RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

MONZIO COMPAGNONI, CHRISTIAN
 Distribuzione geografica
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Continente #
NA - Nord America 12.336
EU - Europa 6.506
AS - Asia 5.138
SA - Sud America 849
AF - Africa 207
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 2
Totale 25.050
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Nazione #
US - Stati Uniti d'America 12.084
RU - Federazione Russa 2.569
SG - Singapore 1.830
CN - Cina 1.327
IT - Italia 1.145
BR - Brasile 716
VN - Vietnam 690
FR - Francia 390
KR - Corea 361
AT - Austria 355
DE - Germania 309
GB - Regno Unito 297
UA - Ucraina 258
HK - Hong Kong 226
FI - Finlandia 216
JP - Giappone 192
SE - Svezia 187
NL - Olanda 174
CA - Canada 173
IE - Irlanda 134
MA - Marocco 113
TW - Taiwan 106
CH - Svizzera 100
ES - Italia 98
IN - India 98
BE - Belgio 83
AR - Argentina 47
ID - Indonesia 43
MX - Messico 42
BD - Bangladesh 37
PL - Polonia 37
IQ - Iraq 33
ZA - Sudafrica 30
TR - Turchia 25
EC - Ecuador 22
UZ - Uzbekistan 22
CO - Colombia 20
HU - Ungheria 20
PK - Pakistan 19
CZ - Repubblica Ceca 18
NO - Norvegia 15
RO - Romania 14
PH - Filippine 13
TN - Tunisia 13
BG - Bulgaria 12
SA - Arabia Saudita 12
AZ - Azerbaigian 11
PT - Portogallo 11
VE - Venezuela 11
CI - Costa d'Avorio 10
CR - Costa Rica 10
IL - Israele 10
PY - Paraguay 10
BO - Bolivia 9
LT - Lituania 9
AE - Emirati Arabi Uniti 8
AU - Australia 8
DZ - Algeria 8
EE - Estonia 8
KE - Kenya 8
LB - Libano 8
EG - Egitto 7
GR - Grecia 7
IR - Iran 7
JO - Giordania 7
LV - Lettonia 7
DK - Danimarca 6
MD - Moldavia 6
PA - Panama 6
TH - Thailandia 6
UY - Uruguay 6
LA - Repubblica Popolare Democratica del Laos 5
MY - Malesia 5
NI - Nicaragua 5
PE - Perù 5
AL - Albania 4
ET - Etiopia 4
GT - Guatemala 4
JM - Giamaica 4
KZ - Kazakistan 4
OM - Oman 4
PS - Palestinian Territory 4
SK - Slovacchia (Repubblica Slovacca) 4
CL - Cile 3
CY - Cipro 3
KG - Kirghizistan 3
NP - Nepal 3
NZ - Nuova Zelanda 3
SN - Senegal 3
TJ - Tagikistan 3
TT - Trinidad e Tobago 3
AO - Angola 2
BH - Bahrain 2
BJ - Benin 2
DO - Repubblica Dominicana 2
EU - Europa 2
GE - Georgia 2
HR - Croazia 2
IS - Islanda 2
LK - Sri Lanka 2
Totale 25.023
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Città #
Ashburn 1.399
Fairfield 1.325
Singapore 1.040
San Jose 902
Woodbridge 825
Chandler 659
Houston 605
Seattle 587
Wilmington 525
Ann Arbor 491
Cambridge 459
Moscow 409
Santa Clara 366
Vienna 348
Beijing 271
Milan 269
Seoul 252
The Dalles 248
Council Bluffs 245
Los Angeles 221
Hefei 195
Hong Kong 194
Boardman 178
Tokyo 171
Jacksonville 169
Dearborn 168
Ho Chi Minh City 160
Lauterbourg 148
Lawrence 138
Dublin 133
Medford 128
Ottawa 113
Hanoi 106
Dong Ket 100
London 99
North Charleston 98
Buffalo 89
New York 87
Kent 84
Zurich 82
Helsinki 73
San Diego 72
Taipei 71
Kenitra 69
Málaga 64
Des Moines 63
Brussels 61
São Paulo 59
Dallas 54
Frankfurt am Main 49
Udine 49
Washington 49
Redwood City 42
Las Vegas 37
Shanghai 37
Casablanca 35
Chicago 34
Orem 34
Warsaw 32
Jakarta 31
Stockholm 28
Capelle 26
Duncan 26
Amsterdam 25
Wuhan 25
Da Nang 24
Guangzhou 23
Montreal 23
Haiphong 22
Pohang 22
Atlanta 21
Bergamo 21
Rome 20
Norwalk 19
Nuremberg 19
Rio de Janeiro 19
Tashkent 19
Brooklyn 18
Tianjin 18
Johannesburg 17
Mexico City 17
Munich 17
Curitiba 16
Redmond 16
Verona 16
Belo Horizonte 15
Chennai 15
East Aurora 15
Edinburgh 15
Princeton 15
Baghdad 14
Miami 14
Turku 14
Budapest 13
Ferrara 13
Lappeenranta 13
Mapello 13
Phoenix 13
San Francisco 13
Boston 12
Totale 15.825
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Nome #
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 283
Modeling and simulation approaches for gate current computation 282
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 245
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 241
A Monte Carlo investigation of nanocrystal memory reliability 238
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 237
Memristive and CMOS Devices for Neuromorphic Computing 237
Reviewing the evolution of the NAND Flash technology 223
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 214
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 213
Investigation of the turn-on of T-RAM cells under transient conditions 212
Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors 210
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 209
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 209
RTN effects in scaled Flash memory arrays 206
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 204
First detection of single-electron charging of the floating gate of NAND Flash memory cells 203
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 201
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 195
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 194
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 193
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 193
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 192
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 192
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 190
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 190
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 189
