RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

SOTTOCORNOLA SPINELLI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 21.422
EU - Europa 10.361
AS - Asia 6.926
SA - Sud America 1.200
Continente sconosciuto - Info sul continente non disponibili 392
AF - Africa 260
OC - Oceania 19
Totale 40.580
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Nazione #
US - Stati Uniti d'America 20.888
RU - Federazione Russa 3.510
IT - Italia 2.640
SG - Singapore 2.447
CN - Cina 1.773
VN - Vietnam 1.047
BR - Brasile 1.024
UA - Ucraina 579
AT - Austria 572
DE - Germania 499
FR - Francia 493
KR - Corea 434
SE - Svezia 397
GB - Regno Unito 386
CA - Canada 348
FI - Finlandia 342
HK - Hong Kong 284
JP - Giappone 245
NL - Olanda 220
IE - Irlanda 193
MA - Marocco 138
IN - India 134
TW - Taiwan 127
ES - Italia 109
CH - Svizzera 99
BE - Belgio 94
BD - Bangladesh 71
AR - Argentina 61
MX - Messico 51
IQ - Iraq 45
TR - Turchia 44
ID - Indonesia 43
PL - Polonia 43
ZA - Sudafrica 37
CR - Costa Rica 32
PK - Pakistan 32
CO - Colombia 28
UZ - Uzbekistan 28
JM - Giamaica 26
EC - Ecuador 20
IL - Israele 19
HU - Ungheria 18
SA - Arabia Saudita 18
CZ - Repubblica Ceca 17
AE - Emirati Arabi Uniti 16
NO - Norvegia 16
TT - Trinidad e Tobago 16
AU - Australia 15
PH - Filippine 15
TN - Tunisia 15
BG - Bulgaria 14
BO - Bolivia 14
PY - Paraguay 14
RO - Romania 14
VE - Venezuela 14
CI - Costa d'Avorio 13
EG - Egitto 13
KE - Kenya 13
PT - Portogallo 13
AZ - Azerbaigian 12
DK - Danimarca 12
NI - Nicaragua 12
EE - Estonia 11
GT - Guatemala 10
HN - Honduras 10
JO - Giordania 10
LB - Libano 10
LT - Lituania 10
CL - Cile 9
DZ - Algeria 9
TH - Thailandia 9
GR - Grecia 8
MD - Moldavia 8
PA - Panama 8
SI - Slovenia 8
LV - Lettonia 7
MY - Malesia 7
PE - Perù 7
UY - Uruguay 7
ET - Etiopia 6
IR - Iran 6
SK - Slovacchia (Repubblica Slovacca) 6
AL - Albania 5
HR - Croazia 5
LA - Repubblica Popolare Democratica del Laos 5
LK - Sri Lanka 5
PS - Palestinian Territory 5
RS - Serbia 5
BS - Bahamas 4
EU - Europa 4
KG - Kirghizistan 4
KZ - Kazakistan 4
OM - Oman 4
SV - El Salvador 4
AO - Angola 3
GE - Georgia 3
IS - Islanda 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PR - Porto Rico 3
Totale 40.144
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Città #
Ashburn 2.481
Fairfield 2.140
San Jose 1.555
Woodbridge 1.409
Singapore 1.308
Chandler 1.031
Houston 1.021
Milan 978
Seattle 937
Wilmington 890
Ann Arbor 776
Cambridge 712
Council Bluffs 649
Vienna 565
Moscow 558
Santa Clara 509
Jacksonville 366
Beijing 359
The Dalles 349
Boardman 323
Seoul 309
Los Angeles 302
Dearborn 294
Hong Kong 248
Ho Chi Minh City 233
Hefei 230
Lawrence 230
Lauterbourg 216
Medford 215
Tokyo 214
Dublin 190
Ottawa 189
Dong Ket 180
North Charleston 160
New York 155
Hanoi 154
Rome 129
San Diego 117
Buffalo 110
Helsinki 110
London 109
Des Moines 103
Dallas 97
Kent 95
Phoenix 90
São Paulo 89
Kenitra 87
Taipei 84
Zurich 81
Washington 77
Brussels 71
Málaga 69
Chicago 62
Udine 61
Frankfurt am Main 57
Las Vegas 54
Atlanta 50
Orem 50
Shanghai 50
Redwood City 45
Amsterdam 42
Casablanca 42
Naples 42
Brooklyn 39
Da Nang 36
Norwalk 36
Stockholm 36
Warsaw 35
Wuhan 34
Miami 33
Montreal 33
Denver 31
Guangzhou 31
Haiphong 31
Capelle 30
Jakarta 30
Turin 30
Miano 29
Duncan 28
Toronto 28
Rio de Janeiro 27
Frisco 26
San Francisco 26
Tashkent 26
Belo Horizonte 25
San José 25
Verona 24
Pohang 23
Bologna 22
Redmond 22
Bergamo 21
Johannesburg 21
Nuremberg 21
Brasília 20
Chennai 20
Boston 19
Charlotte 19
Curitiba 19
Edinburgh 19
Munich 19
Totale 25.502
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Nome #
A comparative study of characterization techniques for oxide reliability in Flash memories 389
A recombination- and trap-assisted tunneling model for stress-induced leakage current 341
A recombination model for transient and stationary stress-induced leakage current 334
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions 306
Modeling and simulation approaches for gate current computation 304
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 282
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 271
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 262
Reliability of NAND Flash memories: planar cells and emerging issues in 3D devices 259
A Monte Carlo investigation of nanocrystal memory reliability 258
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 248
Reviewing the evolution of the NAND Flash technology 239
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 234
Investigation of the turn-on of T-RAM cells under transient conditions 229
A Multi-Channel Low-Power System-on-Chip for in Vivo Recording and Wireless Transmission of Neural Spikes 228
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 226
Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories 223
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 223
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 222
First detection of single-electron charging of the floating gate of NAND Flash memory cells 221
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 218
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 218
Computing of temporal information in spiking neural networks with ReRAM synapses 218
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack 217
RTN effects in scaled Flash memory arrays 217
2D QM simulation and optimization of decanano non-overlapped MOS devices 216
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 213
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 212
Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation 211
Accelerated reliability testing of Flash memory: accuracy and issues on a 45nm NOR technology 209
