Perpendicular spin-transfer torque (p-STT) memory is attracting an increasing interest as storage class memory (SCM) or static/dynamic RAM replacement. In these applications, high speed and extended endurance are essential and sometimes conflicting requirements. This work addresses cycling endurance of p-STT devices by pulsed experiments and modeling of the dielectric breakdown. We present a new endurance model able to predict the STT endurance as a function of applied voltage, pulse width, pulse polarity and delay time. The trade-off between write time and endurance for RAM replacement is finally addressed.

Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory

Carboni, R.;Ambrogio, S.;Ielmini, D.
2016-01-01

Abstract

Perpendicular spin-transfer torque (p-STT) memory is attracting an increasing interest as storage class memory (SCM) or static/dynamic RAM replacement. In these applications, high speed and extended endurance are essential and sometimes conflicting requirements. This work addresses cycling endurance of p-STT devices by pulsed experiments and modeling of the dielectric breakdown. We present a new endurance model able to predict the STT endurance as a function of applied voltage, pulse width, pulse polarity and delay time. The trade-off between write time and endurance for RAM replacement is finally addressed.
Technical Digest - International Electron Devices Meeting, IEDM
9781509039012
Electronic, Optical and Magnetic Materials; Condensed Matter Physics; Materials Chemistry2506 Metals and Alloys; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1035665
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