RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

IELMINI, DANIELE
 Distribuzione geografica
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Continente #
NA - Nord America 21.758
EU - Europa 7.051
AS - Asia 2.646
AF - Africa 57
SA - Sud America 42
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 8
Totale 31.571
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Nazione #
US - Stati Uniti d'America 21.165
IT - Italia 1.907
DE - Germania 866
AT - Austria 844
UA - Ucraina 728
SG - Singapore 723
CN - Cina 683
CA - Canada 585
FI - Finlandia 565
GB - Regno Unito 542
SE - Svezia 522
VN - Vietnam 403
IE - Irlanda 308
FR - Francia 222
JO - Giordania 177
KR - Corea 143
ES - Italia 125
ID - Indonesia 110
NL - Olanda 106
IN - India 86
HK - Hong Kong 83
TW - Taiwan 72
BE - Belgio 69
JP - Giappone 69
RU - Federazione Russa 66
SI - Slovenia 39
CH - Svizzera 36
GR - Grecia 27
BR - Brasile 24
IL - Israele 20
BJ - Benin 19
RO - Romania 15
CI - Costa d'Avorio 14
TR - Turchia 14
MU - Mauritius 13
PH - Filippine 10
PL - Polonia 10
SA - Arabia Saudita 9
BG - Bulgaria 8
LU - Lussemburgo 8
DK - Danimarca 7
EU - Europa 7
IR - Iran 7
LT - Lituania 7
CO - Colombia 6
CZ - Repubblica Ceca 6
HU - Ungheria 6
PK - Pakistan 6
AR - Argentina 5
AU - Australia 5
IQ - Iraq 5
MY - Malesia 5
MX - Messico 4
TH - Thailandia 4
AZ - Azerbaigian 3
NZ - Nuova Zelanda 3
ZA - Sudafrica 3
AP - ???statistics.table.value.countryCode.AP??? 2
BO - Bolivia 2
EE - Estonia 2
EG - Egitto 2
KG - Kirghizistan 2
LI - Liechtenstein 2
MA - Marocco 2
MN - Mongolia 2
NP - Nepal 2
OM - Oman 2
PE - Perù 2
PR - Porto Rico 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
BD - Bangladesh 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CL - Cile 1
CY - Cipro 1
EC - Ecuador 1
GL - Groenlandia 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
NG - Nigeria 1
PA - Panama 1
PY - Paraguay 1
RS - Serbia 1
SC - Seychelles 1
Totale 31.571
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Città #
Fairfield 2.968
Woodbridge 1.944
Santa Clara 1.745
Chandler 1.699
Ashburn 1.445
Houston 1.407
Wilmington 1.304
Seattle 1.248
Cambridge 1.029
Ann Arbor 937
Vienna 842
Singapore 556
Milan 467
Boardman 458
Dearborn 437
Jacksonville 437
Lawrence 373
Medford 355
Ottawa 343
Dublin 280
Helsinki 269
Beijing 233
Munich 221
Dong Ket 211
Montréal 203
Mcallen 185
San Diego 185
Amman 177
Des Moines 160
New York 111
Jakarta 110
Málaga 104
Norwalk 89
Redwood City 81
Redmond 79
Washington 73
Shanghai 70
Rome 68
Amsterdam 64
Lucca 63
London 52
Menlo Park 45
Brussels 41
Taipei 36
Frankfurt am Main 35
Wuhan 35
Phoenix 33
Lappeenranta 32
Hong Kong 29
Duncan 25
Nanjing 25
Mountain View 24
Seoul 24
Bologna 22
Los Angeles 22
Aachen 21
Bonndorf 21
Princeton 21
Livorno 20
Verona 20
Cotonou 19
Gif-sur-yvette 19
Zhengzhou 19
Chicago 17
Central 16
Falkenstein 16
Hefei 16
Nuremberg 15
San Jose 15
Seongnam 15
Abidjan 14
Busto Arsizio 14
Indiana 14
Kraainem 13
Pohang 13
Portland 13
Tokyo 13
Berlin 12
Miami 12
Zurich 12
Central District 11
Chongqing 11
Fremont 11
Guangzhou 11
Moscow 11
Columbus 10
Edinburgh 10
Falls Church 10
Ferrara 10
Gunzenhausen 10
Hangzhou 10
Kunming 10
Auburn Hills 9
Cortenuova 9
Dresden 9
Groningen 9
Hounslow 9
Montreal 9
Bergamo 8
Brescia 8
Totale 24.105
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Nome #
Stochastic Memory Devices for Security and Computing 911
In-memory computing with resistive switching devices 420
Fast solution of linear systems with analog resistive switching memory (RRAM) 356
A Universal, Analog, In-Memory Computing Primitive for Linear Algebra Using Memristors 184
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 176
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 161
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 152
CIRCUITO DI RISOLUZIONE DI PROBLEMI MATEMATICI COMPRENDENTE ELEMENTI RESISTIVI 144
A Monte Carlo investigation of nanocrystal memory reliability 143
Synaptic realizations based on memristive devices 138
Assessment of threshold switching dynamics in phase-change chalcogenide memories 134
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 133
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks 131
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 128
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 128
Memristive and CMOS Devices for Neuromorphic Computing 128
A bio-inspired recurrent neural network with self-adaptive neurons and PCM synapses for solving reinforcement learning tasks 128
A Brain-Inspired Homeostatic Neuron Based on Phase-Change Memories for Efficient Neuromorphic Computing 128
Brain-inspired neuromorphic computing with phase change memory (PCM) synapses 126
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 125
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity 125
Emerging neuromorphic devices 125
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 123
Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5 122
Random telegraph signal noise in phase change memory devices 121
Impact of thermoelectric effects on phase change memory characteristics 120
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 120
A comparative study of characterization techniques for oxide reliability in Flash memories 118
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 118
Self-Aligned Nanotube-Nanowire Phase Change Memory 117
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices 117
