In this paper, we compare quantitatively the results obtained from the numerical simulation of current transport in polysilicon-channel MOSFETs under different modeling assumptions typically adopted to reproduce the basic physics of the devices, including the effective medium approximation and the description of polysilicon as the haphazard ensemble of monocrystalline silicon grains separated by highly defective grain boundaries. In the latter case, both pure drift-diffusion transport and a mix of intra-grain drift-diffusion and inter-grain thermionic emission are considered. Interest is focused on cylindrical nanowire and macaroni gate-all-around structures, due to their relevance in the field of 3-Dimensional NAND Flash memories, focusing not only on the average behavior but also on the variability in the electrical characteristics of the devices.
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs
Aurelio Mannara;Gerardo Malavena;Alessandro Sottocornola Spinelli;Christian Monzio Compagnoni
2021-01-01
Abstract
In this paper, we compare quantitatively the results obtained from the numerical simulation of current transport in polysilicon-channel MOSFETs under different modeling assumptions typically adopted to reproduce the basic physics of the devices, including the effective medium approximation and the description of polysilicon as the haphazard ensemble of monocrystalline silicon grains separated by highly defective grain boundaries. In the latter case, both pure drift-diffusion transport and a mix of intra-grain drift-diffusion and inter-grain thermionic emission are considered. Interest is focused on cylindrical nanowire and macaroni gate-all-around structures, due to their relevance in the field of 3-Dimensional NAND Flash memories, focusing not only on the average behavior but also on the variability in the electrical characteristics of the devices.File | Dimensione | Formato | |
---|---|---|---|
jce_21.pdf
accesso aperto
Descrizione: jce_21
:
Publisher’s version
Dimensione
2.01 MB
Formato
Adobe PDF
|
2.01 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.