This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion

Characterization and modeling of the band-to-band current variability of nanoscale device junctions

MONZIO COMPAGNONI, CHRISTIAN;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO
2013

Abstract

This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/749367
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