Components for mid-infrared chip-scale sensors are reviewed including loss measurements of Ge-on-Si waveguides between 8 and 10.5 μm wavelength. Third-harmonic generation is demonstrated using Ge nano-antennas. Such components are essential for a Ge-on-Si mid-infrared platform technology for healthcare, security and environmental sensing applications.
Components for Integrated Ge on Si for Mid-Infrared Photonic Sensors
Frigerio, Jacopo;Pellegrini, Giovanni;Isella, Giovanni;Biagioni, Paolo;
2018-01-01
Abstract
Components for mid-infrared chip-scale sensors are reviewed including loss measurements of Ge-on-Si waveguides between 8 and 10.5 μm wavelength. Third-harmonic generation is demonstrated using Ge nano-antennas. Such components are essential for a Ge-on-Si mid-infrared platform technology for healthcare, security and environmental sensing applications.File in questo prodotto:
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