Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare.

1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

CECCHI, STEFANO CARLO;FRIGERIO, JACOPO;CHRASTINA, DANIEL;ISELLA, GIOVANNI
2012

Abstract

Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/694253
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