Resistive-switching random access memory (RRAM) based on Cu or Ag filament is a promising selector device for high-density crosspoint arrays. These devices display high ON-OFF ratio, volatile switching, high switching speed, and long endurance, supporting the adoption in large memory arrays. However, the mechanism of volatile switching is not clear yet, which prevents the development of compact models for circuit design and simulation. Based on an extensive study of the switching mechanism, we report an analytical model that captures all electrical characteristics of the device, including switching, recovery, and their dependence on the applied voltage. We use the analytical model to simulate the circuit-level behavior of the device as long/short term memory synapse.

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling

Wang W.;Laudato M.;Ambrosi E.;Bricalli A.;Covi E.;Ielmini D.
2019-01-01

Abstract

Resistive-switching random access memory (RRAM) based on Cu or Ag filament is a promising selector device for high-density crosspoint arrays. These devices display high ON-OFF ratio, volatile switching, high switching speed, and long endurance, supporting the adoption in large memory arrays. However, the mechanism of volatile switching is not clear yet, which prevents the development of compact models for circuit design and simulation. Based on an extensive study of the switching mechanism, we report an analytical model that captures all electrical characteristics of the device, including switching, recovery, and their dependence on the applied voltage. We use the analytical model to simulate the circuit-level behavior of the device as long/short term memory synapse.
2019
Analytical model; neuromorphic computing; retention time; selective device; volatile switching
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1111813
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