| Nome |
# |
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Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices, file e0c31c0a-9dd0-4599-e053-1705fe0aef77
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493
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Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part II: on-field operation and distributed-cycling effects, file e0c31c0d-54cc-4599-e053-1705fe0aef77
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361
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Memristive and CMOS Devices for Neuromorphic Computing, file e0c31c0f-4fe9-4599-e053-1705fe0aef77
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197
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Random telegraph noise in 3d nand flash memories, file e0c31c11-75f4-4599-e053-1705fe0aef77
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173
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Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays, file e0c31c0e-80bc-4599-e053-1705fe0aef77
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130
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Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities, file e0c31c0d-54cb-4599-e053-1705fe0aef77
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114
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Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array, file e0c31c0e-75f0-4599-e053-1705fe0aef77
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101
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A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs, file e0c31c10-eae8-4599-e053-1705fe0aef77
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93
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First detection of single-electron charging of the floating gate of NAND Flash memory cells, file e0c31c0e-7785-4599-e053-1705fe0aef77
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76
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Working principles of a DRAM cell based on gated-thyristor bistability, file e0c31c0d-c6bc-4599-e053-1705fe0aef77
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73
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Modeling of dynamic operation of T-RAM cells, file e0c31c0e-7783-4599-e053-1705fe0aef77
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72
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Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering, file 81fe06c2-bf01-4c5b-b5fa-23397e97cd42
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40
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Investigation of the turn-on of T-RAM cells under transient conditions, file e0c31c0e-b370-4599-e053-1705fe0aef77
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39
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A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme, file e0c31c11-f00d-4599-e053-1705fe0aef77
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38
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Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories, file e0c31c0e-7784-4599-e053-1705fe0aef77
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31
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Electrode-dependent asymmetric conduction mechanisms in K0.5Na0.5NbO3 micro-capacitors, file 1b5e0223-9661-4706-8186-452d53929789
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14
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Analysis of High-Temperature Data Retention in 3D Floating-Gate NAND Flash Memory Arrays, file bc115be1-b764-4d5e-becb-8beefe7f9547
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10
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Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability, file e0c31c0c-4792-4599-e053-1705fe0aef77
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8
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First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime, file 6cee5bf3-70dd-4a41-8425-603124e191a4
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7
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Reviewing the evolution of the NAND Flash technology, file e0c31c0b-2c26-4599-e053-1705fe0aef77
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7
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Time Dynamics of the Down-Coupling Phenomenon in 3-D NAND Strings, file a776c869-4e04-4739-b990-228176847501
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6
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Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays, file e0c31c0a-668b-4599-e053-1705fe0aef77
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6
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A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories, file e0c31c09-7ec8-4599-e053-1705fe0aef77
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5
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Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution, file e0c31c09-8d15-4599-e053-1705fe0aef77
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5
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Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation, file 076dcee1-ec52-41ee-828b-425ebe533a40
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4
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Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities, file e0c31c08-1ddf-4599-e053-1705fe0aef77
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4
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Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays, file e0c31c08-63ee-4599-e053-1705fe0aef77
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4
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Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells, file e0c31c0b-5c86-4599-e053-1705fe0aef77
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4
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Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays, file e0c31c0c-0d03-4599-e053-1705fe0aef77
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4
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Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings, file e0c31c0d-8b9d-4599-e053-1705fe0aef77
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4
