RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MONZIO COMPAGNONI, CHRISTIAN
 Distribuzione geografica
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Continente #
NA - Nord America 8.052
EU - Europa 2.573
AS - Asia 625
SA - Sud America 12
AF - Africa 6
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 11.271
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Nazione #
US - Stati Uniti d'America 7.927
IT - Italia 812
AT - Austria 334
UA - Ucraina 247
CN - Cina 198
VN - Vietnam 194
DE - Germania 176
FI - Finlandia 171
SE - Svezia 165
GB - Regno Unito 162
IE - Irlanda 125
CA - Canada 121
KR - Corea 101
ES - Italia 72
BE - Belgio 64
FR - Francia 62
CH - Svizzera 52
TW - Taiwan 51
NL - Olanda 40
IN - India 28
HU - Ungheria 19
JP - Giappone 16
NO - Norvegia 11
RU - Federazione Russa 11
BR - Brasile 10
RO - Romania 10
HK - Hong Kong 7
PT - Portogallo 7
BG - Bulgaria 6
SG - Singapore 6
EE - Estonia 5
IR - Iran 5
MD - Moldavia 5
CI - Costa d'Avorio 4
DK - Danimarca 4
IL - Israele 4
CZ - Repubblica Ceca 3
PK - Pakistan 3
CR - Costa Rica 2
CY - Cipro 2
EU - Europa 2
GR - Grecia 2
ID - Indonesia 2
JO - Giordania 2
LU - Lussemburgo 2
MX - Messico 2
MY - Malesia 2
PL - Polonia 2
SA - Arabia Saudita 2
AL - Albania 1
BN - Brunei Darussalam 1
CL - Cile 1
LV - Lettonia 1
MC - Monaco 1
MU - Mauritius 1
NZ - Nuova Zelanda 1
RS - Serbia 1
TR - Turchia 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 11.271
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Città #
Fairfield 1.325
Woodbridge 825
Chandler 659
Houston 593
Seattle 585
Ashburn 581
Wilmington 524
Ann Arbor 491
Cambridge 459
Vienna 334
Milan 185
Dearborn 168
Jacksonville 168
Lawrence 138
Medford 127
Dublin 124
Ottawa 108
Dong Ket 100
Beijing 94
San Diego 72
Málaga 63
Des Moines 62
Brussels 58
Helsinki 52
Washington 45
Redwood City 42
Zurich 38
Taipei 31
Capelle 26
Duncan 26
New York 25
London 24
Seoul 24
Pohang 22
Bergamo 21
Norwalk 19
Shanghai 17
Redmond 16
Rome 16
Boardman 15
Edinburgh 15
Princeton 15
Wuhan 14
Ferrara 13
Mapello 13
Budapest 12
Verona 12
Miami 11
Los Angeles 10
Sandvika 10
Auburn Hills 9
Calcinate 9
Hefei 9
Seriate 9
Dresden 8
Frankfurt am Main 8
Monza 8
Mountain View 8
Stezzano 8
Stockholm 8
Acton 7
Dallas 7
Indiana 7
Turin 7
Udine 7
Bresso 6
Madrid 6
Nanjing 6
Sofia 6
Tokyo 6
Aachen 5
Chicago 5
Chisinau 5
Falls Church 5
Fremont 5
Guangzhou 5
Hebei 5
Jinan 5
Kochi 5
Nanchang 5
Portland 5
Sassari 5
St Louis 5
Tainan City 5
Tallinn 5
Abidjan 4
Amsterdam 4
Atlanta 4
Boise 4
Bucharest 4
Columbus 4
Hallau 4
Herent 4
Kumar 4
Palma Campania 4
Saronno 4
Singapore 4
Tel Aviv 4
Vancouver 4
Verdello 4
Totale 8.711
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Nome #
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 190
Modeling and simulation approaches for gate current computation 183
Reviewing the evolution of the NAND Flash technology 152
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 151
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 138
A Monte Carlo investigation of nanocrystal memory reliability 133
RTN effects in scaled Flash memory arrays 122
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 122
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 120
First detection of single-electron charging of the floating gate of NAND Flash memory cells 120
Memristive and CMOS Devices for Neuromorphic Computing 116
Random telegraph noise in 3d nand flash memories 113
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 112
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 112
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 111
Investigation of the turn-on of T-RAM cells under transient conditions 110
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 108
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 108
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 106
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 105
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 105
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 103
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 101
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 100
Impact of cell shape on random telegraph noise in decananometer Flash memories 98
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 98
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 97
Statistical analysis of nanocrystal memory reliability 97
Characterization of transient currents in HfO2 capacitors in the short timescale 96
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 95
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 94
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 94
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 94
Modeling of dynamic operation of T-RAM cells 93
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 93
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 93
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 92
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 92
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 91
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 91
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 91
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 91
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 90
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 89
Working principles of a DRAM cell based on gated-thyristor bistability 88
Temperature dependence of transient and steady-state gate currents in HfO2 capacitors 87
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 87
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 87
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 85
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 85
Reliability constraints for TANOS memories due to alumina trapping and leakage 84
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 84
A single-electron analysis of NAND Flash memory programming 84
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 84
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 84
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 83
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 83
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories 82
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 82
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 81
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 81
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 81
Investigation of the random telegraph noise instability in scaled Flash memory arrays 80
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 80
Compact modeling of variability effects in nanoscale NAND Flash memories 80
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 79
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 79
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories 78
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 78
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 78
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 77
Comments on "A general and transformable model platform for emerging multi-gate MOSFETs" 77
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 76
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 76
Reliability of NAND Flash Arrays: A Review of What the 2-D–to–3-D Transition Meant 76
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 75
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 75
Statistical model for random telegraph noise in Flash memories 75
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 74
Reliability assessment of discrete-trap memories for NOR applications 74
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 74
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 73
Cycling effect on the random telegraph noise instabilities of NOR and NAND Flash arrays 73
Reliability investigation of T-RAM cells for DRAM applications 72
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 71
Variability effects on the VT distribution of nanoscale NAND Flash memories 71
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 71
Edge and percolation effects on VT window in nanocrystal memories 71
Modeling of tunneling P/E for nanocrystal memories 71
Statistical constraints in nanocrystal memory scaling 70
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 70
String current in decananometer NAND Flash arrays: a compact-modeling investigation 70
Study of nanocrystal memory reliability by CAST structures 69
Impact of nonuniform doping on random telegraph noise in Flash memory device 69
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells 69
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 68
Threshold-voltage statistics and conduction regimes in nanocrystal memories 67
Experimental study of data retention in nitride memories by temperature and field acceleration 67
Evidence for an atomistic-doping induced variability of the band-to-band leakage current of nanoscale device junctions 67
A new physics-based model for TANOS memories program/erase 66
Totale 9.108
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Categoria #
all - tutte 35.657
article - articoli 21.865
book - libri 0
conference - conferenze 12.533
curatela - curatele 0
other - altro 0
patent - brevetti 231
selected - selezionate 0
volume - volumi 1.028
Totale 71.314
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.142 0 0 0 0 0 0 0 0 0 248 464 430
2019/20202.922 187 160 48 213 414 364 362 267 356 198 230 123
2020/20211.778 182 96 169 135 138 94 90 138 147 201 142 246
2021/20221.465 85 214 148 93 111 72 110 84 101 66 154 227
2022/20231.709 158 69 51 158 222 291 21 164 270 98 179 28
2023/2024732 58 169 56 104 46 106 67 50 24 52 0 0
Totale 11.588