Resistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for program operations and data retention stability. These two problems are here investigated from experimental and theoretical points of view to clarify the possibilities of NiO RRAMs to become a real competitive alternative to mainstream Flash technology.
Size-dependent temperature instability in NiO–based resistive switching memory
IELMINI, DANIELE;NARDI, FEDERICO;CAGLI, CARLO;LACAITA, ANDREA LEONARDO
2010-01-01
Abstract
Resistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for program operations and data retention stability. These two problems are here investigated from experimental and theoretical points of view to clarify the possibilities of NiO RRAMs to become a real competitive alternative to mainstream Flash technology.File in questo prodotto:
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