RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

SOTTOCORNOLA SPINELLI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 19.120
EU - Europa 9.261
AS - Asia 6.806
SA - Sud America 1.152
AF - Africa 260
OC - Oceania 19
Continente sconosciuto - Info sul continente non disponibili 4
Totale 36.622
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Nazione #
US - Stati Uniti d'America 18.751
RU - Federazione Russa 3.508
SG - Singapore 2.440
CN - Cina 1.764
IT - Italia 1.590
BR - Brasile 991
VN - Vietnam 991
UA - Ucraina 578
AT - Austria 572
DE - Germania 495
FR - Francia 492
KR - Corea 417
SE - Svezia 396
GB - Regno Unito 369
FI - Finlandia 342
HK - Hong Kong 281
CA - Canada 266
JP - Giappone 239
NL - Olanda 217
IE - Irlanda 191
MA - Marocco 138
IN - India 133
TW - Taiwan 121
ES - Italia 105
CH - Svizzera 99
BE - Belgio 93
BD - Bangladesh 65
AR - Argentina 56
MX - Messico 50
IQ - Iraq 45
TR - Turchia 43
ID - Indonesia 42
PL - Polonia 41
ZA - Sudafrica 37
PK - Pakistan 32
UZ - Uzbekistan 28
CO - Colombia 24
EC - Ecuador 20
IL - Israele 18
CZ - Repubblica Ceca 17
HU - Ungheria 17
SA - Arabia Saudita 17
AE - Emirati Arabi Uniti 15
AU - Australia 15
NO - Norvegia 15
TN - Tunisia 15
BO - Bolivia 14
PY - Paraguay 14
BG - Bulgaria 13
CI - Costa d'Avorio 13
CR - Costa Rica 13
EG - Egitto 13
KE - Kenya 13
PH - Filippine 13
RO - Romania 13
AZ - Azerbaigian 12
PT - Portogallo 12
VE - Venezuela 11
DK - Danimarca 10
JO - Giordania 10
LB - Libano 10
LT - Lituania 10
DZ - Algeria 9
EE - Estonia 9
GR - Grecia 8
JM - Giamaica 8
SI - Slovenia 8
TH - Thailandia 8
CL - Cile 7
LV - Lettonia 7
MD - Moldavia 7
PA - Panama 7
PE - Perù 7
UY - Uruguay 7
ET - Etiopia 6
IR - Iran 6
MY - Malesia 6
TT - Trinidad e Tobago 6
AL - Albania 5
HR - Croazia 5
LA - Repubblica Popolare Democratica del Laos 5
LK - Sri Lanka 5
PS - Palestinian Territory 5
SK - Slovacchia (Repubblica Slovacca) 5
EU - Europa 4
GT - Guatemala 4
KG - Kirghizistan 4
KZ - Kazakistan 4
NI - Nicaragua 4
OM - Oman 4
RS - Serbia 4
AO - Angola 3
GE - Georgia 3
HN - Honduras 3
IS - Islanda 3
NP - Nepal 3
NZ - Nuova Zelanda 3
TJ - Tagikistan 3
BH - Bahrain 2
BS - Bahamas 2
Totale 36.584
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Città #
Fairfield 2.137
Ashburn 2.031
Woodbridge 1.407
San Jose 1.358
Singapore 1.307
Chandler 1.031
Houston 1.012
Seattle 933
Wilmington 887
Ann Arbor 776
Cambridge 712
Milan 565
Vienna 565
Moscow 558
Santa Clara 476
Council Bluffs 398
Jacksonville 363
Beijing 356
The Dalles 344
Boardman 320
Seoul 306
Dearborn 294
Los Angeles 275
Hong Kong 246
Hefei 230
Lawrence 230
Lauterbourg 216
Medford 214
Tokyo 212
Ho Chi Minh City 207
Dublin 190
Ottawa 188
Dong Ket 180
North Charleston 158
Hanoi 138
New York 137
San Diego 117
Helsinki 110
Buffalo 107
London 105
Des Moines 102
Kent 94
Dallas 89
Kenitra 87
Taipei 81
Zurich 81
São Paulo 79
Brussels 71
Málaga 69
Washington 69
Frankfurt am Main 57
Udine 52
Shanghai 50
Las Vegas 49
Orem 49
Redwood City 45
Chicago 44
Amsterdam 42
Casablanca 42
Norwalk 36
Stockholm 35
Warsaw 35
Atlanta 34
Da Nang 34
Wuhan 34
Guangzhou 31
Capelle 30
Jakarta 30
Montreal 30
Haiphong 29
Duncan 28
Rio de Janeiro 26
Tashkent 26
Brooklyn 25
Belo Horizonte 24
Pohang 22
Redmond 22
Johannesburg 21
Miami 21
Nuremberg 21
Phoenix 21
Rome 21
Chennai 20
San Francisco 20
Bergamo 19
Curitiba 19
Denver 19
Edinburgh 19
Munich 19
Princeton 19
Tianjin 19
Baghdad 18
Turku 18
Zhengzhou 18
Falkenstein 17
Mexico City 17
Porto Alegre 17
Verona 17
Toronto 16
Boston 15
Totale 23.610
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Nome #
Modeling and simulation approaches for gate current computation 289
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 285
A recombination- and trap-assisted tunneling model for stress-induced leakage current 283
A recombination model for transient and stationary stress-induced leakage current 279
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 262
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 256
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 248
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 244
A Monte Carlo investigation of nanocrystal memory reliability 240
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 237
Reviewing the evolution of the NAND Flash technology 227
A Multi-Channel Low-Power System-on-Chip for in Vivo Recording and Wireless Transmission of Neural Spikes 217
Investigation of the turn-on of T-RAM cells under transient conditions 215
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 214
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 214
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 213
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 211
RTN effects in scaled Flash memory arrays 210
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 210
2D QM simulation and optimization of decanano non-overlapped MOS devices 210
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 205
First detection of single-electron charging of the floating gate of NAND Flash memory cells 205
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 203
Computing of temporal information in spiking neural networks with ReRAM synapses 203
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 201
A comparative study of characterization techniques for oxide reliability in Flash memories 201
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 201
An integrated low-noise multichannel system for neural signals amplification 198