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories 209
An integrated low-noise multichannel system for neural signals amplification 207
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 206
Random telegraph noise in 3d nand flash memories 206
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis 204
A comparison of modeling approaches for current transport in polysilicon‑channel nanowire and macaroni GAA MOSFETs 204
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 204
A Low-Power-Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 203
Working principles of a DRAM cell based on gated-thyristor bistability 202
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 202
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings 202
A Multi-Channel Low-Power IC for Neural Spike Recording with Data Compression and Narrowband 400-MHz MC-FSK Wireless Transmission 201
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 200
Implementing spike-timing-dependent plasticity and unsupervised learning in a mainstream NOR Flash memory array 200
A single-electron analysis of NAND Flash memory programming 199
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 199
Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays 199
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 198
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 195
Reliability constraints for TANOS memories due to alumina trapping and leakage 194
A study of hot-hole injection during programming drain disturb in Flash memories 192
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 192
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 192
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 191
Assessment of distributed-cycling schemes on 45nm NOR Flash memory arrays 190
A new physics-based model for TANOS memories program/erase 189
A Multi-Channel Low-Power System-on-Chip for Single-Unit Recording and Narrowband Wireless Transmission of Neural Signal 189
Modeling of dynamic operation of T-RAM cells 189
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 188
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 188
A Multi-Channel Low-Power System-on-Chip for in vivo NeuralSpike Recording 187
Investigation of the moisture-driven dynamics of time-dependent dielectric breakdown in polymeric dielectrics for galvanic isolators 186
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 185
Accurate Boundary Integral Calculation in Semiconductor Device Simulation 185
Simple model for the performance of realistic AMR magnetic field sensors 185
A Low-power Integrated Circuit for Analog Spike Detection and Sorting in Neural Prosthesis Systems 185
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 183
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 183
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 182
A simple method for efficient spike detection in multiunit recordings 182
A detailed investigation of the quantum yield experiment 181
A switched-capacitor neural preamplifier with an adjustable pass-band for fast recovery following stimulation 181
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 180
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 179
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 179
Separation of electron and hole traps by transient current analysis 178
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories 178
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 177
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics 176
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 176
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 176
A power-efficient analog integrated circuit for amplification and detection of neural signals 174
Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics 174
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 173
Counting photoelectrons in the response of a photomultiplier tube to single picosecond light pulses 172
String current in decananometer NAND Flash arrays: a compact-modeling investigation 171
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions 170
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming 170
Reliability characterization issues for nanoscale Flash memories: a case study on 45-nm NOR devices 169
Characterization and modeling of the band-to-band current variability of nanoscale device junctions 168
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 168
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays 168
A new charge-trapping technique to extract SILC-trap time constants in SiO2 167
A wireless microsystem with digital data compression for neural spike recording 167
Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting 166
Statistical analysis of nanocrystal memory reliability 166
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories 165
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 165
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 165
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 165
Totale 20.389
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Categoria #
all - tutte 121.171
article - articoli 72.794
book - libri 0
conference - conferenze 45.587
curatela - curatele 0
other - altro 0
patent - brevetti 1.016
selected - selezionate 0
volume - volumi 1.774
Totale 242.342
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.581 0 0 0 114 229 117 157 99 137 134 209 385
2022/20232.520 259 146 62 250 314 419 21 236 392 116 262 43
2023/20241.335 75 258 70 141 75 163 60 66 33 186 24 184
2024/20254.143 33 46 105 175 574 348 141 435 834 239 595 618
2025/202615.225 2.681 2.584 570 1.042 701 803 2.364 804 759 1.455 378 1.084
2026/20272.687 390 592 944 761 0 0 0 0 0 0 0 0
Totale 40.580