We report the first experimental evidence of discrete threshold-voltage transients on high-density NAND Flash arrays during post-cycling data retention. Proper choice of experimental conditions eliminates the impact of averaging effects and disturbs on the transients, enabling clear detection of single charge emission events from/to the tunnel oxide of sub-30nm NAND Flash cells. A stochastic model for the discrete emission process was developed from experimental data, demonstrating that number fluctuation of charges trapped in the tunnel oxide and the statistical nature of their emission dynamics strongly affect the post-cycling data retention performance of the arrays. These results pave the way for further analyses of NAND Flash reliability, where the behavior of single electrons and defects can be monitored and facilitate detailed assessments of the fundamental scaling challenges arising from the discrete nature of charge trapping/detrapping

Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories

MICCOLI, CARMINE;MONZIO COMPAGNONI, CHRISTIAN;PAOLUCCI, GIOVANNI MARIA;LACAITA, ANDREA LEONARDO;SOTTOCORNOLA SPINELLI, ALESSANDRO;
2013

Abstract

We report the first experimental evidence of discrete threshold-voltage transients on high-density NAND Flash arrays during post-cycling data retention. Proper choice of experimental conditions eliminates the impact of averaging effects and disturbs on the transients, enabling clear detection of single charge emission events from/to the tunnel oxide of sub-30nm NAND Flash cells. A stochastic model for the discrete emission process was developed from experimental data, demonstrating that number fluctuation of charges trapped in the tunnel oxide and the statistical nature of their emission dynamics strongly affect the post-cycling data retention performance of the arrays. These results pave the way for further analyses of NAND Flash reliability, where the behavior of single electrons and defects can be monitored and facilitate detailed assessments of the fundamental scaling challenges arising from the discrete nature of charge trapping/detrapping
Proc. IRPS
9781479901135
File in questo prodotto:
File Dimensione Formato  
irps13.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 346.26 kB
Formato Adobe PDF
346.26 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/719751
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 19
  • ???jsp.display-item.citation.isi??? 1
social impact