RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

SOTTOCORNOLA SPINELLI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 18.638
EU - Europa 9.114
AS - Asia 6.782
SA - Sud America 1.152
AF - Africa 260
OC - Oceania 19
Continente sconosciuto - Info sul continente non disponibili 4
Totale 35.969
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Nazione #
US - Stati Uniti d'America 18.279
RU - Federazione Russa 3.508
SG - Singapore 2.436
CN - Cina 1.756
IT - Italia 1.451
BR - Brasile 991
VN - Vietnam 991
UA - Ucraina 578
AT - Austria 572
DE - Germania 494
FR - Francia 490
KR - Corea 416
SE - Svezia 396
GB - Regno Unito 369
FI - Finlandia 342
HK - Hong Kong 279
CA - Canada 260
JP - Giappone 239
NL - Olanda 216
IE - Irlanda 191
MA - Marocco 138
IN - India 133
TW - Taiwan 119
ES - Italia 105
CH - Svizzera 99
BE - Belgio 93
BD - Bangladesh 59
AR - Argentina 56
MX - Messico 50
IQ - Iraq 45
TR - Turchia 43
ID - Indonesia 42
PL - Polonia 38
ZA - Sudafrica 37
PK - Pakistan 32
UZ - Uzbekistan 28
CO - Colombia 24
EC - Ecuador 20
IL - Israele 18
CZ - Repubblica Ceca 17
HU - Ungheria 17
SA - Arabia Saudita 17
AE - Emirati Arabi Uniti 15
AU - Australia 15
NO - Norvegia 15
TN - Tunisia 15
BO - Bolivia 14
PY - Paraguay 14
BG - Bulgaria 13
CI - Costa d'Avorio 13
CR - Costa Rica 13
EG - Egitto 13
KE - Kenya 13
PH - Filippine 13
RO - Romania 13
AZ - Azerbaigian 12
PT - Portogallo 12
VE - Venezuela 11
DK - Danimarca 10
JO - Giordania 10
LB - Libano 10
LT - Lituania 10
DZ - Algeria 9
EE - Estonia 9
GR - Grecia 8
SI - Slovenia 8
TH - Thailandia 8
CL - Cile 7
LV - Lettonia 7
PA - Panama 7
PE - Perù 7
UY - Uruguay 7
ET - Etiopia 6
IR - Iran 6
JM - Giamaica 6
MD - Moldavia 6
AL - Albania 5
HR - Croazia 5
LA - Repubblica Popolare Democratica del Laos 5
LK - Sri Lanka 5
MY - Malesia 5
PS - Palestinian Territory 5
SK - Slovacchia (Repubblica Slovacca) 5
TT - Trinidad e Tobago 5
EU - Europa 4
GT - Guatemala 4
KG - Kirghizistan 4
KZ - Kazakistan 4
NI - Nicaragua 4
OM - Oman 4
RS - Serbia 4
AO - Angola 3
GE - Georgia 3
HN - Honduras 3
IS - Islanda 3
NP - Nepal 3
NZ - Nuova Zelanda 3
TJ - Tagikistan 3
BH - Bahrain 2
CY - Cipro 2
Totale 35.932
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Città #
Fairfield 2.137
Ashburn 1.986
Woodbridge 1.407
Singapore 1.304
San Jose 1.235
Chandler 1.031
Houston 1.004
Seattle 933
Wilmington 887
Ann Arbor 776
Cambridge 712
Vienna 565
Moscow 558
Santa Clara 472
Milan 445
Jacksonville 361
Beijing 352
The Dalles 344
Council Bluffs 342
Seoul 306
Dearborn 294
Boardman 272
Los Angeles 266
Hong Kong 244
Hefei 230
Lawrence 230
Lauterbourg 216
Medford 214
Tokyo 212
Ho Chi Minh City 207
Dublin 190
Ottawa 188
Dong Ket 180
North Charleston 158
Hanoi 138
New York 131
San Diego 116
Helsinki 110
Buffalo 106
London 105
Des Moines 101
Kent 94
Kenitra 87
Dallas 83
Taipei 81
Zurich 81
São Paulo 79
Brussels 71
Málaga 69
Washington 68
Frankfurt am Main 57
Shanghai 49
Udine 49
Las Vegas 48
Orem 46
Redwood City 45
Casablanca 42
Chicago 42
Amsterdam 41
Norwalk 36
Stockholm 35
Da Nang 34
Wuhan 34
Warsaw 32
Atlanta 31
Guangzhou 31
Capelle 30
Jakarta 30
Haiphong 29
Duncan 28
Montreal 28
Rio de Janeiro 26
Tashkent 26
Belo Horizonte 24
Redmond 22
Brooklyn 21
Johannesburg 21
Nuremberg 21
Pohang 21
Rome 21
Chennai 20
Miami 20
Bergamo 19
Curitiba 19
Edinburgh 19
Phoenix 19
Princeton 19
Tianjin 19
Baghdad 18
Denver 18
Munich 18
Turku 18
Zhengzhou 18
Falkenstein 17
Mexico City 17
Porto Alegre 17
San Francisco 16
Toronto 16
Boston 15
Brasília 15
Totale 23.135
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Nome #
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 283
Modeling and simulation approaches for gate current computation 282
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 259
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 253
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 245
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 241
A Monte Carlo investigation of nanocrystal memory reliability 238
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 237
A recombination- and trap-assisted tunneling model for stress-induced leakage current 228
A recombination model for transient and stationary stress-induced leakage current 225
Reviewing the evolution of the NAND Flash technology 223
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 214
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 213
Investigation of the turn-on of T-RAM cells under transient conditions 212
A Multi-Channel Low-Power System-on-Chip for in Vivo Recording and Wireless Transmission of Neural Spikes 212
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 211
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 209
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 209
2D QM simulation and optimization of decanano non-overlapped MOS devices 208
RTN effects in scaled Flash memory arrays 206
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 204
First detection of single-electron charging of the floating gate of NAND Flash memory cells 203
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 201
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 200
Computing of temporal information in spiking neural networks with ReRAM synapses 200
A comparative study of characterization techniques for oxide reliability in Flash memories 198
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 195
An integrated low-noise multichannel system for neural signals amplification 195
