RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

IELMINI, DANIELE
 Distribuzione geografica
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Continente #
NA - Nord America 33.990
EU - Europa 21.155
AS - Asia 14.806
SA - Sud America 2.623
AF - Africa 746
OC - Oceania 39
Continente sconosciuto - Info sul continente non disponibili 11
Totale 73.370
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Nazione #
US - Stati Uniti d'America 32.973
RU - Federazione Russa 7.618
IT - Italia 5.664
SG - Singapore 4.639
CN - Cina 3.810
BR - Brasile 2.202
VN - Vietnam 1.696
DE - Germania 1.214
JP - Giappone 1.210
GB - Regno Unito 1.025
KR - Corea 916
AT - Austria 906
FR - Francia 905
CA - Canada 796
UA - Ucraina 768
FI - Finlandia 716
HK - Hong Kong 616
SE - Svezia 570
NL - Olanda 538
MA - Marocco 441
IN - India 330
IE - Irlanda 328
ES - Italia 301
BD - Bangladesh 262
TW - Taiwan 226
JO - Giordania 202
ID - Indonesia 165
AR - Argentina 147
PL - Polonia 138
MX - Messico 115
ZA - Sudafrica 111
IQ - Iraq 110
TR - Turchia 92
BE - Belgio 86
EC - Ecuador 70
PH - Filippine 59
PK - Pakistan 57
SA - Arabia Saudita 57
UZ - Uzbekistan 55
CH - Svizzera 52
CO - Colombia 52
GR - Grecia 48
CI - Costa d'Avorio 45
VE - Venezuela 45
LT - Lituania 39
SI - Slovenia 39
IL - Israele 38
PY - Paraguay 29
AU - Australia 27
CZ - Repubblica Ceca 27
RO - Romania 27
MY - Malesia 26
EG - Egitto 25
AE - Emirati Arabi Uniti 24
CL - Cile 24
PE - Perù 24
TH - Thailandia 23
AZ - Azerbaigian 22
JM - Giamaica 22
NP - Nepal 20
TN - Tunisia 20
BJ - Benin 19
KG - Kirghizistan 16
KZ - Kazakistan 15
HU - Ungheria 14
KE - Kenya 14
MU - Mauritius 14
PT - Portogallo 14
UY - Uruguay 14
DK - Danimarca 13
DZ - Algeria 13
RS - Serbia 13
TT - Trinidad e Tobago 13
BG - Bulgaria 12
BO - Bolivia 12
BY - Bielorussia 12
CR - Costa Rica 12
LV - Lettonia 12
OM - Oman 12
AL - Albania 11
AM - Armenia 11
IR - Iran 11
LU - Lussemburgo 11
GE - Georgia 10
HN - Honduras 10
LK - Sri Lanka 10
SN - Senegal 9
DO - Repubblica Dominicana 8
LB - Libano 8
NZ - Nuova Zelanda 8
PS - Palestinian Territory 8
ET - Etiopia 7
EU - Europa 7
HR - Croazia 7
LA - Repubblica Popolare Democratica del Laos 7
PA - Panama 7
EE - Estonia 6
KW - Kuwait 6
SK - Slovacchia (Repubblica Slovacca) 6
TM - Turkmenistan 6
Totale 73.250
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Città #
Ashburn 4.143
Fairfield 2.969
Milan 2.911
Singapore 2.675
San Jose 2.518
Woodbridge 1.945
Santa Clara 1.869
Chandler 1.700
Houston 1.442
Wilmington 1.310
Seattle 1.262
Cambridge 1.032
Moscow 987
Ann Arbor 938
Vienna 874
Council Bluffs 751
Beijing 729
Seoul 726
The Dalles 636
Boardman 620
Toyonaka 575
Hefei 572
Tokyo 539
Los Angeles 522
Hong Kong 500
Jacksonville 440
Dearborn 437
Dallas 431
Ho Chi Minh City 405
Lauterbourg 402
Lawrence 374
Medford 355
Helsinki 353
Ottawa 345
Munich 308
Rome 307
North Charleston 301
Dublin 298
London 296
Hanoi 289
New York 285
Buffalo 276
Kenitra 249
Dong Ket 211
Montréal 203
Amman 201
Kent 197
San Diego 188
Mcallen 185
São Paulo 177
Des Moines 167
Taipei 165
Frankfurt am Main 160
Casablanca 156
Shanghai 134
Amsterdam 127
Las Vegas 121
Jakarta 116
Orem 111
Málaga 105
Warsaw 103
Washington 99
Chicago 92
Norwalk 90
Phoenix 89
Redwood City 81
Montreal 80
Redmond 79
Bologna 78
Rio de Janeiro 72
Guangzhou 71
Wuhan 69
Atlanta 68
Lucca 68
East Aurora 67
Tianjin 64
Chennai 59
Haiphong 59
Brasília 58
Johannesburg 58
Turin 58
Belo Horizonte 57
Brooklyn 57
Denver 57
Lappeenranta 56
Salamanca 56
Naples 55
Da Nang 54
Nuremberg 54
Brussels 51
Tashkent 49
Manchester 47
Abidjan 45
Menlo Park 45
Stockholm 45
Florence 44
Toronto 44
Hangzhou 43
Zhengzhou 43
Hillsboro 42
Totale 46.126
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Nome #
In-memory computing with resistive switching devices 1.540
Stochastic Memory Devices for Security and Computing 1.026
Fast solution of linear systems with analog resistive switching memory (RRAM) 530
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime 356
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 346
Recommended Methods to Study Resistive Switching Devices 341
A Universal, Analog, In-Memory Computing Primitive for Linear Algebra Using Memristors 338
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory 334
Random number generation by differential read of stochastic switching in spin-transfer torque memory 328
Data retention statistics and modelling in HfO2 resistive switching memories 325
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch 325
Redox memristors with volatile threshold switching behavior for neuromorphic computing 316
A recombination- and trap-assisted tunneling model for stress-induced leakage current 296
A recombination model for transient and stationary stress-induced leakage current 289
A Spiking Recurrent Neural Network with Phase Change Memory Synapses for Decision Making 289
A Generalized Block-Matrix Circuit for Closed-Loop Analog In-Memory Computing 275
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM" 273
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits 267
A Brain-Inspired Homeostatic Neuron Based on Phase-Change Memories for Efficient Neuromorphic Computing 267
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity 262
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 261
An Ultrafast (< 200 ns) Sparse Solution Solver made by HfWOx/VOy Threshold Tunable Neurons 249
A bio-inspired recurrent neural network with self-adaptive neurons and PCM synapses for solving reinforcement learning tasks 248
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks 247
A Monte Carlo investigation of nanocrystal memory reliability 247
Memristive and CMOS Devices for Neuromorphic Computing 246
