We present for the first time the direct evidence of an injection statistical spread in the number of electrons placed into the floating-gate of deeply-scaled NAND Flash memories during constant-current Fowler-Nordheim programming. The spread directly affects the precision of the programmed levels and sets the ultimate accuracy of the NAND programming algorithm. Experimental results on technology nodes ranging from 90 nm to 60 nm reveal that the injection statistical spread increases as cell dimensions are reduced and this introduces a new constraint for future NAND memories design.

First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming

MONZIO COMPAGNONI, CHRISTIAN;SOTTOCORNOLA SPINELLI, ALESSANDRO;GUSMEROLI, RICCARDO;LACAITA, ANDREA LEONARDO;
2007

Abstract

We present for the first time the direct evidence of an injection statistical spread in the number of electrons placed into the floating-gate of deeply-scaled NAND Flash memories during constant-current Fowler-Nordheim programming. The spread directly affects the precision of the programmed levels and sets the ultimate accuracy of the NAND programming algorithm. Experimental results on technology nodes ranging from 90 nm to 60 nm reveal that the injection statistical spread increases as cell dimensions are reduced and this introduces a new constraint for future NAND memories design.
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
978-1-4244-1507-6
sezele
File in questo prodotto:
File Dimensione Formato  
iedm07.pdf

Accesso riservato

: Altro materiale allegato
Dimensione 161.06 kB
Formato Adobe PDF
161.06 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/257055
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 60
  • ???jsp.display-item.citation.isi??? 53
social impact