FARRONATO, MATTEO

FARRONATO, MATTEO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 14 di 14 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autori File
Development of Crosspoint Memory Arrays for Neuromorphic Computing 1-gen-2024 Ricci, SaverioMannocci, PiergiulioFarronato, MatteoMilozzi, AlessandroIelmini, Daniele
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 1-gen-2022 Ricci, SMannocci, PFarronato, MHashemkhani, SIelmini, D
Hybrid 2D-CMOS microchips for memristive applications 1-gen-2023 Milozzi, AlessandroFarronato, MatteoIelmini, Daniele +
In-Memory Computing for Machine Learning and Deep Learning 1-gen-2023 Lepri, N.Glukhov, A.Cattaneo, L.Farronato, M.Mannocci, P.Ielmini, D.
In-memory computing with emerging memory devices: Status and outlook 1-gen-2023 Mannocci, P.Farronato, M.Lepri, N.Cattaneo, L.Glukhov, A.Ielmini, D. +
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 1-gen-2022 Farronato, MatteoRicci, SaverioCompagnoni, Christian MonzioIelmini, Daniele +
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 1-gen-2022 Matteo FarronatoSaverio RicciShahin HashemkhaniAlessandro BricalliDaniele Ielmini +
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 1-gen-2020 Wei WangErika CoviAlessandro MilozziMatteo FarronatoSaverio RicciGiacomo PedrettiDaniele Ielmini +
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study 1-gen-2024 Porzani, M.Ricci, S.Farronato, M.Ielmini, D.
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling 1-gen-2024 Porzani, M.Carletti, F.Ricci, S.Farronato, M.Ielmini, D.
Redox memristors with volatile threshold switching behavior for neuromorphic computing 1-gen-2022 Wang, WeiCovi, ErikaFarronato, MatteoIelmini, Daniele +
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering 1-gen-2023 Farronato, MatteoMannocci, PiergiulioRicci, SaverioCompagnoni, Christian MonzioIelmini, Daniele +
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 1-gen-2021 Covi E.Wang W.Farronato M.Ambrosi E.Ielmini D. +
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 1-gen-2021 Wang W.Covi E.Ambrosi E.Milozzi A.Farronato M.Ielmini D. +