RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

BALATTI, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 3.759
EU - Europa 1.993
AS - Asia 1.213
SA - Sud America 250
AF - Africa 63
Continente sconosciuto - Info sul continente non disponibili 38
OC - Oceania 2
Totale 7.318
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Nazione #
US - Stati Uniti d'America 3.672
RU - Federazione Russa 780
IT - Italia 524
SG - Singapore 418
CN - Cina 309
BR - Brasile 211
AT - Austria 189
VN - Vietnam 168
GB - Regno Unito 91
FR - Francia 76
CA - Canada 64
FI - Finlandia 64
DE - Germania 63
KR - Corea 62
MA - Marocco 41
JP - Giappone 40
NL - Olanda 34
SE - Svezia 33
UA - Ucraina 33
IN - India 32
HK - Hong Kong 31
TW - Taiwan 27
IE - Irlanda 26
ES - Italia 22
JO - Giordania 20
ID - Indonesia 19
PL - Polonia 17
BD - Bangladesh 15
AR - Argentina 13
ZA - Sudafrica 13
IQ - Iraq 12
MX - Messico 10
EC - Ecuador 9
MY - Malesia 8
SI - Slovenia 8
TR - Turchia 8
AE - Emirati Arabi Uniti 7
VE - Venezuela 7
CH - Svizzera 6
BE - Belgio 5
UZ - Uzbekistan 5
DK - Danimarca 4
GR - Grecia 4
MU - Mauritius 4
BY - Bielorussia 3
CO - Colombia 3
IL - Israele 3
JM - Giamaica 3
LT - Lituania 3
PE - Perù 3
PH - Filippine 3
AM - Armenia 2
CL - Cile 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
HN - Honduras 2
IR - Iran 2
NG - Nigeria 2
NP - Nepal 2
OM - Oman 2
PK - Pakistan 2
RO - Romania 2
TH - Thailandia 2
TJ - Tagikistan 2
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BW - Botswana 1
BZ - Belize 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GE - Georgia 1
HU - Ungheria 1
KE - Kenya 1
KG - Kirghizistan 1
LB - Libano 1
LC - Santa Lucia 1
LK - Sri Lanka 1
NI - Nicaragua 1
NO - Norvegia 1
PF - Polinesia Francese 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SY - Repubblica araba siriana 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 7.281
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Città #
Ashburn 380
Fairfield 371
Santa Clara 254
Milan 251
San Jose 240
Singapore 232
Woodbridge 218
Chandler 199
Vienna 191
Houston 172
Wilmington 162
Ann Arbor 149
Seattle 149
Cambridge 136
Council Bluffs 120
Beijing 99
Dearborn 91
Moscow 91
Boardman 70
The Dalles 56
Lawrence 44
Medford 44
Seoul 44
London 43
Lauterbourg 42
Los Angeles 37
Ottawa 37
Des Moines 33
Ho Chi Minh City 33
Kenitra 33
Tokyo 33
Rome 31
Dong Ket 29
Washington 27
Dublin 26
Hanoi 25
Las Vegas 22
Lucca 22
Helsinki 21
Phoenix 21
Amman 20
Hong Kong 20
San Diego 19
Buffalo 18
Jacksonville 17
Kent 17
North Charleston 17
Amsterdam 16
Hefei 16
Shanghai 16
New York 15
Taipei 15
Dallas 14
Jakarta 14
São Paulo 14
Warsaw 14
Badalona 12
Frankfurt am Main 11
Orem 11
Chennai 10
Haiphong 10
Bologna 9
Chicago 9
Norwalk 9
Redwood City 9
Zhongli District 9
Rio de Janeiro 8
Sepang 8
Austin 7
Framingham 7
Atlanta 6
Boydton 6
Brasília 6
Changchun 6
Guangzhou 6
Montreal 6
Munich 6
Baghdad 5
Belo Horizonte 5
Chongqing 5
Dhaka 5
Girona 5
Guayaquil 5
Naples 5
Pistoia 5
Pittsburgh 5
Tashkent 5
Zhengzhou 5
Biên Hòa 4
Brooklyn 4
Cape Town 4
Curitiba 4
Johannesburg 4
Kilburn 4
Livorno 4
Nanjing 4
Palermo 4
Redondo Beach 4
Reston 4
San Donato Milanese 4
Totale 4.814
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Nome #
Data retention statistics and modelling in HfO2 resistive switching memories 346
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 245
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 238
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 225
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 223
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 215
Device and method for generating radom numbers 205
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 203
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 200
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 198
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 192
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 190
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 190
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 175
True random number generation by variability of resistive switching in oxide-based devices 171
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 166
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 164
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 163
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 161
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 154
Ion migration model for resistive switching in transition metal oxides 154
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 154
Statistical modeling of program and read variability in resistive switching devices 149
Dispositivo e metodo per generare numeri casuali 149
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 147
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 146
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 142
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 142
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 141
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM 140
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 140
Understanding pulsed-cycling variability and endurance in HfOx RRAM 139
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 134
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 129
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 128
Filament evolution during resistive switching in oxide RRAM 127
Normally-off logic based on resistive switches - Part I: Logic gates 127
Variability and cycling endurance in nanoscale resistive switching memory 127
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 126
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 125
Understanding switching variability and random telegraph noise in resistive RAM 124
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 114
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 101
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 98
Stress-induced asymmetric switching and filament instability in electrochemical memories 91
Totale 7.318
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Categoria #
all - tutte 22.691
article - articoli 12.206
book - libri 0
conference - conferenze 8.745
curatela - curatele 0
other - altro 0
patent - brevetti 1.306
selected - selezionate 0
volume - volumi 434
Totale 45.382
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022287 0 0 32 12 35 14 19 27 19 17 30 82
2022/2023462 51 46 20 42 57 70 4 35 93 10 24 10
2023/2024193 17 34 4 8 2 10 7 6 0 62 4 39
2024/2025864 2 15 21 8 254 75 33 89 121 42 101 103
2025/20263.057 510 572 108 206 122 177 361 169 201 290 99 242
2026/2027210 77 77 56 0 0 0 0 0 0 0 0 0
Totale 7.318