RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

FRIGERIO, JACOPO
 Distribuzione geografica
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Continente #
NA - Nord America 9.122
EU - Europa 2.375
AS - Asia 686
AF - Africa 27
OC - Oceania 6
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 12.226
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Nazione #
US - Stati Uniti d'America 8.978
IT - Italia 812
AT - Austria 344
CN - Cina 289
VN - Vietnam 268
ES - Italia 199
GB - Regno Unito 174
FI - Finlandia 168
SE - Svezia 167
DE - Germania 160
IE - Irlanda 152
CA - Canada 144
FR - Francia 42
GR - Grecia 41
UA - Ucraina 33
JP - Giappone 30
BE - Belgio 29
CH - Svizzera 23
NL - Olanda 23
KR - Corea 19
TR - Turchia 19
IN - India 18
MU - Mauritius 18
HK - Hong Kong 11
JO - Giordania 11
SG - Singapore 9
CI - Costa d'Avorio 8
TW - Taiwan 8
AU - Australia 5
BR - Brasile 5
EU - Europa 4
CZ - Repubblica Ceca 2
PL - Polonia 2
BG - Bulgaria 1
CY - Cipro 1
EG - Egitto 1
IR - Iran 1
LT - Lituania 1
LV - Lettonia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
RU - Federazione Russa 1
SA - Arabia Saudita 1
Totale 12.226
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Città #
Fairfield 1.543
Woodbridge 1.129
Wilmington 733
Ashburn 720
Houston 714
Ann Arbor 697
Seattle 618
Cambridge 540
Chandler 460
Vienna 338
Milan 261
Dearborn 212
Málaga 196
Lawrence 152
Beijing 143
Ottawa 137
Medford 135
Dublin 132
Dong Ket 118
Helsinki 99
San Diego 67
Norwalk 60
Auburn Hills 55
Redwood City 49
Lucca 42
Redmond 39
Des Moines 38
London 34
Leesburg 33
Jacksonville 31
Phoenix 30
Princeton 29
Rome 28
Brussels 25
Menlo Park 22
Washington 22
Shanghai 21
New York 20
Bern 19
Izmir 19
Columbus 18
Livorno 17
Dallas 15
Mountain View 14
Pisa 14
Amman 11
Hefei 10
Seregno 10
Kilburn 9
Lecco 9
Nanjing 9
Abidjan 8
Bresso 8
Groningen 8
Hong Kong 8
Indiana 8
Verona 8
Amsterdam 7
Kunming 7
Fremont 6
Guangzhou 6
Hangzhou 6
Hounslow 6
Seongnam 6
Wuhan 6
Albano Laziale 5
Atlanta 5
Chiswick 5
Fuzhou 5
Los Angeles 5
Nanchang 5
Portland 5
Seoul 5
Vimodrone 5
Ahlen 4
Brescia 4
Busto Arsizio 4
Changsha 4
Chicago 4
Falls Church 4
Glasgow 4
Hollywood 4
São Paulo 4
Taipei 4
Tong 4
Zhengzhou 4
Bergisch Gladbach 3
Berlin 3
Böblingen 3
Cornate D'adda 3
Englewood 3
Falkenstein 3
Frankfurt An Der Oder 3
Huntsville 3
Lake Forest 3
Lappeenranta 3
Longueuil 3
Marburg 3
Melbourne 3
Mumbai 3
Totale 10.129
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Nome #
Emission engineering in germanium nanoresonators 182
Group-IV midinfrared plasmonics 164
Spin-Hall Voltage over a Large Length Scale in Bulk Germanium 146
Analysis of Ge micro-cavities with in-plane tensile strains above 2% 140
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates 135
Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range 135
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 129
Electro-refraction in standard and symmetrically coupled Ge/SiGe quantum wells 125
Sharp bends and Mach-Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer 122
Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates 121
Strain in Si or Ge from the edge forces of epitaxial nanostructures 119
Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam 117
Low-loss Ge-rich Si0.2Ge0.8 waveguides for mid-infrared photonics 116
23 GHz Ge/SiGe multiple quantum well electro-absorption modulator 115
Functionalization of Scanning Probe Tips with Epitaxial Semiconductor Layers 115
Analysis of enhanced light emission from highly strained germanium microbridges 112
Optical Orientation and Inverse Spin Hall Effect as Effective Tools to Investigate Spin-Dependent Diffusion 111
Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates 111
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si 110
Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates 110
Emission engineering in germanium nanoresonators 108
1.55 µm electroluminescence from strained n-Ge quantum wells on silicon substrates 104
Ge/SiGe Superlattices for Nanostructured Thermoelectric Modules 104
Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells 103
N-Ge on Si for mid-infrared plasmonic sensors 102
Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics 99
Si/SiGe Nanoscale Engineered Thermoelectric Materials for Energy Harvesting 97
GaAs nanostructures on Si platform 97
Ge quantum-well waveguide modulator at 1.3μm 96
Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films 93
Ge-Rich Graded-Index SiGe Alloys: Exploring a Versatile Platform for mid-IR Photonics 93
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 93
High Extinction Ratio, Low Energy Ge Quantum Well Electro-Absorption Modulator with 23 GHz Bandwidth 93
Electro-refractive effect in Ge/SiGe multiple quantum wells 92
null 92
Plasmonic mid-infrared third harmonic generation in germanium nanoantennas 92
Excess carrier lifetimes in Ge layers on Si 91
Broadband integrated racetrack ring resonators for long-wave infrared photonics 90
Ge/SiGe asymmetric quantum wells for second harmonic generation in the mid-infrared 90
Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared 88
Advances towards the demonstration of a Ge/SiGe modulator integrated on SOI 88
