CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si
Bollani, M.;Frigerio, J.;Pellegrini, G.;Ballabio, A.;Isella, G.;Biagioni, P.
2016-01-01
Abstract
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.File in questo prodotto:
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