratica del Laos 5
LB - Libano 5
PE - Perù 5
EG - Egitto 4
GT - Guatemala 4
JM - Giamaica 4
KZ - Kazakistan 4
OM - Oman 4
PH - Filippine 4
UY - Uruguay 4
AL - Albania 3
AU - Australia 3
CL - Cile 3
CY - Cipro 3
ET - Etiopia 3
NZ - Nuova Zelanda 3
SK - Slovacchia (Repubblica Slovacca) 3
TJ - Tagikistan 3
BH - Bahrain 2
BJ - Benin 2
DO - Repubblica Dominicana 2
EU - Europa 2
HR - Croazia 2
IS - Islanda 2
KG - Kirghizistan 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MG - Madagascar 2
MY - Malesia 2
NI - Nicaragua 2
NP - Nepal 2
PS - Palestinian Territory 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
Totale 21.403
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Città #
Fairfield 1.325
Ashburn 1.185
Singapore 887
Woodbridge 825
Chandler 659
Houston 603
Seattle 587
Wilmington 525
Ann Arbor 491
Cambridge 459
Moscow 409
Santa Clara 356
Vienna 346
Beijing 264
Milan 258
Hefei 193
Boardman 177
Jacksonville 169
Dearborn 168
Council Bluffs 158
Los Angeles 156
Lawrence 138
Dublin 130
Medford 128
Ottawa 113
Dong Ket 100
London 94
San Jose 94
Kent 84
Buffalo 80
New York 79
Zurich 77
San Diego 72
Kenitra 69
Helsinki 65
Des Moines 63
Málaga 63
Brussels 61
Seoul 59
São Paulo 51
Udine 49
Ho Chi Minh City 48
Washington 48
Dallas 45
Redwood City 42
Taipei 42
Casablanca 35
Frankfurt am Main 34
Tokyo 33
Chicago 32
Jakarta 31
Shanghai 31
Hanoi 29
Stockholm 27
Capelle 26
Duncan 26
Hong Kong 25
Warsaw 23
Pohang 22
Wuhan 22
Bergamo 21
Norwalk 19
Brooklyn 18
Montreal 18
Orem 18
Rome 18
The Dalles 18
Atlanta 17
Nuremberg 17
Rio de Janeiro 17
Curitiba 16
Redmond 16
Verona 16
Amsterdam 15
Belo Horizonte 15
East Aurora 15
Edinburgh 15
Johannesburg 15
Princeton 15
Guangzhou 14
Munich 14
Tashkent 14
Turku 14
Budapest 13
Ferrara 13
Lappeenranta 13
Mapello 13
Mexico City 13
Miami 13
Boston 12
Phoenix 12
Redondo Beach 12
San Francisco 12
Tianjin 12
Baghdad 11
Campinas 11
Falkenstein 11
Leuven 11
Haiphong 10
Monza 10
Totale 13.067
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Nome #
Modeling and simulation approaches for gate current computation 256
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 251
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 226
A Monte Carlo investigation of nanocrystal memory reliability 218
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 214
Reviewing the evolution of the NAND Flash technology 211
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 210
Memristive and CMOS Devices for Neuromorphic Computing 204
RTN effects in scaled Flash memory arrays 190
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 189
Investigation of the turn-on of T-RAM cells under transient conditions 185
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 184
First detection of single-electron charging of the floating gate of NAND Flash memory cells 183
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 180
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 177
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 175
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 171
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 171
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 169
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 168
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 168
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 168
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 167
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 167
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 167
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 166
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 166
Random telegraph noise in 3d nand flash memories 166
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 165
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 164
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 163
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 162
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 161
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 161
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 160
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 159
Reliability constraints for TANOS memories due to alumina trapping and leakage 158
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 158
Modeling of dynamic operation of T-RAM cells 158
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 157
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 156
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 155
A single-electron analysis of NAND Flash memory programming 153
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 151
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 150
Working principles of a DRAM cell based on gated-thyristor bistability 150
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 149
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 147
Impact of cell shape on random telegraph noise in decananometer Flash memories 147
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 147
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 145
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 145
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 144
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 143
A new physics-based model for TANOS memories program/erase 141
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 141
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 140
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 140
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 139
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 138
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 138
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 138
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 138
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 137
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 136
Investigation of the random telegraph noise instability in scaled Flash memory arrays 133
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 133
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 133
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 132
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 132
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 131
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 131
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 130
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 130
Statistical analysis of nanocrystal memory reliability 130
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 129
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 129
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 129
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 128
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 128
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells 127
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 126
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories 126
Data regeneration and disturb immunity of T-RAM cells 126
Comments on "A general and transformable model platform for emerging multi-gate MOSFETs" 125
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 125
Characterization of transient currents in HfO2 capacitors in the short timescale 124
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 124
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 124
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions 123
Temperature dependence of transient and steady-state gate currents in HfO2 capacitors 122
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 122
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories 121
Reliability investigation of T-RAM cells for DRAM applications 121
String current in decananometer NAND Flash arrays: a compact-modeling investigation 121
Edge and percolation effects on VT window in nanocrystal memories 121
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 120
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 120
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 120
Time Dependent Threshold-Voltage Fluctuations in NAND Flash Memories: From Basic Physics to Impact on Array Operation 118
Totale 15.215
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Categoria #
all - tutte 67.916
article - articoli 41.097
book - libri 0
conference - conferenze 24.254
curatela - curatele 0
other - altro 0
patent - brevetti 483
selected - selezionate 0
volume - volumi 2.082
Totale 135.832
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021964 0 0 0 0 0 0 90 138 147 201 142 246
2021/20221.465 85 214 148 93 111 72 110 84 101 66 154 227
2022/20231.709 158 69 51 158 222 291 21 164 270 98 179 28
2023/20241.013 58 169 56 104 46 106 67 50 24 166 24 143
2024/20253.171 19 36 83 158 429 285 119 323 616 202 446 455
2025/20266.731 2.056 1.925 486 816 563 606 279 0 0 0 0 0
Totale 21.771