The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.
N-Ge on Si for mid-infrared plasmonic sensors
Frigerio, Jacopo;Ballabio, Andrea;Pellegrini, Giovanni;Isella, Giovanni;Biagioni, Paolo
2017-01-01
Abstract
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.File in questo prodotto:
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