FARRONATO, MATTEO
FARRONATO, MATTEO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
3-D Crosspoint (3DXP) Memory Arrays With Subthreshold Operation for Low-Energy, High-Accuracy Neural Network Accelerators
2025-01-01 Carletti, F.; Farronato, M.; Hu, Giuseppe Yi Cheng; Lepri, N.; Tortorelli, I.; Pirovano, A.; Fantini, P.; Ielmini, D.
3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing
2025-01-01 Bridarolli, D.; Zucchelli, C.; Mannocci, P.; Ricci, S.; Farronato, M.; Pedretti, G.; Sun, Z.; Ielmini, D.
3D vertical resistive random-access memory (3D-VRRAM) for analog in-memory computing
2025-01-01 Bridarolli, D.; Carletti, F.; Ricci, S.; Porzani, M.; Mannocci, P.; Farronato, M.; Ielmini, D.
Bio-Inspired Computing with Emerging Devices: Bridging 2D Materials and Neuromorphic Architectures
2025-01-01 Farronato, M.; Mannocci, P.; Milozzi, A.; Monzio Compagnoni, C.; Ielmini, D.
Development of Crosspoint Memory Arrays for Neuromorphic Computing
2024-01-01 Ricci, Saverio; Mannocci, Piergiulio; Farronato, Matteo; Milozzi, Alessandro; Ielmini, Daniele
Emerging Materials and Computing Paradigms for Temporal Signal Analysis
2025-01-01 Zhang, Teng; Wozniak, Stanislaw; Syed, Ghazi Sarwat; Mannocci, Piergiulio; Farronato, Matteo; Ielmini, Daniele; Sebastian, Abu; Yang, Yuchao
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning
2022-01-01 Ricci, S; Mannocci, P; Farronato, M; Hashemkhani, S; Ielmini, D
Fully-Parallel 2-Terminal Update Scheme for Tensor Product in ECRAM Arrays
2025-01-01 Porzani, M.; Micheletti, L.; Porta, P.; Ricci, S.; Carletti, F.; Farronato, M.; Ielmini, D.
High-Accuracy, High-Performance In-Memory Computing With High-Resistance Spin-Orbit Torque (SOT) Magnetic Memory
2025-01-01 Carletti, F.; Song, M. Y.; Ambrosi, E.; Hu, C. Y.; Hsu, C. F.; Mannocci, P.; Chen, G. L.; Wang, I. J.; Chen, K. M.; Hsin, Y. C.; Farronato, M.; Bao, X. Y.; Ielmini, D.
High-Density Multilevel 3D Vertical Resistive Switching Memory (VRRAM) for Massively Parallel in-Memory Computing
2024-01-01 Bridarolli, D.; Zucchelli, C.; Mannocci, P.; Ricci, S.; Farronato, M.; Pedretti, G.; Sun, Z.; Ielmini, D.
Hybrid 2D-CMOS microchips for memristive applications
2023-01-01 Zhu, Kaichen; Pazos, Sebastian; Aguirre, Fernando; Shen, Yaqing; Yuan, Yue; Zheng, Wenwen; Alharbi, Osamah; Villena, Marco A; Fang, Bin; Li, Xinyi; Milozzi, Alessandro; Farronato, Matteo; Muñoz-Rojo, Miguel; Wang, Tao; Li, Ren; Fariborzi, Hossein; Roldan, Juan B; Benstetter, Guenther; Zhang, Xixiang; Alshareef, Husam N; Grasser, Tibor; Wu, Huaqiang; Ielmini, Daniele; Lanza, Mario
In-Memory Computing for Machine Learning and Deep Learning
2023-01-01 Lepri, N.; Glukhov, A.; Cattaneo, L.; Farronato, M.; Mannocci, P.; Ielmini, D.
In-memory computing with emerging memory devices: Status and outlook
2023-01-01 Mannocci, P.; Farronato, M.; Lepri, N.; Cattaneo, L.; Glukhov, A.; Sun, Z.; Ielmini, D.
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference
2022-01-01 Farronato, Matteo; Melegari, Margherita; Ricci, Saverio; Hashemkani, Shahin; Compagnoni, Christian Monzio; Ielmini, Daniele
Low-energy, high-accuracy convolutional network inference in 3D crosspoint (3DXP) arrays
2024-01-01 Carletti, F.; Farronato, M.; Lepri, N.; Tortorelli, I.; Pirovano, A.; Fantini, P.; Ielmini, D.
MEMORY ARCHITECTURES WITH AMBIPOLAR SEMICONDUCTOR CHANNELS
2024-01-01 Ielmini, Daniele; Farronato, Matteo
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration
2022-01-01 Farronato, Matteo; Melegari, Margherita; Ricci, Saverio; Hashemkhani, Shahin; Bricalli, Alessandro; Ielmini, Daniele
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories
2020-01-01 Wang, Wei; Covi, Erika; Milozzi, Alessandro; Farronato, Matteo; Ricci, Saverio; Sbandati, Caterina; Pedretti, Giacomo; Ielmini, Daniele
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study
2024-01-01 Porzani, M.; Ricci, S.; Farronato, M.; Ielmini, D.
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
2024-01-01 Porzani, M.; Carletti, F.; Ricci, S.; Farronato, M.; Ielmini, D.