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 188
Random telegraph noise in 3d nand flash memories 188
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 187
A single-electron analysis of NAND Flash memory programming 187
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 187
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 187
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 184
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 183
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 183
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 183
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 181
A new physics-based model for TANOS memories program/erase 180
Modeling of dynamic operation of T-RAM cells 180
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 179
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 179
Working principles of a DRAM cell based on gated-thyristor bistability 177
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 177
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 177
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 176
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 176
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 174
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 173
Reliability constraints for TANOS memories due to alumina trapping and leakage 172
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 168
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 167
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 165
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 164
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 164
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 163
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 162
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 162
Impact of cell shape on random telegraph noise in decananometer Flash memories 161
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 160
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 159
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 157
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 156
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 155
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 154
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 154
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 153
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 153
Statistical analysis of nanocrystal memory reliability 153
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 152
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 151
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 150
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 150
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 150
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 150
String current in decananometer NAND Flash arrays: a compact-modeling investigation 149
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 148
Investigation of the random telegraph noise instability in scaled Flash memory arrays 148
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 148
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 147
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 147
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 147
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation 147
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 147
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 146
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning 146
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 145
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 145
Data regeneration and disturb immunity of T-RAM cells 144
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 143
Time Dependent Threshold-Voltage Fluctuations in NAND Flash Memories: From Basic Physics to Impact on Array Operation 143
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 142
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 142
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 141
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories 141
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells 140
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions 139
Comments on "A general and transformable model platform for emerging multi-gate MOSFETs" 138
Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modeling 138
Analysis of High-Temperature Data Retention in 3D Floating-Gate NAND Flash Memory Arrays 137
Totale 17.484
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Categoria #
all - tutte 73.701
article - articoli 44.573
book - libri 0
conference - conferenze 26.327
curatela - curatele 0
other - altro 0
patent - brevetti 549
selected - selezionate 0
volume - volumi 2.252
Totale 147.402
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021589 0 0 0 0 0 0 0 0 0 201 142 246
2021/20221.465 85 214 148 93 111 72 110 84 101 66 154 227
2022/20231.709 158 69 51 158 222 291 21 164 270 98 179 28
2023/20241.013 58 169 56 104 46 106 67 50 24 166 24 143
2024/20253.171 19 36 83 158 429 285 119 323 616 202 446 455
2025/202610.360 2.056 1.925 486 816 563 606 1.795 611 541 961 0 0
Totale 25.400