Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.

GaAs nanostructures on Si platform

Bietti, S.;Ballabio, A.;Isella, G.;Esposito, L.;Frigerio, J.;Fedorov, A.;
2015-01-01

Abstract

Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
2015
2015 Opto-Electronics and Communications Conference, OECC 2015
9781467379441
III-V Nanostructures; Molecular Beam Epitaxy; Silicon Integration; Single photon emission; Computer Networks and Communications; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1036471
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