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Variability Effects in Nanowire and Macaroni MOSFETs—Part II: Random Telegraph Noise, file e0c31c0f-4f88-4599-e053-1705fe0aef77
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4
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Variability Effects in Nanowire and Macaroni MOSFETs—Part I: Random Dopant Fluctuations, file e0c31c0f-899f-4599-e053-1705fe0aef77
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4
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Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions, file e0c31c0f-ca1f-4599-e053-1705fe0aef77
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4
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High-Density Solid-State Storage: A Long Path to Success, file e0c31c10-f15b-4599-e053-1705fe0aef77
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4
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Recent Advances in the Understanding of Random Telegraph Noise in 3–D NAND Flash memories, file 3bcbed72-23c7-417d-8c7c-5aa32b567643
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3
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Working principles of a DRAM cell based on gated-thyristor bistability, file e0c31c08-1c28-4599-e053-1705fe0aef77
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3
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Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part II: on-field operation and distributed-cycling effects, file e0c31c08-1de0-4599-e053-1705fe0aef77
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3
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Investigation of the turn-on of T-RAM cells under transient conditions, file e0c31c08-248b-4599-e053-1705fe0aef77
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3
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Modeling of dynamic operation of T-RAM cells, file e0c31c08-3279-4599-e053-1705fe0aef77
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3
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Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories, file e0c31c08-5e4d-4599-e053-1705fe0aef77
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3
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Emerging constraints on NAND Flash memory reliability, file e0c31c09-c9de-4599-e053-1705fe0aef77
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3
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Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays, file e0c31c0c-3dfe-4599-e053-1705fe0aef77
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3
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Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays, file e0c31c12-9639-4599-e053-1705fe0aef77
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3
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String current in decananometer NAND Flash arrays: a compact-modeling investigation, file e0c31c08-048e-4599-e053-1705fe0aef77
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2
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Three-dimensional electrostatics- and atomistic doping-induced variability of RTN time constants in nanoscale MOS devices - Part I: physical investigation, file e0c31c08-048f-4599-e053-1705fe0aef77
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2
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Three-dimensional electrostatics- and atomistic doping-induced variability of RTN time constants in nanoscale MOS devices - Part II: spectroscopic implications, file e0c31c08-0490-4599-e053-1705fe0aef77
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2
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Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology, file e0c31c08-0b3a-4599-e053-1705fe0aef77
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2
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Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors, file e0c31c08-0d4c-4599-e053-1705fe0aef77
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2
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Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array, file e0c31c08-2270-4599-e053-1705fe0aef77
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2
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First detection of single-electron charging of the floating gate of NAND Flash memory cells, file e0c31c08-238a-4599-e053-1705fe0aef77
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2
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First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming, file e0c31c08-2e14-4599-e053-1705fe0aef77
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2
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A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories, file e0c31c09-7a07-4599-e053-1705fe0aef77
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2
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A single-electron analysis of NAND Flash memory programming, file e0c31c09-c304-4599-e053-1705fe0aef77
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2
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Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence, file e0c31c0a-10f8-4599-e053-1705fe0aef77
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2
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|
Comments on "A general and transformable model platform for emerging multi-gate MOSFETs", file e0c31c0b-4a24-4599-e053-1705fe0aef77
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2
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Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays, file e0c31c0b-87c0-4599-e053-1705fe0aef77
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2
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Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise, file e0c31c0c-324c-4599-e053-1705fe0aef77
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2
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Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective, file e0c31c0e-9a52-4599-e053-1705fe0aef77
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2
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Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part II: Array Learning, file e0c31c0e-a3da-4599-e053-1705fe0aef77
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2
