PORZANI, MATTEO
PORZANI, MATTEO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
3D vertical resistive random-access memory (3D-VRRAM) for analog in-memory computing
2025-01-01 Bridarolli, D.; Carletti, F.; Ricci, S.; Porzani, M.; Mannocci, P.; Farronato, M.; Ielmini, D.
Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks
2024-01-01 Lepri, N.; Glukhov, A.; Mannocci, P.; Porzani, M.; Ielmini, D.
Experimental and numerical demonstration of threshold voltage asymmetry and synaptic plasticity in MoS2 transistors
2026-01-01 Cuesta-Lopez, Juan; Farronato, Matteo; Porzani, Matteo; Marin, Enrique G.; Godoy, Andres; Ielmini, Daniele
Fully-Parallel 2-Terminal Update Scheme for Tensor Product in ECRAM Arrays
2025-01-01 Porzani, M.; Micheletti, L.; Porta, P.; Ricci, S.; Carletti, F.; Farronato, M.; Ielmini, D.
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study
2024-01-01 Porzani, M.; Ricci, S.; Farronato, M.; Ielmini, D.
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
2024-01-01 Porzani, M.; Carletti, F.; Ricci, S.; Farronato, M.; Ielmini, D.
Scaling of Nonvolatile Memory (NVM) Technologies for Storage and Computing in Edge AI
2026-01-01 Carletti, F.; Farronato, M.; Bondì, D.; Giangrasso, S.; Mannocci, P.; Micheletti, L.; Bridarolli, D.; Porzani, M.; Jastrzebski, J. A.; Panettieri, G.; Larelli, G.; Pittoni, L.; Hu, G.; Al Muktash, A.; Chen, L.; Sali, L.; Ielmini, D.
Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network
2024-01-01 Srikimkaew, Oradee; Ricci, Saverio; Porzani, Matteo; Dang, Thien Tan; Nakaoka, Yusuke; Usami, Yuki; Ielmini, Daniele; Tanaka, Hirofumi