FARRONATO, MATTEO
FARRONATO, MATTEO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
Development of Crosspoint Memory Arrays for Neuromorphic Computing
2024-01-01 Ricci, Saverio; Mannocci, Piergiulio; Farronato, Matteo; Milozzi, Alessandro; Ielmini, Daniele
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning
2022-01-01 Ricci, S; Mannocci, P; Farronato, M; Hashemkhani, S; Ielmini, D
Hybrid 2D-CMOS microchips for memristive applications
2023-01-01 Zhu, Kaichen; Pazos, Sebastian; Aguirre, Fernando; Shen, Yaqing; Yuan, Yue; Zheng, Wenwen; Alharbi, Osamah; Villena, Marco A; Fang, Bin; Li, Xinyi; Milozzi, Alessandro; Farronato, Matteo; Muñoz-Rojo, Miguel; Wang, Tao; Li, Ren; Fariborzi, Hossein; Roldan, Juan B; Benstetter, Guenther; Zhang, Xixiang; Alshareef, Husam N; Grasser, Tibor; Wu, Huaqiang; Ielmini, Daniele; Lanza, Mario
In-Memory Computing for Machine Learning and Deep Learning
2023-01-01 Lepri, N.; Glukhov, A.; Cattaneo, L.; Farronato, M.; Mannocci, P.; Ielmini, D.
In-memory computing with emerging memory devices: Status and outlook
2023-01-01 Mannocci, P.; Farronato, M.; Lepri, N.; Cattaneo, L.; Glukhov, A.; Sun, Z.; Ielmini, D.
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference
2022-01-01 Farronato, Matteo; Melegari, Margherita; Ricci, Saverio; Hashemkani, Shahin; Compagnoni, Christian Monzio; Ielmini, Daniele
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration
2022-01-01 Farronato, Matteo; Melegari, Margherita; Ricci, Saverio; Hashemkhani, Shahin; Bricalli, Alessandro; Ielmini, Daniele
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories
2020-01-01 Wang, Wei; Covi, Erika; Milozzi, Alessandro; Farronato, Matteo; Ricci, Saverio; Sbandati, Caterina; Pedretti, Giacomo; Ielmini, Daniele
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study
2024-01-01 Porzani, M.; Ricci, S.; Farronato, M.; Ielmini, D.
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
2024-01-01 Porzani, M.; Carletti, F.; Ricci, S.; Farronato, M.; Ielmini, D.
Redox memristors with volatile threshold switching behavior for neuromorphic computing
2022-01-01 Wang, Yu-Hao; Gong, Tian-Cheng; Ding, Ya-Xin; Li, Yang; Wang, Wei; Chen, Zi-Ang; Du, Nan; Covi, Erika; Farronato, Matteo; Ielmini, Daniele; Zhang, Xu-Meng; Luo, Qing
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering
2023-01-01 Farronato, Matteo; Mannocci, Piergiulio; Melegari, Margherita; Ricci, Saverio; Compagnoni, Christian Monzio; Ielmini, Daniele
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization
2021-01-01 Covi, E.; Wang, W.; Lin, Y.; Farronato, M.; Ambrosi, E.; Ielmini, D.
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling
2021-01-01 Wang, W.; Covi, E.; Lin, Y.; Ambrosi, E.; Milozzi, A.; Sbandati, C.; Farronato, M.; Ielmini, D.