We present an integrated electro-optical modulator based on a Schottky diode embedded in a graded-index SiGe waveguide, operating in a wide mid-IR range from 6.4 to 10.7 μm wavelength. A 1.3 dB absorption variation is reported, which is already compatible with onchip synchronous detection experiments.
Broadband mid-infrared integrated electro-optic modulator based on a Schottky diode embedded in a graded SiGe waveguide
Frigerio J.;Ballabio A.;Falcone V.;Isella G.;
2021-01-01
Abstract
We present an integrated electro-optical modulator based on a Schottky diode embedded in a graded-index SiGe waveguide, operating in a wide mid-IR range from 6.4 to 10.7 μm wavelength. A 1.3 dB absorption variation is reported, which is already compatible with onchip synchronous detection experiments.File in questo prodotto:
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