RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

BALATTI, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 2.994
EU - Europa 1.555
AS - Asia 770
SA - Sud America 227
AF - Africa 28
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 5.576
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Nazione #
US - Stati Uniti d'America 2.937
RU - Federazione Russa 778
SG - Singapore 294
CN - Cina 233
BR - Brasile 196
AT - Austria 189
IT - Italia 187
VN - Vietnam 89
GB - Regno Unito 82
FI - Finlandia 58
DE - Germania 57
CA - Canada 45
UA - Ucraina 33
NL - Olanda 32
SE - Svezia 31
FR - Francia 26
IE - Irlanda 26
IN - India 20
JO - Giordania 18
ES - Italia 16
ID - Indonesia 16
KR - Corea 14
AR - Argentina 13
BD - Bangladesh 12
ZA - Sudafrica 12
HK - Hong Kong 11
IQ - Iraq 8
MA - Marocco 8
MY - Malesia 8
PL - Polonia 8
SI - Slovenia 8
AE - Emirati Arabi Uniti 7
EC - Ecuador 6
VE - Venezuela 6
JP - Giappone 5
MX - Messico 5
UZ - Uzbekistan 5
BE - Belgio 4
DK - Danimarca 4
MU - Mauritius 4
TW - Taiwan 4
BY - Bielorussia 3
CH - Svizzera 3
GR - Grecia 3
TR - Turchia 3
AM - Armenia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
HN - Honduras 2
IL - Israele 2
IR - Iran 2
NG - Nigeria 2
NP - Nepal 2
OM - Oman 2
PE - Perù 2
PH - Filippine 2
TJ - Tagikistan 2
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
BW - Botswana 1
CL - Cile 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GE - Georgia 1
HU - Ungheria 1
JM - Giamaica 1
KG - Kirghizistan 1
LB - Libano 1
LC - Santa Lucia 1
LK - Sri Lanka 1
NI - Nicaragua 1
NO - Norvegia 1
PF - Polinesia Francese 1
PK - Pakistan 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
Totale 5.576
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Città #
Fairfield 371
Ashburn 302
Santa Clara 242
Woodbridge 218
Chandler 199
Vienna 191
Singapore 175
Houston 170
Wilmington 162
Ann Arbor 149
Seattle 145
Cambridge 135
Beijing 91
Dearborn 91
Moscow 91
Boardman 46
Council Bluffs 44
Lawrence 44
Medford 44
London 42
Ottawa 37
Des Moines 33
Milan 30
Dong Ket 29
Dublin 25
Los Angeles 24
Lucca 21
San Diego 19
Amman 18
Buffalo 17
Ho Chi Minh City 17
Jacksonville 17
Kent 17
Hefei 16
Helsinki 16
Washington 16
Amsterdam 14
Jakarta 14
Phoenix 12
São Paulo 12
Hong Kong 9
Redwood City 9
Shanghai 9
Dallas 8
Frankfurt am Main 8
New York 8
Norwalk 8
Rio de Janeiro 8
Rome 8
Sepang 8
The Dalles 8
Chicago 7
San Jose 7
Austin 6
Badalona 6
Brasília 6
Changchun 6
Hanoi 6
Munich 6
Belo Horizonte 5
Dhaka 5
Girona 5
Haiphong 5
Pistoia 5
Tashkent 5
Warsaw 5
Chennai 4
Chongqing 4
Curitiba 4
Guayaquil 4
Johannesburg 4
Kilburn 4
Las Vegas 4
Livorno 4
Nanjing 4
Redondo Beach 4
San Donato Milanese 4
Zhengzhou 4
Atlanta 3
Biên Hòa 3
Brooklyn 3
Brussels 3
Buenos Aires 3
Cape Town 3
Casablanca 3
Chengdu 3
Daejeon 3
Erbil 3
Guangzhou 3
Jundiaí 3
Kunming 3
Maracaibo 3
Marrakesh 3
Montreal 3
Mumbai 3
New Delhi 3
Newark 3
Pelotas 3
Santa Maria 3
Aparecida de Goiânia 2
Totale 3.645
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Nome #
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 198
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 194
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 165
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 160
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 158
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 157
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 156
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 156
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 155
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 152
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 152
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 151
Data retention statistics and modelling in HfO2 resistive switching memories 151
Device and method for generating radom numbers 147
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 136
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 133
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 133
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 127
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 126
Statistical modeling of program and read variability in resistive switching devices 125
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM 123
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 123
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 122
True random number generation by variability of resistive switching in oxide-based devices 121
Ion migration model for resistive switching in transition metal oxides 119
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 116
Understanding pulsed-cycling variability and endurance in HfOx RRAM 115
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 112
Filament evolution during resistive switching in oxide RRAM 109
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 109
Dispositivo e metodo per generare numeri casuali 109
Variability and cycling endurance in nanoscale resistive switching memory 107
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 106
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 105
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 104
Understanding switching variability and random telegraph noise in resistive RAM 103
Normally-off logic based on resistive switches - Part I: Logic gates 99
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 98
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 97
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 95
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 88
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 86
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 74
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 72
Stress-induced asymmetric switching and filament instability in electrochemical memories 69
Totale 5.613
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Categoria #
all - tutte 18.638
article - articoli 10.063
book - libri 0
conference - conferenze 7.196
curatela - curatele 0
other - altro 0
patent - brevetti 1.010
selected - selezionate 0
volume - volumi 369
Totale 37.276
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021221 0 0 0 0 0 21 15 22 26 43 24 70
2021/2022340 18 35 32 12 35 14 19 27 19 17 30 82
2022/2023462 51 46 20 42 57 70 4 35 93 10 24 10
2023/2024193 17 34 4 8 2 10 7 6 0 62 4 39
2024/2025864 2 15 21 8 254 75 33 89 121 42 101 103
2025/20261.562 510 572 108 206 122 44 0 0 0 0 0 0
Totale 5.613