RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

SOTTOCORNOLA SPINELLI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 20.002
EU - Europa 10.075
AS - Asia 6.891
SA - Sud America 1.173
Continente sconosciuto - Info sul continente non disponibili 389
AF - Africa 260
OC - Oceania 19
Totale 38.809
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Nazione #
US - Stati Uniti d'America 19.556
RU - Federazione Russa 3.508
SG - Singapore 2.440
IT - Italia 2.384
CN - Cina 1.769
VN - Vietnam 1.046
BR - Brasile 1.002
UA - Ucraina 579
AT - Austria 572
DE - Germania 495
FR - Francia 492
KR - Corea 426
SE - Svezia 396
GB - Regno Unito 372
FI - Finlandia 342
CA - Canada 305
HK - Hong Kong 284
JP - Giappone 240
NL - Olanda 218
IE - Irlanda 192
MA - Marocco 138
IN - India 133
TW - Taiwan 127
ES - Italia 109
CH - Svizzera 99
BE - Belgio 94
BD - Bangladesh 70
AR - Argentina 61
MX - Messico 50
IQ - Iraq 45
PL - Polonia 43
TR - Turchia 43
ID - Indonesia 42
ZA - Sudafrica 37
PK - Pakistan 32
UZ - Uzbekistan 28
CO - Colombia 26
JM - Giamaica 21
CR - Costa Rica 20
EC - Ecuador 20
HU - Ungheria 18
IL - Israele 18
CZ - Repubblica Ceca 17
SA - Arabia Saudita 17
NO - Norvegia 16
AE - Emirati Arabi Uniti 15
AU - Australia 15
TN - Tunisia 15
BG - Bulgaria 14
BO - Bolivia 14
PY - Paraguay 14
CI - Costa d'Avorio 13
EG - Egitto 13
KE - Kenya 13
PH - Filippine 13
PT - Portogallo 13
RO - Romania 13
AZ - Azerbaigian 12
TT - Trinidad e Tobago 11
VE - Venezuela 11
DK - Danimarca 10
JO - Giordania 10
LB - Libano 10
LT - Lituania 10
CL - Cile 9
DZ - Algeria 9
EE - Estonia 9
GR - Grecia 8
GT - Guatemala 8
MD - Moldavia 8
SI - Slovenia 8
TH - Thailandia 8
LV - Lettonia 7
MY - Malesia 7
NI - Nicaragua 7
PA - Panama 7
PE - Perù 7
UY - Uruguay 7
ET - Etiopia 6
IR - Iran 6
SK - Slovacchia (Repubblica Slovacca) 6
AL - Albania 5
HN - Honduras 5
HR - Croazia 5
LA - Repubblica Popolare Democratica del Laos 5
LK - Sri Lanka 5
PS - Palestinian Territory 5
RS - Serbia 5
BS - Bahamas 4
EU - Europa 4
KG - Kirghizistan 4
KZ - Kazakistan 4
OM - Oman 4
AO - Angola 3
GE - Georgia 3
IS - Islanda 3
NP - Nepal 3
NZ - Nuova Zelanda 3
TJ - Tagikistan 3
BH - Bahrain 2
Totale 38.383
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Città #
Fairfield 2.138
Ashburn 2.082
Woodbridge 1.409
San Jose 1.364
Singapore 1.307
Chandler 1.031
Houston 1.013
Seattle 936
Wilmington 889
Milan 872
Ann Arbor 776
Cambridge 712
Council Bluffs 615
Vienna 565
Moscow 558
Santa Clara 483
Jacksonville 365
Beijing 359
The Dalles 345
Boardman 320
Seoul 307
Dearborn 294
Los Angeles 283
Hong Kong 248
Ho Chi Minh City 233
Hefei 230
Lawrence 230
Lauterbourg 216
Medford 215
Tokyo 213
Dublin 190
Ottawa 189
Dong Ket 180
North Charleston 160
Hanoi 153
New York 147
Rome 121
San Diego 117
Helsinki 110
Buffalo 108
London 105
Des Moines 102
Kent 94
Dallas 91
Kenitra 87
Taipei 84
Zurich 81
São Paulo 79
Washington 72
Brussels 71
Málaga 69
Frankfurt am Main 57
Udine 56
Las Vegas 51
Shanghai 50
Orem 49
Chicago 48
Redwood City 45
Amsterdam 42
Casablanca 42
Atlanta 41
Naples 37
Da Nang 36
Norwalk 36
Stockholm 35
Warsaw 35
Wuhan 34
Montreal 32
Phoenix 32
Guangzhou 31
Haiphong 31
Capelle 30
Jakarta 30
Brooklyn 28
Duncan 28
Rio de Janeiro 27
Turin 27
Frisco 26
Miami 26
Tashkent 26
Belo Horizonte 25
San Francisco 24
Verona 24
Denver 23
Pohang 22
Redmond 22
Bologna 21
Johannesburg 21
Nuremberg 21
Bergamo 20
Chennai 20
Curitiba 19
Edinburgh 19
Munich 19
Princeton 19
Tianjin 19
Toronto 19
Baghdad 18
Turku 18
Zhengzhou 18
Totale 24.497
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Nome #
A comparative study of characterization techniques for oxide reliability in Flash memories 386
A recombination- and trap-assisted tunneling model for stress-induced leakage current 330
A recombination model for transient and stationary stress-induced leakage current 323
Modeling and simulation approaches for gate current computation 296
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 292
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 265
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 265
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 256
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 250
A Monte Carlo investigation of nanocrystal memory reliability 248
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 242
Reviewing the evolution of the NAND Flash technology 232
Investigation of the turn-on of T-RAM cells under transient conditions 222
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 222
A Multi-Channel Low-Power System-on-Chip for in Vivo Recording and Wireless Transmission of Neural Spikes 220
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 219
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 217
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 215
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 214
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 213
2D QM simulation and optimization of decanano non-overlapped MOS devices 213
RTN effects in scaled Flash memory arrays 211
First detection of single-electron charging of the floating gate of NAND Flash memory cells 209
Computing of temporal information in spiking neural networks with ReRAM synapses 209
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 208
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 207
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 207
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 205