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses 241
Synaptic realizations based on memristive devices 239
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 237
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 234
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity 233
Assessment of threshold switching dynamics in phase-change chalcogenide memories 227
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 225
CIRCUITO DI RISOLUZIONE DI PROBLEMI MATEMATICI COMPRENDENTE ELEMENTI RESISTIVI 225
Emerging neuromorphic devices 225
Hardware implementation of PCM-based neurons with self-regulating threshold for homeostatic scaling in unsupervised learning 225
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 224
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks 224
Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses 220
In-memory computing with emerging memory devices: Status and outlook 218
Impact of thermoelectric effects on phase change memory characteristics 217
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 216
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 216
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses 215
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 212
Logic Computing with Stateful Neural Networks of Resistive Switches 212
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 211
Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5 210
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 210
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 209
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 209
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 209
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 209
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses 209
2022 roadmap on neuromorphic computing and engineering 209
SISTEMI E METODO PER L’ESECUZIONE RAPIDA DI MOLTIPLICAZIONI TRA MATRICI 206
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability 206
Brain-inspired neuromorphic computing with phase change memory (PCM) synapses 206
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 205
Solving matrix equations in one step with cross-point resistive arrays 205
Computing of temporal information in spiking neural networks with ReRAM synapses 205
Cell-to-Cell and Cycle-to-Cycle Retention Statistics in Phase-Change Memory Arrays 204
Optimization Schemes for In-Memory Linear Regression Circuit With Memristor Arrays 204
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs 203
A comparative study of characterization techniques for oxide reliability in Flash memories 203
Random telegraph signal noise in phase change memory devices 203
Analytical Modeling of Organic-Inorganic CH3 NH3 PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition 202
Bipolar switching operation in phase change memory devices for high temperature retention 200
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 199
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 199
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 199
3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing 198
Device and method for generating radom numbers 198
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 198
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 197
Accelerated retention test method by controlling ion migration barrier of resistive random access memory 196
"Electrical characterization of anomalous cells in phase change memory arrays" 195
A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity 194
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 193
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 193
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 193
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks 193
"Status and challenges of PCM modeling" 192
Modeling of threshold voltage drift in phase change memory (PCM) devices 192
Multiphysics modeling of PCM devices for scaling investigation 191
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 190
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 190
A new transient model for recovery and relaxation oscillations in phase change memories 189
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 189
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks 189
Bipolar switching in chalcogenide phase change memory 188
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories 187
METHOD FOR ENROLLING A PHYSICALLY UNCLONABLE FUNCTION, PUF, CIRCUIT FOR CRYPTOGRAPHIC APPLICATIONS 186
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices 186
"Reliability issues and scaling projections for phase change non volatile memories" 186
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 186
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 186
Brain-Inspired Memristive Neural Networks for Unsupervised Learning 185
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 184
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 184
Totale 24.968
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Categoria #
all - tutte 209.062
article - articoli 116.435
book - libri 389
conference - conferenze 78.326
curatela - curatele 448
other - altro 0
patent - brevetti 5.269
selected - selezionate 0
volume - volumi 8.195
Totale 418.124
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.390 177 402 260 222 407 172 207 183 179 212 358 611
2022/20234.354 491 315 276 390 556 518 41 359 758 209 324 117
2023/20242.497 122 418 129 189 141 298 172 168 59 398 101 302
2024/20259.080 90 148 191 185 1.909 824 366 928 1.343 551 1.190 1.355
2025/202636.171 5.773 5.773 1.704 2.439 1.822 1.723 4.677 2.016 3.178 3.202 1.318 2.546
2026/202711 11 0 0 0 0 0 0 0 0 0 0 0
Totale 73.826