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Random Telegraph Noise in Flash Memories, file e0c31c0f-4f8a-4599-e053-1705fe0aef77
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2
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Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention, file 1376082c-c02e-46b6-853d-9c85a1a9eb8d
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1
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Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack, file 4cf4167f-7665-4b46-b1fd-eadc3edf68ff
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1
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Understanding the impact of polysilicon percolative conduction on 3D NAND variability, file 5a50645c-5e9f-450c-9e74-b88471708938
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1
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Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics, file 6a9c6415-c818-4139-aeb7-226130dd1287
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1
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Memristive/CMOS devices for neuromorphic applications, file d57a0d86-9772-4a45-9931-2b2f694fc080
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1
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Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories, file e0c31c07-ccdc-4599-e053-1705fe0aef77
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1
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Silicon nanocrystal memories: a status update, file e0c31c07-d339-4599-e053-1705fe0aef77
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1
|
|
Optimization of threshold voltage window under tunneling program/erase in nanocrystal memories, file e0c31c07-d407-4599-e053-1705fe0aef77
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1
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Edge and percolation effects on VT window in nanocrystal memories, file e0c31c07-d488-4599-e053-1705fe0aef77
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1
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Modeling of tunneling P/E for nanocrystal memories, file e0c31c07-d4fe-4599-e053-1705fe0aef77
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1
|
|
Experimental study of data retention in nitride memories by temperature and field acceleration, file e0c31c07-d565-4599-e053-1705fe0aef77
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1
|
|
Characterization of transient currents in HfO2 capacitors in the short timescale, file e0c31c07-d5d4-4599-e053-1705fe0aef77
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1
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Study of nanocrystal memory reliability by CAST structures, file e0c31c07-d5fb-4599-e053-1705fe0aef77
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1
|
|
Statistical model for random telegraph noise in Flash memories, file e0c31c07-d611-4599-e053-1705fe0aef77
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1
|
|
Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming, file e0c31c07-d6f7-4599-e053-1705fe0aef77
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1
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|
Extraction of the floating-gate capacitive couplings for drain turn-on estimation in discrete-trap memories, file e0c31c07-d74f-4599-e053-1705fe0aef77
|
1
|
|
Comparison of modeling approaches for the capacitance-voltage and current-voltage characteristics of advanced gate stacks, file e0c31c07-d9bf-4599-e053-1705fe0aef77
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1
|
|
Three-dimensional simulation of charge-trap memory programming - Part I: Average behavior, file e0c31c07-dfb4-4599-e053-1705fe0aef77
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1
|
|
Three-dimensional simulation of charge-trap memory programming - Part II: Variability, file e0c31c07-dfb5-4599-e053-1705fe0aef77
|
1
|
|
Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance, file e0c31c07-e140-4599-e053-1705fe0aef77
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1
|
|
Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modeling, file e0c31c07-e142-4599-e053-1705fe0aef77
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1
|
|
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories, file e0c31c07-e144-4599-e053-1705fe0aef77
|
1
|
|
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories, file e0c31c07-e14b-4599-e053-1705fe0aef77
|
1
|
|
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays, file e0c31c07-e14d-4599-e053-1705fe0aef77
|
1
|
|
Variability effects on the VT distribution of nanoscale NAND Flash memories, file e0c31c07-e14e-4599-e053-1705fe0aef77
|
1
|
|
Reliability constraints for TANOS memories due to alumina trapping and leakage, file e0c31c07-e152-4599-e053-1705fe0aef77
|
1
|
|
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories, file e0c31c07-e1ba-4599-e053-1705fe0aef77
|
1
|
|
Semi-analytical model for the transient operation of gate-all-around charge-trap memories, file e0c31c07-e2ad-4599-e053-1705fe0aef77
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1
|
|
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories, file e0c31c07-e35e-4599-e053-1705fe0aef77
|
1
|
|
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices, file e0c31c07-e3be-4599-e053-1705fe0aef77
|
1
|
|
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories, file e0c31c07-e805-4599-e053-1705fe0aef77
|
1
|
|
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories, file e0c31c07-e83d-4599-e053-1705fe0aef77
|
1
|
|
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices, file e0c31c07-f4ee-4599-e053-1705fe0aef77
|
1
|
|
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices, file e0c31c07-f4f1-4599-e053-1705fe0aef77
|
1
|
|
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling, file e0c31c07-f4f3-4599-e053-1705fe0aef77
|
1
|
|
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays, file e0c31c07-f4f8-4599-e053-1705fe0aef77
|
1
|
|
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories, file e0c31c07-f519-4599-e053-1705fe0aef77
|
1
|
|
Evidence for an atomistic-doping induced variability of the band-to-band leakage current of nanoscale device junctions, file e0c31c08-0931-4599-e053-1705fe0aef77
|
1
|
|
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays, file e0c31c08-0932-4599-e053-1705fe0aef77
|
1
|
|
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs, file e0c31c08-0a1b-4599-e053-1705fe0aef77
|
1
|
| Totale |
2.240 |