This paper presents a detailed investigation of the impact of cycling time and temperature on the threshold-voltage instability arising from damage recovery during data retention on nanoscale NAND Flash. Statistical results from the programmed state show that instabilities result, on average, in a thresholdvoltage loss, which increases logarithmically with the time elapsed since the end of cycling. The slope of the logarithmic behavior strongly depends on the electric field during data retention, the cycling dose, and the probability level at which the shift of the array cumulative distribution is monitored. Increasing the cycling time and temperature corresponds, instead, to an quivalent delay of the instant at which the first read operation on the array is performed. The delay is studied for a large variety of cycling and retention conditions, extracting the parameters required for a universal damage-recovery metric for NAND

Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories

MICCOLI, CARMINE;MONZIO COMPAGNONI, CHRISTIAN;SOTTOCORNOLA SPINELLI, ALESSANDRO;
2011

Abstract

This paper presents a detailed investigation of the impact of cycling time and temperature on the threshold-voltage instability arising from damage recovery during data retention on nanoscale NAND Flash. Statistical results from the programmed state show that instabilities result, on average, in a thresholdvoltage loss, which increases logarithmically with the time elapsed since the end of cycling. The slope of the logarithmic behavior strongly depends on the electric field during data retention, the cycling dose, and the probability level at which the shift of the array cumulative distribution is monitored. Increasing the cycling time and temperature corresponds, instead, to an quivalent delay of the instant at which the first read operation on the array is performed. The delay is studied for a large variety of cycling and retention conditions, extracting the parameters required for a universal damage-recovery metric for NAND
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/594481
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