WANG, WEI

WANG, WEI  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 17 di 17 (tempo di esecuzione: 0.021 secondi).
Titolo Data di pubblicazione Autori File
Computing of temporal information in spiking neural networks with ReRAM synapses 1-gen-2019 Wang W.Pedretti G.Milo V.Carboni R.Ielmini D. +
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch 1-gen-2018 WANG, WEIIelmini, Daniele +
Integration and co-design of memristive devices and algorithms for artificial intelligence 1-gen-2020 Wei WangDaniele Ielmini +
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses 1-gen-2018 Wang, WeiPedretti, GiacomoMilo, ValerioCarboni, RobertoSpinelli, Alessandro SIelmini, Daniele +
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion 1-gen-2019 Wang W.Covi E.Ambrosi E.Ielmini D. +
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 1-gen-2020 Wei WangErika CoviAlessandro MilozziMatteo FarronatoSaverio RicciGiacomo PedrettiDaniele Ielmini +
Phase-change memories (PCM)-Experiments and modelling: General discussion 1-gen-2019 Ielmini D.Wang W. +
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 1-gen-2019 Wang W.Bricalli A.Laudato M.Ambrosi E.COVI, ERIKAIelmini D.
Solving matrix equations in one step with cross-point resistive arrays 1-gen-2019 Sun Z.Pedretti G.Ambrosi E.Bricalli A.Wang W.Ielmini D.
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 1-gen-2019 Wang W.Ambrosi E.Bricalli A.Laudato M.Sun Z.Ielmini D. +
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 1-gen-2021 Covi E.Wang W.Farronato M.Ambrosi E.Ielmini D. +
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 1-gen-2021 Wang W.Covi E.Ambrosi E.Milozzi A.Farronato M.Ielmini D. +
Synaptic and neuromorphic functions: General discussion 1-gen-2019 Ielmini D.Wang W. +
Valence change ReRAMs (VCM) - Experiments and modelling: General discussion 1-gen-2019 Ielmini D.Wang W. +
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling 1-gen-2019 Wang W.Laudato M.Ambrosi E.Bricalli A.Covi E.Ielmini D. +
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling 1-gen-2019 Wang W.Laudato M.Ambrosi E.Bricalli A.Covi E.Ielmini D. +
A volatile RRAM synapse for neuromorphic computing 1-gen-2019 Covi E.Ielmini D.Wang W.Stecconi T.Milo V.Bricalli A.Ambrosi E.Pedretti G. +