RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

IELMINI, DANIELE
 Distribuzione geografica
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Continente #
NA - Nord America 19.339
EU - Europa 6.413
AS - Asia 1.625
AF - Africa 36
SA - Sud America 26
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 8
Totale 27.456
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Nazione #
US - Stati Uniti d'America 18.754
IT - Italia 1.600
AT - Austria 831
DE - Germania 759
UA - Ucraina 719
CA - Canada 577
CN - Cina 546
GB - Regno Unito 536
SE - Svezia 521
FI - Finlandia 488
VN - Vietnam 401
IE - Irlanda 307
FR - Francia 197
JO - Giordania 176
KR - Corea 131
ES - Italia 122
IN - India 77
BE - Belgio 65
JP - Giappone 64
NL - Olanda 64
HK - Hong Kong 60
TW - Taiwan 60
RU - Federazione Russa 44
SI - Slovenia 39
CH - Svizzera 33
SG - Singapore 33
GR - Grecia 26
BR - Brasile 19
IL - Israele 18
RO - Romania 15
TR - Turchia 14
CI - Costa d'Avorio 13
MU - Mauritius 13
PL - Polonia 9
EU - Europa 7
IR - Iran 7
SA - Arabia Saudita 7
BG - Bulgaria 6
CZ - Repubblica Ceca 6
LU - Lussemburgo 6
AU - Australia 5
DK - Danimarca 5
HU - Ungheria 5
IQ - Iraq 5
AR - Argentina 4
MX - Messico 4
PK - Pakistan 4
MY - Malesia 3
NZ - Nuova Zelanda 3
PH - Filippine 3
TH - Thailandia 3
ZA - Sudafrica 3
AP - ???statistics.table.value.countryCode.AP??? 2
AZ - Azerbaigian 2
EE - Estonia 2
EG - Egitto 2
KG - Kirghizistan 2
LI - Liechtenstein 2
MA - Marocco 2
MN - Mongolia 2
NP - Nepal 2
PR - Porto Rico 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
BY - Bielorussia 1
CY - Cipro 1
EC - Ecuador 1
GL - Groenlandia 1
ID - Indonesia 1
KW - Kuwait 1
KZ - Kazakistan 1
LT - Lituania 1
MD - Moldavia 1
NG - Nigeria 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
PY - Paraguay 1
RS - Serbia 1
Totale 27.456
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Città #
Fairfield 2.956
Woodbridge 1.934
Chandler 1.693
Ashburn 1.407
Houston 1.405
Wilmington 1.298
Seattle 1.241
Cambridge 1.022
Ann Arbor 935
Vienna 830
Dearborn 436
Jacksonville 434
Milan 394
Lawrence 372
Medford 354
Ottawa 339
Dublin 279
Beijing 224
Helsinki 220
Dong Ket 209
Montréal 203
Munich 187
Mcallen 185
San Diego 185
Amman 176
Des Moines 160
Málaga 103
New York 94
Norwalk 89
Redwood City 81
Redmond 79
Washington 72
Rome 65
Lucca 63
Shanghai 60
London 50
Menlo Park 45
Brussels 40
Amsterdam 35
Phoenix 33
Taipei 32
Wuhan 29
Duncan 25
Mountain View 24
Nanjing 24
Seoul 24
Bonndorf 21
Princeton 21
Livorno 20
Verona 20
Gif-sur-yvette 19
Singapore 19
Bologna 18
Zhengzhou 17
Boardman 16
Central 16
Chicago 16
Hefei 16
Aachen 15
Los Angeles 15
Busto Arsizio 14
Hong Kong 14
Indiana 14
San Jose 14
Abidjan 13
Kraainem 13
Pohang 13
Portland 13
Seongnam 13
Tokyo 13
Berlin 12
Central District 11
Frankfurt am Main 11
Fremont 11
Chongqing 10
Columbus 10
Edinburgh 10
Falls Church 10
Ferrara 10
Gunzenhausen 10
Hangzhou 10
Kunming 10
Miami 10
Auburn Hills 9
Cortenuova 9
Dresden 9
Groningen 9
Hounslow 9
Montreal 9
Santa Clara 9
Zurich 9
Bergamo 8
Brescia 8
Changchun 8
Hsinchu 8
Lanzhou 8
Madrid 8
Moscow 8
Nanchang 8
Nuremberg 8
Totale 20.807
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Nome #
Stochastic Memory Devices for Security and Computing 900
In-memory computing with resistive switching devices 378
Fast solution of linear systems with analog resistive switching memory (RRAM) 279
A Universal, Analog, In-Memory Computing Primitive for Linear Algebra Using Memristors 171
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 164
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 149
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 140
CIRCUITO DI RISOLUZIONE DI PROBLEMI MATEMATICI COMPRENDENTE ELEMENTI RESISTIVI 134
A Monte Carlo investigation of nanocrystal memory reliability 133
Assessment of threshold switching dynamics in phase-change chalcogenide memories 128
Synaptic realizations based on memristive devices 128
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 119
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 118
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks 117
Memristive and CMOS Devices for Neuromorphic Computing 116
A bio-inspired recurrent neural network with self-adaptive neurons and PCM synapses for solving reinforcement learning tasks 116
Self-Aligned Nanotube-Nanowire Phase Change Memory 114
Emerging neuromorphic devices 114
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 113
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity 113
Brain-inspired neuromorphic computing with phase change memory (PCM) synapses 113
Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5 111
A comparative study of characterization techniques for oxide reliability in Flash memories 110
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 110
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 109
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 109
Random telegraph signal noise in phase change memory devices 108
A Brain-Inspired Homeostatic Neuron Based on Phase-Change Memories for Efficient Neuromorphic Computing 108
Impact of thermoelectric effects on phase change memory characteristics 107
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 107
Recommended Methods to Study Resistive Switching Devices 106
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices 105
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks 105
