BALATTI, SIMONE
BALATTI, SIMONE
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
2015-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
2016-01-01 Ambrogio, Stefano; Milo, Valerio; Wang, Zhongqiang; Balatti, Simone; Ielmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Gilmer, David C.; Ielmini, Daniele
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele; Gilmer, D. C.
Bipolar-switching model of RRAM by field- and temperature-activated ion migration
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Complementary switching in metal oxides: toward diode-less crossbar RRAMs
2011-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; Ielmini, Daniele
Complementary switching in oxide-based bipolar resistive switching memory (RRAM)
2013-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)
2015-01-01 Wang, Z. Q.; Ambrogio, Stefano; Balatti, Simone; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Data retention statistics and modelling in HfO2 resistive switching memories
2015-01-01 Ambrogio, Stefano; Balatti, Simone; Wang, Zhong Qiang; Chen, Yu Sheng; Lee, Heng Yuan; Chen, Frederick T.; Ielmini, Daniele
Device and method for generating radom numbers
2017-01-01 Ielmini, D.; Balatti, S.; Ambrogio, S.
Dispositivo e metodo per generare numeri casuali
2016-01-01 Ielmini, D.; Balatti, S.; Ambrogio, S.
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity
2015-01-01 Ielmini, D.; Ambrogio, S.; Balatti, S.; Wang, Z.
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
2012-01-01 Ielmini, Daniele; Nardi, Federico; Balatti, Simone
Filament evolution during resistive switching in oxide RRAM
2013-01-01 Ielmini, Daniele; Balatti, Simone; S., Larentis
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, V.; Wang, D.; Ielmini, Daniele
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Choi, Seol; Ielmini, Daniele
Ion migration model for resistive switching in transition metal oxides
2012-01-01 Ielmini, Daniele; S., Larentis; Balatti, Simone; Nardi, Federico; D. C., Gilmer
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
2013-01-01 Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
2016-01-01 Ambrogio, Stefano; Balatti, Simone; Milo, Valerio; Carboni, Roberto; Wang, Zhong Qiang; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele