Resistive switching memory (RRAM) is among the most promising technologies for storage class memory (SCM) and embedded nonvolatile memory (eNVM). Feasibility of RRAM as SCM and/or embedded memory requires large on/off ratio, good endurance, high retention, and the availability of a robust select element for crossbar array integration. This work presents Ti/SiOx RRAM with high on/off ratio (>104), good endurance (>107), high uniformity and strong retention (260°C for 1 hour), thanks to the high SiOx band gap. Ag/SiOx devices show volatile switching with high on/off ratio (> 107) and bidirectional operation applicable to select devices in crossbar arrays.

SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio

Bricalli, A.;Ambrosi, E.;Laudato, M.;Ielmini, D.
2016

Abstract

Resistive switching memory (RRAM) is among the most promising technologies for storage class memory (SCM) and embedded nonvolatile memory (eNVM). Feasibility of RRAM as SCM and/or embedded memory requires large on/off ratio, good endurance, high retention, and the availability of a robust select element for crossbar array integration. This work presents Ti/SiOx RRAM with high on/off ratio (>104), good endurance (>107), high uniformity and strong retention (260°C for 1 hour), thanks to the high SiOx band gap. Ag/SiOx devices show volatile switching with high on/off ratio (> 107) and bidirectional operation applicable to select devices in crossbar arrays.
Technical Digest - International Electron Devices Meeting, IEDM
9781509039012
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/1035663
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