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 104
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 104
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 103
A study of hot-hole injection during programming drain disturb in Flash memories 103
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 102
Random number generation by differential read of stochastic switching in spin-transfer torque memory 101
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 100
Understanding Overreset Transition in Phase-ChangeMemory Characteristics 100
Analytical Modeling of Organic-Inorganic CH3 NH3 PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition 100
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime 100
Cell-to-Cell and Cycle-to-Cycle Retention Statistics in Phase-Change Memory Arrays 100
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 99
A recombination- and trap-assisted tunneling model for stress-induced leakage current 99
A new transient model for recovery and relaxation oscillations in phase change memories 99
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability 99
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 99
Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories 99
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications 98
Solving matrix equations in one step with cross-point resistive arrays 98
Brain-Inspired Memristive Neural Networks for Unsupervised Learning 98
Logic Computation in Phase Change Materials by Threshold and Memory Switching 98
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 97
Bipolar switching in chalcogenide phase change memory 97
Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses 97
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 97
Statistical analysis of nanocrystal memory reliability 97
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 95
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 95
Energy Landscape Model of Conduction and Phase Transition in Phase Change Memories 95
Pulse-induced crystallization in phase-change memories under set and disturb conditions 95
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 95
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks 95
Separation of electron and hole traps by transient current analysis 94
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 94
Bipolar switching operation in phase change memory devices for high temperature retention 94
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 93
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 92
Different types of defects in silicon dioxide characterized by their transient behavior 92
Modeling of threshold voltage drift in phase change memory (PCM) devices 92
Voltage-controlled relaxation oscillations in phase-change memory devices 91
Multiphysics modeling of PCM devices for scaling investigation 91
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 91
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks 91
Recovery and drift dynamics of resistance and threshold voltages in phase-change memories 90
Size-dependent temperature instability in NiO–based resistive switching memory 90
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 90
Characterization of oxide trap energy by analysis of the SILC roll-off regime in Flash memories 90
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 90
Computing of temporal information in spiking neural networks with ReRAM synapses 90
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 90
"Status and challenges of PCM modeling" 89
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 89
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 89
Modeling resistance instabilities of set and reset states in phase change memory with Ge-rich GeSbTe 89
Resistive switching – from fundamental redox-processes to device applications 89
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 89
Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories 89
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 89
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices 88
Status and challenges of phase change memory modeling 88
Logic Computing with Stateful Neural Networks of Resistive Switches 88
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 88
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 88
Resistance transition in metal oxides induced by electronic threshold switching 87
Modeling the universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament growth 87
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 87
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells 87
Totale 11.455
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Categoria #
all - tutte 89.627
article - articoli 50.655
book - libri 162
conference - conferenze 33.775
curatela - curatele 215
other - altro 0
patent - brevetti 1.525
selected - selezionate 0
volume - volumi 3.295
Totale 179.254
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.392 0 0 0 0 0 0 0 0 0 562 964 866
2019/20207.253 435 421 148 521 855 866 953 672 871 466 659 386
2020/20214.709 427 292 584 358 529 309 268 333 302 478 281 548
2021/20223.383 177 399 260 222 407 172 206 183 179 212 357 609
2022/20234.344 490 315 275 389 554 516 41 359 756 208 324 117
2023/20241.861 121 418 129 189 141 298 172 168 59 166 0 0
Totale 27.835