In this work we present model calculations and experimental verification of the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe asymmetric quantum wells in the mid-infrared. We develop a model for the valence band-structure of the SiGe alloy including heavy-hole, light-hole and split-off bands for any value of Ge concentration, so as to obtain heterojunction parameters for the calculation of the wavefunction of confined hole states in quantum wells.
Ge/SiGe asymmetric quantum wells for second harmonic generation in the mid-infrared
Frigerio J.;Ballabio A.;Isella G.;Ortolani M.
2019-01-01
Abstract
In this work we present model calculations and experimental verification of the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe asymmetric quantum wells in the mid-infrared. We develop a model for the valence band-structure of the SiGe alloy including heavy-hole, light-hole and split-off bands for any value of Ge concentration, so as to obtain heterojunction parameters for the calculation of the wavefunction of confined hole states in quantum wells.File in questo prodotto:
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