RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

BALATTI, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 2.704
EU - Europa 689
AS - Asia 395
SA - Sud America 99
AF - Africa 7
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.895
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Nazione #
US - Stati Uniti d'America 2.659
AT - Austria 188
IT - Italia 184
SG - Singapore 175
BR - Brasile 91
CN - Cina 79
FI - Finlandia 58
VN - Vietnam 53
DE - Germania 51
CA - Canada 39
GB - Regno Unito 39
UA - Ucraina 32
SE - Svezia 30
IE - Irlanda 26
RU - Federazione Russa 21
FR - Francia 20
JO - Giordania 18
ID - Indonesia 14
KR - Corea 12
NL - Olanda 9
SI - Slovenia 8
IN - India 7
JP - Giappone 4
MU - Mauritius 4
TW - Taiwan 4
BE - Belgio 3
CH - Svizzera 3
GR - Grecia 3
IQ - Iraq 3
UZ - Uzbekistan 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
BY - Bielorussia 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
EC - Ecuador 2
HK - Hong Kong 2
MX - Messico 2
PE - Perù 2
PH - Filippine 2
PL - Polonia 2
TR - Turchia 2
VE - Venezuela 2
ZA - Sudafrica 2
AR - Argentina 1
AZ - Azerbaigian 1
BD - Bangladesh 1
BN - Brunei Darussalam 1
CO - Colombia 1
DO - Repubblica Dominicana 1
EG - Egitto 1
ES - Italia 1
EU - Europa 1
GE - Georgia 1
HN - Honduras 1
HU - Ungheria 1
IL - Israele 1
IR - Iran 1
JM - Giamaica 1
KG - Kirghizistan 1
LK - Sri Lanka 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PK - Pakistan 1
PT - Portogallo 1
RO - Romania 1
RS - Serbia 1
TJ - Tagikistan 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
Totale 3.895
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Città #
Fairfield 371
Santa Clara 239
Woodbridge 218
Chandler 199
Vienna 191
Ashburn 177
Houston 170
Wilmington 162
Ann Arbor 149
Seattle 143
Cambridge 135
Singapore 120
Dearborn 91
Boardman 46
Lawrence 44
Medford 44
Council Bluffs 43
Beijing 38
Ottawa 37
Des Moines 33
Dong Ket 29
Milan 28
Dublin 25
Lucca 21
San Diego 19
Amman 18
Jacksonville 17
Helsinki 16
Washington 16
Jakarta 13
Phoenix 12
Redwood City 9
Amsterdam 8
Norwalk 8
Frankfurt am Main 7
Rome 7
San Jose 7
Shanghai 7
Changchun 6
London 6
São Paulo 6
Austin 5
Hefei 5
Los Angeles 5
Pistoia 5
Rio de Janeiro 5
Kilburn 4
Las Vegas 4
Livorno 4
New York 4
San Donato Milanese 4
The Dalles 4
Belo Horizonte 3
Brasília 3
Brussels 3
Daejeon 3
Nanjing 3
Newark 3
Santa Maria 3
Tashkent 3
Auburn Hills 2
Broken Arrow 2
Busto Arsizio 2
Changsha 2
Chongqing 2
Coroatá 2
Curitiba 2
Dalmine 2
Guangzhou 2
Guayaquil 2
Joinville 2
Jundiaí 2
Kunming 2
Lappeenranta 2
Manila 2
Marcianise 2
Mountain View 2
Munich 2
Patiāla 2
Porto Seguro 2
Portsmouth 2
Redmond 2
Ribeirão Preto 2
Secaucus 2
São João del Rei 2
Taipei 2
Treviglio 2
Yerevan 2
Aachen 1
Acton 1
Adapazarı 1
Alameda 1
Alumínio 1
Aparecida de Goiânia 1
Araraquara 1
Ashgabat 1
Atlanta 1
Bad Bellingen 1
Bady Bassitt 1
Baghdad 1
Totale 3.076
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Nome #
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 146
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 132
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory 126
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory 113
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 111
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 109
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 109
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning 109
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 108
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 107
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 106
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 105
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 104
PHYSICAL MODELING OF VOLTAGE-DRIVEN RESISTIVE SWITCHING IN OXIDE RRAM 102
Data retention statistics and modelling in HfO2 resistive switching memories 101
True random number generation by variability of resistive switching in oxide-based devices 100
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 96
Understanding pulsed-cycling variability and endurance in HfOx RRAM 95
Device and method for generating radom numbers 92
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 89
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 89
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 85
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 85
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 83
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 81
Statistical modeling of program and read variability in resistive switching devices 79
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 78
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 77
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics 75
Normally-off logic based on resistive switches - Part I: Logic gates 75
Ion migration model for resistive switching in transition metal oxides 74
Variability and cycling endurance in nanoscale resistive switching memory 73
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits 72
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 71
Understanding switching variability and random telegraph noise in resistive RAM 71
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 70
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 70
Filament evolution during resistive switching in oxide RRAM 67
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior 67
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 62
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 61
Dispositivo e metodo per generare numeri casuali 59
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 54
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop 47
Stress-induced asymmetric switching and filament instability in electrochemical memories 47
Totale 3.932
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Categoria #
all - tutte 14.517
article - articoli 7.946
book - libri 0
conference - conferenze 5.565
curatela - curatele 0
other - altro 0
patent - brevetti 709
selected - selezionate 0
volume - volumi 297
Totale 29.034
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020104 0 0 0 0 0 0 0 0 0 0 67 37
2020/2021327 32 19 23 12 20 21 15 22 26 43 24 70
2021/2022340 18 35 32 12 35 14 19 27 19 17 30 82
2022/2023462 51 46 20 42 57 70 4 35 93 10 24 10
2023/2024193 17 34 4 8 2 10 7 6 0 62 4 39
2024/2025745 2 15 21 8 254 75 33 89 121 42 85 0
Totale 3.932