BALATTI, SIMONE
 Distribuzione geografica
Continente #
NA - Nord America 2.302
EU - Europa 637
AS - Asia 207
AF - Africa 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.151
Nazione #
US - Stati Uniti d'America 2.264
AT - Austria 186
IT - Italia 183
CN - Cina 75
FI - Finlandia 55
VN - Vietnam 51
DE - Germania 39
CA - Canada 38
SG - Singapore 37
GB - Regno Unito 35
SE - Svezia 30
IE - Irlanda 26
UA - Ucraina 22
RU - Federazione Russa 19
JO - Giordania 18
FR - Francia 14
KR - Corea 12
SI - Slovenia 8
NL - Olanda 7
IN - India 4
JP - Giappone 4
MU - Mauritius 4
TW - Taiwan 4
BE - Belgio 3
GR - Grecia 3
CH - Svizzera 2
PL - Polonia 2
DK - Danimarca 1
ES - Italia 1
EU - Europa 1
HK - Hong Kong 1
IR - Iran 1
RO - Romania 1
Totale 3.151
Città #
Fairfield 371
Woodbridge 218
Chandler 199
Vienna 189
Houston 170
Ashburn 168
Wilmington 162
Ann Arbor 149
Seattle 143
Cambridge 135
Dearborn 91
Lawrence 44
Medford 44
Beijing 38
Ottawa 37
Des Moines 33
Dong Ket 29
Milan 28
Dublin 25
Lucca 21
Singapore 21
San Diego 19
Amman 18
Jacksonville 17
Washington 16
Helsinki 14
Phoenix 12
Redwood City 9
Norwalk 8
Rome 7
San Jose 7
Amsterdam 6
Changchun 6
London 6
Shanghai 6
Austin 5
Hefei 5
Pistoia 5
Kilburn 4
Las Vegas 4
Livorno 4
San Donato Milanese 4
Brussels 3
Daejeon 3
Nanjing 3
Auburn Hills 2
Broken Arrow 2
Busto Arsizio 2
Changsha 2
Chongqing 2
Dalmine 2
Guangzhou 2
Kunming 2
Lappeenranta 2
Marcianise 2
Mountain View 2
Newark 2
Redmond 2
Taipei 2
Treviglio 2
Aachen 1
Acton 1
Alameda 1
Bad Bellingen 1
Barcelona 1
Berlin 1
Bhubaneswar 1
Bonndorf 1
Central 1
Chengdu 1
Chennai 1
Chicago 1
Cleveland 1
Duncan 1
Edinburgh 1
Ferrara 1
Forest City 1
Formello 1
Gif-sur-yvette 1
Horia 1
Lanzhou 1
Moscow 1
Nanchang 1
New York 1
Nizhniy Novgorod 1
Padova 1
Pavia 1
Pisa 1
Polska 1
Portland 1
Prescot 1
Salerno 1
Santa Clara 1
Shenyang 1
Shenzhen 1
St Petersburg 1
Taichung 1
Tronville 1
Tulsa 1
Vejle 1
Totale 2.576
Nome #
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 121
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 112
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 105
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 97
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 93
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 92
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 92
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 91
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 91
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 90
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 89
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 89
True random number generation by variability of resistive switching in oxide-based devices 87
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 83
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM 82
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 82
Data retention statistics and modelling in HfO2 resistive switching memories 78
Understanding pulsed-cycling variability and endurance in HfOx RRAM 75
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 73
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 71
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 70
Statistical modeling of program and read variability in resistive switching devices 69
Device and method for generating radom numbers 69
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 68
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 67
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 67
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 64
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 62
Understanding switching variability and random telegraph noise in resistive RAM 60
Variability and cycling endurance in nanoscale resistive switching memory 60
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 59
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 58
Normally-off logic based on resistive switches - Part I: Logic gates 58
Ion migration model for resistive switching in transition metal oxides 57
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 53
Filament evolution during resistive switching in oxide RRAM 53
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 52
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 51
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 50
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 48
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 45
Dispositivo e metodo per generare numeri casuali 42
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 41
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 36
Stress-induced asymmetric switching and filament instability in electrochemical memories 36
Totale 3.188
Categoria #
all - tutte 10.953
article - articoli 6.059
book - libri 0
conference - conferenze 4.186
curatela - curatele 0
other - altro 0
patent - brevetti 478
selected - selezionate 0
volume - volumi 230
Totale 21.906


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020897 61 58 22 79 108 117 108 89 90 61 67 37
2020/2021327 32 19 23 12 20 21 15 22 26 43 24 70
2021/2022340 18 35 32 12 35 14 19 27 19 17 30 82
2022/2023462 51 46 20 42 57 70 4 35 93 10 24 10
2023/2024193 17 34 4 8 2 10 7 6 0 62 4 39
2024/20251 1 0 0 0 0 0 0 0 0 0 0 0
Totale 3.188