The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor.
Mid-infrared n-Ge on Si plasmonic based microbolometer sensors
Frigerio, Jacopo;Ballabio, Andrea;Pellegrini, Giovanni;Isella, Giovanni;Biagioni, Paolo;
2017-01-01
Abstract
The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor.File in questo prodotto:
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