This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion

Characterization and modeling of the band-to-band current variability of nanoscale device junctions

MONZIO COMPAGNONI, CHRISTIAN;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO
2013-01-01

Abstract

This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion
2013
sezele
File in questo prodotto:
File Dimensione Formato  
ted13_3.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 2.31 MB
Formato Adobe PDF
2.31 MB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/749367
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 2
social impact