The present invention relates to a device (1) for generating random numbers, comprising a pair of memristors (P,Q). The pair of memristors comprises a first and a second memristor, each memristor of the pair in turn comprises a top electrode (TE), a bottom electrode (BE) and an intermediate layer (SL) adapted to switch resistance in response to predetermined voltage values applied between the top electrode and the bottom electrode. Each memristor (P, Q) is operatively connected to an output terminal by means of its bottom electrode. A control logic is connected to the memristors for applying suitable voltages necessary to determine a change of resistance in at least one memristor of the pair. In detail, the control logic is configured to: fix the voltage of the output terminal to a predetermined value and apply said transition voltage to cause a change of resistance in at least one memristor of the pair, leave the voltage at said output terminal floating and apply to the top electrodes of said first and second memristor two read voltages having opposite sign and amplitude lower than said transition voltage.

Device and method for generating radom numbers

D. Ielmini;S. Balatti;S. Ambrogio
2017

Abstract

The present invention relates to a device (1) for generating random numbers, comprising a pair of memristors (P,Q). The pair of memristors comprises a first and a second memristor, each memristor of the pair in turn comprises a top electrode (TE), a bottom electrode (BE) and an intermediate layer (SL) adapted to switch resistance in response to predetermined voltage values applied between the top electrode and the bottom electrode. Each memristor (P, Q) is operatively connected to an output terminal by means of its bottom electrode. A control logic is connected to the memristors for applying suitable voltages necessary to determine a change of resistance in at least one memristor of the pair. In detail, the control logic is configured to: fix the voltage of the output terminal to a predetermined value and apply said transition voltage to cause a change of resistance in at least one memristor of the pair, leave the voltage at said output terminal floating and apply to the top electrodes of said first and second memristor two read voltages having opposite sign and amplitude lower than said transition voltage.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1066427
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