We are developing an all-semiconductor plasmonic platform for mid-infrared sensing which includes growth of epitaxial n-doped germanium films, spectroscopic test and electromagnetic design of plasmonic antennas. © 2013 IEEE.

Mid-infrared plasmonic antennas made of electron-doped epitaxial germanium-on-silicon

Frigerio, Jacopo;Isella, Giovanni;Finazzi, Marco;Biagioni, Paolo
2013-01-01

Abstract

We are developing an all-semiconductor plasmonic platform for mid-infrared sensing which includes growth of epitaxial n-doped germanium films, spectroscopic test and electromagnetic design of plasmonic antennas. © 2013 IEEE.
2013
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
9781467347174
Energy Engineering and Power Technology; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1038316
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