RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

BALATTI, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 3.480
EU - Europa 1.748
AS - Asia 1.182
SA - Sud America 240
AF - Africa 63
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.716
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Nazione #
US - Stati Uniti d'America 3.408
RU - Federazione Russa 780
SG - Singapore 415
CN - Cina 306
IT - Italia 281
BR - Brasile 205
AT - Austria 189
VN - Vietnam 157
GB - Regno Unito 91
FR - Francia 76
FI - Finlandia 64
DE - Germania 62
KR - Corea 62
CA - Canada 55
MA - Marocco 41
JP - Giappone 39
NL - Olanda 34
SE - Svezia 33
UA - Ucraina 33
HK - Hong Kong 31
IN - India 30
IE - Irlanda 26
ES - Italia 22
JO - Giordania 20
ID - Indonesia 19
TW - Taiwan 18
PL - Polonia 17
BD - Bangladesh 14
AR - Argentina 13
ZA - Sudafrica 13
IQ - Iraq 12
MX - Messico 8
MY - Malesia 8
SI - Slovenia 8
TR - Turchia 8
AE - Emirati Arabi Uniti 7
EC - Ecuador 7
VE - Venezuela 7
CH - Svizzera 6
BE - Belgio 5
UZ - Uzbekistan 5
DK - Danimarca 4
GR - Grecia 4
MU - Mauritius 4
BY - Bielorussia 3
CO - Colombia 3
IL - Israele 3
PH - Filippine 3
AM - Armenia 2
CL - Cile 2
CZ - Repubblica Ceca 2
HN - Honduras 2
IR - Iran 2
LT - Lituania 2
NG - Nigeria 2
NP - Nepal 2
OM - Oman 2
PE - Perù 2
PK - Pakistan 2
RO - Romania 2
TH - Thailandia 2
TJ - Tagikistan 2
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BW - Botswana 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GE - Georgia 1
HU - Ungheria 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
LB - Libano 1
LC - Santa Lucia 1
LK - Sri Lanka 1
NI - Nicaragua 1
NO - Norvegia 1
PF - Polinesia Francese 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
RS - Serbia 1
SA - Arabia Saudita 1
SY - Repubblica araba siriana 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
Totale 6.716
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Città #
Fairfield 371
Ashburn 344
Santa Clara 247
Singapore 230
Woodbridge 218
San Jose 209
Chandler 199
Vienna 191
Houston 172
Wilmington 162
Ann Arbor 149
Seattle 145
Cambridge 135
Milan 120
Beijing 97
Dearborn 91
Moscow 91
Council Bluffs 79
The Dalles 56
Boardman 46
Lawrence 44
Medford 44
Seoul 44
London 43
Lauterbourg 42
Ottawa 37
Des Moines 33
Kenitra 33
Tokyo 33
Los Angeles 31
Dong Ket 29
Ho Chi Minh City 29
Washington 26
Dublin 25
Hanoi 21
Helsinki 21
Las Vegas 21
Lucca 21
Amman 20
Hong Kong 20
San Diego 19
Buffalo 17
Jacksonville 17
Kent 17
North Charleston 17
Amsterdam 16
Hefei 16
Shanghai 16
Taipei 15
Jakarta 14
Phoenix 14
São Paulo 14
Warsaw 14
New York 13
Badalona 12
Frankfurt am Main 11
Chennai 10
Haiphong 10
Orem 10
Dallas 9
Redwood City 9
Chicago 8
Norwalk 8
Rio de Janeiro 8
Rome 8
Sepang 8
Austin 6
Boydton 6
Brasília 6
Changchun 6
Guangzhou 6
Munich 6
Baghdad 5
Belo Horizonte 5
Chongqing 5
Dhaka 5
Girona 5
Guayaquil 5
Montreal 5
Pistoia 5
Tashkent 5
Zhengzhou 5
Biên Hòa 4
Cape Town 4
Curitiba 4
Johannesburg 4
Kilburn 4
Livorno 4
Nanjing 4
Redondo Beach 4
Reston 4
San Donato Milanese 4
Xi'an 4
Atlanta 3
Brantford 3
Brooklyn 3
Brussels 3
Buenos Aires 3
Casablanca 3
Chengdu 3
Totale 4.450
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Nome #
Data retention statistics and modelling in HfO2 resistive switching memories 262
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 231
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 226
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 204
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 203
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 192
Device and method for generating radom numbers 192
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 189
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 189
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 181
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 177
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 176
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 175
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 169
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 155
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 153
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 151
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 151
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 146
True random number generation by variability of resistive switching in oxide-based devices 146
Statistical modeling of program and read variability in resistive switching devices 145
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 143
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 140
Dispositivo e metodo per generare numeri casuali 138
Ion migration model for resistive switching in transition metal oxides 137
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 136
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM 135
Understanding pulsed-cycling variability and endurance in HfOx RRAM 135
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 132
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 130
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 128
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 128
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 126
Variability and cycling endurance in nanoscale resistive switching memory 123
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 122
Understanding switching variability and random telegraph noise in resistive RAM 120
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 120
Filament evolution during resistive switching in oxide RRAM 120
Normally-off logic based on resistive switches - Part I: Logic gates 118
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 114
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 110
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 106
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 96
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 96
Stress-induced asymmetric switching and filament instability in electrochemical memories 87
Totale 6.753
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Categoria #
all - tutte 20.603
article - articoli 11.091
book - libri 0
conference - conferenze 7.948
curatela - curatele 0
other - altro 0
patent - brevetti 1.163
selected - selezionate 0
volume - volumi 401
Totale 41.206
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021137 0 0 0 0 0 0 0 0 0 43 24 70
2021/2022340 18 35 32 12 35 14 19 27 19 17 30 82
2022/2023462 51 46 20 42 57 70 4 35 93 10 24 10
2023/2024193 17 34 4 8 2 10 7 6 0 62 4 39
2024/2025864 2 15 21 8 254 75 33 89 121 42 101 103
2025/20262.702 510 572 108 206 122 177 361 169 201 276 0 0
Totale 6.753