Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium (D2) annealed devices. Two physical mechanisms are clearly recognized during low gate voltage stress (|VG| <<<> |VDS|), namely the Hot-Electron-Induced Punch-through (HE1P) and the Interface State Generation (ISG). The dependence of the degradation dynamics on the gate oxide thickness is discussed in detail, showing that the Deuterium giant isotope effect can improve the lifetime of deep sub-micron pMOSFET's by reducing the ISG process. Finally, the accelerated stress protocol commonly used to evaluate pMOSFET Hot-Carrier reliability is critically reviewed.

Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress

MONZIO COMPAGNONI, CHRISTIAN;PIROVANO, AGOSTINO;LACAITA, ANDREA LEONARDO
2002

Abstract

Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium (D2) annealed devices. Two physical mechanisms are clearly recognized during low gate voltage stress (|VG| <<<> |VDS|), namely the Hot-Electron-Induced Punch-through (HE1P) and the Interface State Generation (ISG). The dependence of the degradation dynamics on the gate oxide thickness is discussed in detail, showing that the Deuterium giant isotope effect can improve the lifetime of deep sub-micron pMOSFET's by reducing the ISG process. Finally, the accelerated stress protocol commonly used to evaluate pMOSFET Hot-Carrier reliability is critically reviewed.
European solid-state device research conference N 32, Firenze, 24/09/2002
88-900847-8-2
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/240434
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