BALATTI, SIMONE

BALATTI, SIMONE  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 20 di 45 (tempo di esecuzione: 0.049 secondi).
Titolo Data di pubblicazione Autori File
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems 1-gen-2015 WANG, ZHONGQIANGAMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) 1-gen-2016 Ambrogio, StefanoMilo, ValerioWang, ZhongqiangBalatti, SimoneIelmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 1-gen-2011 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 1-gen-2013 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Data retention statistics and modelling in HfO<inf>2</inf> resistive switching memories 1-gen-2015 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Device and method for generating radom numbers 1-gen-2017 D. IelminiS. BalattiS. Ambrogio
Dispositivo e metodo per generare numeri casuali 1-gen-2016 D. IelminiS. BalattiS. Ambrogio
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity 1-gen-2015 D. IelminiS. AmbrogioS. BalattiZ. Wang
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 1-gen-2012 IELMINI, DANIELENARDI, FEDERICOBALATTI, SIMONE
Filament evolution during resistive switching in oxide RRAM 1-gen-2013 IELMINI, DANIELEBALATTI, SIMONE +
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM) 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONECHOI, SEOLIELMINI, DANIELE
Ion migration model for resistive switching in transition metal oxides 1-gen-2012 IELMINI, DANIELEBALATTI, SIMONENARDI, FEDERICO +
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 1-gen-2013 BALATTI, SIMONEIELMINI, DANIELE +
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM 1-gen-2016 AMBROGIO, STEFANOBALATTI, SIMONEMILO, VALERIOCARBONI, ROBERTOIELMINI, DANIELE +