BRICALLI, ALESSANDRO

BRICALLI, ALESSANDRO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 20 di 23 (tempo di esecuzione: 0.039 secondi).
Titolo Data di pubblicazione Autori File
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing 1-gen-2023 Bianchi, SCovi, EBricalli, AIelmini, D +
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks 1-gen-2020 I. Muñoz MartínS. BianchiE. CoviA. BricalliD. ielmini +
A volatile RRAM synapse for neuromorphic computing 1-gen-2019 Covi E.Ielmini D.Wang W.Stecconi T.Milo V.Bricalli A.Ambrosi E.Pedretti G. +
Combining accuracy and plasticity in convolutional neural networks based on resistive memory arrays for autonomous learning 1-gen-2021 Bianchi S.Covi E.Bricalli A.Ielmini D. +
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 1-gen-2019 Ambrosi E.Bricalli A.Laudato M.Ielmini D.
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 1-gen-2020 Sun, ZhongAmbrosi, EliaPedretti, GiacomoBricalli, AlessandroIelmini, Daniele
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 1-gen-2020 Sun Z.Pedretti G.Ambrosi E.Bricalli A.Ielmini D.
In‐Memory Eigenvector Computation in Time O (1) 1-gen-2020 Sun, ZhongPedretti, GiacomoAmbrosi, EliaBricalli, AlessandroIelmini, Daniele
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 1-gen-2019 POLINO, NICOLA FRANCESCOLaudato M.Ambrosi E.Bricalli A.Ielmini D.
Logic Computing with Stateful Neural Networks of Resistive Switches 1-gen-2018 Sun, ZhongAmbrosi, EliaBricalli, AlessandroIelmini, Daniele
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 1-gen-2022 Matteo FarronatoSaverio RicciShahin HashemkhaniAlessandro BricalliDaniele Ielmini +
One-step regression and classification with cross-point resistive memory arrays 1-gen-2020 Sun Z.Pedretti G.Bricalli A.Ielmini D.
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 1-gen-2019 Wang W.Bricalli A.Laudato M.Ambrosi E.COVI, ERIKAIelmini D.
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 1-gen-2017 Bricalli, AlessandroAmbrosi, EliaLaudato, MarioIelmini, Daniele +
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 1-gen-2018 BRICALLI, ALESSANDROAMBROSI, ELIALaudato, MarioIelmini, Daniele +
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 1-gen-2018 MILO, VALERIOPEDRETTI, GIACOMOLaudato, M.BRICALLI, ALESSANDROAMBROSI, ELIABIANCHI, STEFANOCHICCA, ELISABETTAIelmini, D.
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 1-gen-2018 Ielmini D.Bricalli A.Ambrosi E.Xia Q. +
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 1-gen-2016 Bricalli, A.Ambrosi, E.Laudato, M.Ielmini, D. +
Solving matrix equations in one step with cross-point resistive arrays 1-gen-2019 Sun Z.Pedretti G.Ambrosi E.Bricalli A.Wang W.Ielmini D.
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 1-gen-2019 Wang W.Ambrosi E.Bricalli A.Laudato M.Sun Z.Ielmini D. +