Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020cm-3which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.
Heavily-doped germanium on silicon with activated doping exceeding 10^20cm^-3 as an alternative to gold for mid-infrared plasmonics
Frigerio, Jacopo;Ballabio, Andrea;Pellegrini, G.;Biagioni, Paolo;Isella, Giovanni
2017-01-01
Abstract
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020cm-3which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.File in questo prodotto:
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