In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 1020 cm-3, allowing us to tune the plasma wavelength of Ge in the 3-15 µm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics.

Ge-on-Si based mid-infrared plasmonics

Frigerio J.;Pellegrini G.;Ballabio A.;Isella G.;Ortolani M.;Biagioni P.
2021

Abstract

In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 1020 cm-3, allowing us to tune the plasma wavelength of Ge in the 3-15 µm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics.
Proceedings of SPIE - The International Society for Optical Engineering
9781510642171
9781510642188
Doping
Germanium
Mid-infrared
Plasmonics
Sensing
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1208882
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