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 202
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 202
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 201
An integrated low-noise multichannel system for neural signals amplification 200
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 199
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 198
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 198
A Low-Power-Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 198
Random telegraph noise in 3d nand flash memories 198
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 197
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 196
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 195
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 195
A single-electron analysis of NAND Flash memory programming 194
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 194
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 193
A Multi-Channel Low-Power IC for Neural Spike Recording with Data Compression and Narrowband 400-MHz MC-FSK Wireless Transmission 193
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 192
Working principles of a DRAM cell based on gated-thyristor bistability 190
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 190
A study of hot-hole injection during programming drain disturb in Flash memories 189
Reliability constraints for TANOS memories due to alumina trapping and leakage 189
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 189
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 188
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 186
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 184
Modeling of dynamic operation of T-RAM cells 184
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 184
A new physics-based model for TANOS memories program/erase 183
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 183
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 182
A Multi-Channel Low-Power System-on-Chip for Single-Unit Recording and Narrowband Wireless Transmission of Neural Signal 181
Simple model for the performance of realistic AMR magnetic field sensors 181
A Low-power Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 181
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 180
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 180
Accurate Boundary Integral Calculation in Semiconductor Device Simulation 180
A Multi-Channel Low-Power System-on-Chip for in vivo NeuralSpike Recording 179
A simple method for efficient spike detection in multiunit recordings 178
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 177
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 176
A detailed investigation of the quantum yield experiment 175
A switched-capacitor neural preamplifier with an adjustable pass-band for fast recovery following stimulation 175
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 174
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 174
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 173
Separation of electron and hole traps by transient current analysis 173
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 172
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 170
A power-efficient analog integrated circuit for amplification and detection of neural signals 170
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 170
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 168
Counting photoelectrons in the response of a photomultiplier tube to single picosecond light pulses 168
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 165
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 164
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 164
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 164
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 162
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 162
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective 161
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 160
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 160
A wireless microsystem with digital data compression for neural spike recording 160
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 160
A new charge-trapping technique to extract SILC-trap time constants in SiO2 159
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 159
Statistical analysis of nanocrystal memory reliability 159
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 159
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics 159
String current in decananometer NAND Flash arrays: a compact-modeling investigation 158
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 158
Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting 157
Totale 19.667
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Categoria #
all - tutte 115.829
article - articoli 69.554
book - libri 0
conference - conferenze 43.620
curatela - curatele 0
other - altro 0
patent - brevetti 973
selected - selezionate 0
volume - volumi 1.682
Totale 231.658
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.034 0 278 175 114 229 117 157 99 137 134 209 385
2022/20232.520 259 146 62 250 314 419 21 236 392 116 262 43
2023/20241.335 75 258 70 141 75 163 60 66 33 186 24 184
2024/20254.143 33 46 105 175 574 348 141 435 834 239 595 618
2025/202615.225 2.681 2.584 570 1.042 701 803 2.364 804 759 1.455 378 1.084
2026/2027916 390 526 0 0 0 0 0 0 0 0 0 0
Totale 38.809