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 194
A Low-Power-Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 194
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 193
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 193
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 192
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 192
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 190
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 190
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 189
A Multi-Channel Low-Power IC for Neural Spike Recording with Data Compression and Narrowband 400-MHz MC-FSK Wireless Transmission 189
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 188
Random telegraph noise in 3d nand flash memories 188
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 187
A single-electron analysis of NAND Flash memory programming 187
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 187
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 187
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 184
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 183
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 183
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 181
A new physics-based model for TANOS memories program/erase 180
Modeling of dynamic operation of T-RAM cells 180
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 180
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 179
A Low-power Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 178
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 177
Working principles of a DRAM cell based on gated-thyristor bistability 177
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 177
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 177
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 176
Simple model for the performance of realistic AMR magnetic field sensors 176
A Multi-Channel Low-Power System-on-Chip for in vivo NeuralSpike Recording 175
A Multi-Channel Low-Power System-on-Chip for Single-Unit Recording and Narrowband Wireless Transmission of Neural Signal 174
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 174
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 173
Reliability constraints for TANOS memories due to alumina trapping and leakage 172
A study of hot-hole injection during programming drain disturb in Flash memories 170
Accurate Boundary Integral Calculation in Semiconductor Device Simulation 169
A simple method for efficient spike detection in multiunit recordings 169
Separation of electron and hole traps by transient current analysis 168
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 168
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 167
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 165
Counting photoelectrons in the response of a photomultiplier tube to single picosecond light pulses 165
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 164
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 163
A detailed investigation of the quantum yield experiment 163
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 162
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 162
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 160
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 159
A switched-capacitor neural preamplifier with an adjustable pass-band for fast recovery following stimulation 158
A power-efficient analog integrated circuit for amplification and detection of neural signals 157
A wireless microsystem with digital data compression for neural spike recording 157
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 157
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 156
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 155
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 154
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 154
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 153
Statistical analysis of nanocrystal memory reliability 153
Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting 152
Detection of nondelayed photons in the forward-scattering of picosecond pulses 152
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 152
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 151
Impact of Source-Drain Tunneling on Double-Gate Performance 150
A new charge-trapping technique to extract SILC-trap time constants in SiO2 150
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 150
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 150
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier 150
String current in decananometer NAND Flash arrays: a compact-modeling investigation 149
Investigation of the random telegraph noise instability in scaled Flash memory arrays 148
Totale 18.482
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Categoria #
all - tutte 105.553
article - articoli 63.356
book - libri 0
conference - conferenze 39.794
curatela - curatele 0
other - altro 0
patent - brevetti 871
selected - selezionate 0
volume - volumi 1.532
Totale 211.106
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021911 0 0 0 0 0 0 0 0 0 289 210 412
2021/20222.171 137 278 175 114 229 117 157 99 137 134 209 385
2022/20232.520 259 146 62 250 314 419 21 236 392 116 262 43
2023/20241.335 75 258 70 141 75 163 60 66 33 186 24 184
2024/20254.143 33 46 105 175 574 348 141 435 834 239 595 618
2025/202613.680 2.681 2.584 570 1.042 701 803 2.364 804 759 1.372 0 0
Totale 36.348