RICCI, SAVERIO

RICCI, SAVERIO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 17 di 17 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autori File
A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity 1-gen-2022 Ricci, SaverioHashemkhani, ShahinIelmini, Daniele +
A Hybrid Memristor/CMOS SNN for Implementing One-Shot Winner-Takes-All Training 1-gen-2022 Ricci, SaverioHashemkhani, ShahinIelmini, Daniele +
Changing the Electronic Polarizability of Monolayer MoS2 by Perylene-Based Seeding Promoters 1-gen-2020 Tummala P. P.Ricci S.Patel K. A.Bertini F.Sordan R.Nobili L. G.Bollani M.Lamperti A. +
Compact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences 1-gen-2023 Glukhov, A.Bridarolli, D.Ricci, S.Ielmini, D. +
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories 1-gen-2022 Ricci, SIelmini, DCovi, E +
Development of Crosspoint Memory Arrays for Neuromorphic Computing 1-gen-2024 Ricci, SaverioMannocci, PiergiulioFarronato, MatteoMilozzi, AlessandroIelmini, Daniele
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 1-gen-2022 Ricci, SMannocci, PFarronato, MHashemkhani, SIelmini, D
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks 1-gen-2021 Pedretti G.Ricci S.Hashemkhani S.Ielmini D. +
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 1-gen-2022 Farronato, MatteoRicci, SaverioCompagnoni, Christian MonzioIelmini, Daniele +
Memristive tonotopic mapping with volatile resistive switching memory devices 1-gen-2024 Milozzi, AlessandroRicci, SaverioIelmini, Daniele
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 1-gen-2022 Matteo FarronatoSaverio RicciShahin HashemkhaniAlessandro BricalliDaniele Ielmini +
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 1-gen-2020 Wei WangErika CoviAlessandro MilozziMatteo FarronatoSaverio RicciGiacomo PedrettiDaniele Ielmini +
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study 1-gen-2024 Porzani, M.Ricci, S.Farronato, M.Ielmini, D.
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling 1-gen-2024 Porzani, M.Carletti, F.Ricci, S.Farronato, M.Ielmini, D.
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 1-gen-2023 Farronato, MatteoMannocci, PiergiulioRicci, SaverioCompagnoni, Christian MonzioIelmini, Daniele +
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering 1-gen-2023 Ricci, SaverioBridarolli, DavideIelmini, Daniele +
Tunable synaptic working memory with volatile memristive devices 1-gen-2023 Ricci, SaverioIelmini, Daniele +