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 198
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 197
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 197
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 196
A Low-Power-Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 195
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 195
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 194
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 193
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 193
A Multi-Channel Low-Power IC for Neural Spike Recording with Data Compression and Narrowband 400-MHz MC-FSK Wireless Transmission 190
Random telegraph noise in 3d nand flash memories 190
A single-electron analysis of NAND Flash memory programming 189
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 189
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 189
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 188
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 187
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 185
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 184
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 184
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 182
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 182
A new physics-based model for TANOS memories program/erase 181
Modeling of dynamic operation of T-RAM cells 181
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 181
Working principles of a DRAM cell based on gated-thyristor bistability 180
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 180
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 179
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 179
A Low-power Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 179
A Multi-Channel Low-Power System-on-Chip for Single-Unit Recording and Narrowband Wireless Transmission of Neural Signal 177
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 177
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 177
Simple model for the performance of realistic AMR magnetic field sensors 177
A Multi-Channel Low-Power System-on-Chip for in vivo NeuralSpike Recording 176
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 174
A simple method for efficient spike detection in multiunit recordings 174
Reliability constraints for TANOS memories due to alumina trapping and leakage 173
Accurate Boundary Integral Calculation in Semiconductor Device Simulation 171
A study of hot-hole injection during programming drain disturb in Flash memories 170
Separation of electron and hole traps by transient current analysis 170
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 169
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 168
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 168
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 168
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 167
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 167
Counting photoelectrons in the response of a photomultiplier tube to single picosecond light pulses 167
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 166
A detailed investigation of the quantum yield experiment 165
A power-efficient analog integrated circuit for amplification and detection of neural signals 162
A switched-capacitor neural preamplifier with an adjustable pass-band for fast recovery following stimulation 162
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 161
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 159
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 158
A wireless microsystem with digital data compression for neural spike recording 157
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 156
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 156
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 156
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 156
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 156
A new charge-trapping technique to extract SILC-trap time constants in SiO2 155
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 155
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 155
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 155
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 155
Detection of nondelayed photons in the forward-scattering of picosecond pulses 154
Statistical analysis of nanocrystal memory reliability 154
Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting 153
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 153
Investigation of the random telegraph noise instability in scaled Flash memory arrays 152
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 152
A Noise-Resilient Neuromorphic Digit Classifier Based on NOR Flash Memories with Pulse-Width Modulation Scheme 152
Totale 18.823
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Categoria #
all - tutte 110.416
article - articoli 66.202
book - libri 0
conference - conferenze 41.683
curatela - curatele 0
other - altro 0
patent - brevetti 923
selected - selezionate 0
volume - volumi 1.608
Totale 220.832
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021412 0 0 0 0 0 0 0 0 0 0 0 412
2021/20222.171 137 278 175 114 229 117 157 99 137 134 209 385
2022/20232.520 259 146 62 250 314 419 21 236 392 116 262 43
2023/20241.335 75 258 70 141 75 163 60 66 33 186 24 184
2024/20254.143 33 46 105 175 574 348 141 435 834 239 595 618
2025/202614.336 2.681 2.584 570 1.042 701 803 2.364 804 759 1.455 378 195
Totale 37.004