Quantum wells with parabolic confining potentials allow the realization of semiconductor heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here we report the attempt of attaining such parabolic quantum wells (PQWs) within the Ge/SiGe material platform. Multiple PQWs featuring different widths and composition have been epitaxially grown and characterized by means of high-resolution x-ray diffraction and scanning transmission electron microscopy. The compositional profile is seen to deviate slightly from an ideal parabola, but the quantum confined states are almost equally spaced within the valence and conduction band as indicated by photoreflectance measurements and k . p modelling.

Ge/SiGe parabolic quantum wells

Ballabio A.;Frigerio J.;Chrastina D.;Isella G.
2019-01-01

Abstract

Quantum wells with parabolic confining potentials allow the realization of semiconductor heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here we report the attempt of attaining such parabolic quantum wells (PQWs) within the Ge/SiGe material platform. Multiple PQWs featuring different widths and composition have been epitaxially grown and characterized by means of high-resolution x-ray diffraction and scanning transmission electron microscopy. The compositional profile is seen to deviate slightly from an ideal parabola, but the quantum confined states are almost equally spaced within the valence and conduction band as indicated by photoreflectance measurements and k . p modelling.
germanium; parabolic quantum wells; photoreflectance; quantitative STEM; silicon
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1113079
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