FARRONATO, MATTEO

FARRONATO, MATTEO  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Titolo Data di pubblicazione Autori File
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning 1-gen-2022 Ricci, SMannocci, PFarronato, MHashemkhani, SIelmini, D
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference 1-gen-2022 Farronato, MatteoRicci, SaverioCompagnoni, Christian MonzioIelmini, Daniele +
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration 1-gen-2022 Matteo FarronatoSaverio RicciShahin HashemkhaniAlessandro BricalliDaniele Ielmini +
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories 1-gen-2020 Wei WangErika CoviAlessandro MilozziMatteo FarronatoSaverio RicciGiacomo PedrettiDaniele Ielmini +
Redox memristors with volatile threshold switching behavior for neuromorphic computing 1-gen-2022 Wang, WeiCovi, ErikaFarronato, MatteoIelmini, Daniele +
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 1-gen-2021 Covi E.Wang W.Farronato M.Ambrosi E.Ielmini D. +
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 1-gen-2021 Wang W.Covi E.Ambrosi E.Milozzi A.Farronato M.Ielmini D. +