Recommended Methods to Study Resistive Switching Devices 115
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 115
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 114
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime 114
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 114
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 113
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 113
Understanding Overreset Transition in Phase-ChangeMemory Characteristics 111
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks 111
Bipolar switching operation in phase change memory devices for high temperature retention 111
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 110
Analytical Modeling of Organic-Inorganic CH3 NH3 PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition 110
Solving matrix equations in one step with cross-point resistive arrays 110
Cell-to-Cell and Cycle-to-Cycle Retention Statistics in Phase-Change Memory Arrays 110
A study of hot-hole injection during programming drain disturb in Flash memories 109
Brain-Inspired Memristive Neural Networks for Unsupervised Learning 109
Random number generation by differential read of stochastic switching in spin-transfer torque memory 109
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 108
A new transient model for recovery and relaxation oscillations in phase change memories 108
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability 108
Bipolar switching in chalcogenide phase change memory 108
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 108
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 107
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications 107
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks 107
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 106
Energy Landscape Model of Conduction and Phase Transition in Phase Change Memories 106
Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses 106
Logic Computation in Phase Change Materials by Threshold and Memory Switching 106
Computing of temporal information in spiking neural networks with ReRAM synapses 106
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 105
A recombination- and trap-assisted tunneling model for stress-induced leakage current 105
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 105
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 105
Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories 105
Separation of electron and hole traps by transient current analysis 104
Pulse-induced crystallization in phase-change memories under set and disturb conditions 104
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 103
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses 103
Multiphysics modeling of PCM devices for scaling investigation 103
Modeling of threshold voltage drift in phase change memory (PCM) devices 103
Logic Computing with Stateful Neural Networks of Resistive Switches 102
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 101
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 101
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 101
Statistical analysis of nanocrystal memory reliability 101
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 100
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 100
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 100
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 100
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices 99
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 99
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 99
Voltage-controlled relaxation oscillations in phase-change memory devices 98
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 98
Size-dependent temperature instability in NiO–based resistive switching memory 98
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 98
Modeling resistance instabilities of set and reset states in phase change memory with Ge-rich GeSbTe 98
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 98
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 98
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 98
Resistance transition in metal oxides induced by electronic threshold switching 97
Recovery and drift dynamics of resistance and threshold voltages in phase-change memories 97
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells 97
Set/reset statistics and kinetics in phase change memory arrays 97
Different types of defects in silicon dioxide characterized by their transient behavior 96
Analysis and modeling of resistive switching statistics 96
"Status and challenges of PCM modeling" 95
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 95
Totale 12.591
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Categoria #
all - tutte 117.986
article - articoli 66.168
book - libri 208
conference - conferenze 44.683
curatela - curatele 270
other - altro 0
patent - brevetti 2.151
selected - selezionate 0
volume - volumi 4.506
Totale 235.972
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.018 0 0 0 0 0 0 956 674 874 467 661 386
2020/20214.723 429 293 585 358 531 310 269 334 303 479 282 550
2021/20223.390 177 402 260 222 407 172 207 183 179 212 358 611
2022/20234.354 491 315 276 390 556 518 41 359 758 209 324 117
2023/20242.497 122 418 129 189 141 298 172 168 59 398 101 302
2024/20253.400 90 148 191 185 1.909 824 53 0 0 0 0 0
Totale 31.964