Benchmarking the use of heavily-doped Ge against noble metals for plasmonics and sensing in the mid-infrared 88
Integrated germanium optical interconnects on silicon substrates 87
Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy 86
Mid-infrared sensing using heavily doped germanium plasmonics on silicon substrates 86
Lithographically defined low dimensional SiGe nanostripes as silicon stressors 86
On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 8.4 µm 85
Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared 85
High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells 84
Broadband single mode SiGe graded waveguides with tight mode confinement for mid-infrared photonics 84
GeSi photonics for telecommunication applications 83
Determining the directional strain shift coefficients for tensile Ge: A combined x-ray diffraction and Raman spectroscopy study 83
The thermoelectric properties of Ge/SiGe modulation doped superlattices 82
Refractive index change induced by quantum confined stark effect in Ge quantum wells 82
Germanium Nanoantennas for Plasmon-Enhanced Third Harmonic Generation in the Mid Infrared 82
Mid-infrared third-harmonic emission from heavily-doped germanium plasmonic nanoantennas 81
null 79
Ge/SiGe quantum well for photonic applications: Modelling of the quantum confined Stark effect 79
Silicon germanium on graded buffer as a new platform for optical interconnects on silicon 78
Giant electro-optic effect in Ge/SiGe coupled quantum wells 77
Broadband mid infrared photonic integrated components using a Ge-rich SiGe platform 77
Carrier lifetimes in uniaxially strained Ge micro bridges 77
Prospects for SiGe thermoelectric generators 76
O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning 76
Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon 76
Components for Integrated Ge on Si for Mid-Infrared Photonic Sensors 76
High quality SiGe waveguide platform for Ge photonics on bulk silicon substrates 76
Phase-shift in waveguide integrated Ge quantum wells 75
Quantum confined Stark effect electroabsorption modulator on a SOI platform 75
Heavily-doped germanium on silicon with activated doping exceeding 10^20cm^-3 as an alternative to gold for mid-infrared plasmonics 75
Graded SiGe waveguides with broadband low-loss propagation in the mid infrared 75
Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors 74
Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells 72
A compact Ge-rich graded-index SiGe platform with broadband low-loss propagation in the mid infrared 71
Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm 71
Mid-infrared intersubband absorption from p-Ge quantum wells on Si 70
Broadband Mid-IR On-Chip Fourier-Transform Spectrometer 70
Engineering large in-plane tensile strains in ge microdisks, microrings and racetrack optical cavities 70
Dispositivo sensore di radiazione elettromagnetica a doppio fotodiodo 70
Ge quantum well optoelectronic devices for light modulation, detection, and emission 69
Photoluminescence emission from a nanofabricated scanning probe tip made of epitaxial germanium 69
Vertical Germanium Nanowire Photodetectors with Suspended Graphene Top Contact 69
Ge/SiGe quantum well optical modulator 69
Time- and frequency-resolved electrodynamics of germanium nanoantennas for mid-infrared plasmonics 69
CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes 69
Intersubband absorption in p-Ge QWs on Si 68
Design of mid-IR integrated cavity based on Ge-rich graded SiGe waveguides 68
Ge/SiGe parabolic quantum wells 68
Si/SiGe Thermoelectric Generators 68
Optical interconnects based on Ge/SiGe multiple quantum well structures 67
Mid-infrared plasmonic platform based on heavily doped epitaxial Ge-on-Si: Retrieving the optical constants of thin Ge epilayers 67
Germanium-based integrated photonics from near- to mid-infrared applications 67
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 67
Strong quantum-confined Stark effect from light hole related direct-gap transitions in Ge quantum wells 66
Ge-rich silicon germanium as a new platform for optical interconnects on silicon 66
Ge quantum well plasmon-enhanced quantum confined Stark effect modulator 66
Mid-infrared n-Ge on Si plasmonic based microbolometer sensors 66
Ge/SiGe multiple quantum wells for photonic integrated circuits on silicon 65
Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides 64
Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells 64
Totale 8.930
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Categoria #
all - tutte 41.412
article - articoli 21.140
book - libri 0
conference - conferenze 19.630
curatela - curatele 0
other - altro 0
patent - brevetti 642
selected - selezionate 0
volume - volumi 0
Totale 82.824
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019903 0 0 0 0 0 0 0 0 0 0 469 434
2019/20203.658 224 177 88 289 393 491 464 346 434 347 242 163
2020/20211.737 151 133 80 76 129 92 93 104 151 239 155 334
2021/20221.365 21 89 119 130 148 86 53 134 104 104 162 215
2022/20231.443 186 112 59 85 119 151 24 119 185 225 98 80
2023/2024799 39 161 74 77 57 100 73 77 22 117 2 0
Totale 12.487