The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.

N-Ge on Si for mid-infrared plasmonic sensors

Frigerio, Jacopo;Ballabio, Andrea;Pellegrini, Giovanni;Isella, Giovanni;Biagioni, Paolo
2017-01-01

Abstract

The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.
2017
Summer Topicals Meeting Series, SUM 2017
9781509065707
Electrical and Electronic Engineering; Computer Networks and Communications; Hardware and Architecture; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1038323
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