PIROVANO, AGOSTINO

PIROVANO, AGOSTINO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

Mostra records
Risultati 1 - 20 di 25 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autori File
2D QM simulation and optimization of decanano non-overlapped MOS devices 1-gen-2003 GUSMEROLI, RICCARDOSOTTOCORNOLA SPINELLI, ALESSANDROPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 1-gen-2009 BONIARDI, MATTIAREDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELE +
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 1-gen-2008 REDAELLI, ANDREAPIROVANO, AGOSTINOIELMINI, DANIELELACAITA, ANDREA LEONARDO +
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique 1-gen-2000 LACAITA, ANDREA LEONARDOPIROVANO, AGOSTINO +
Anomalous cells with low resistance in phase change memory arrays 1-gen-2007 MANTEGAZZA, DAVIDEIELMINI, DANIELEPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO
Assessment of threshold switching dynamics in phase-change chalcogenide memories 1-gen-2005 IELMINI, DANIELELACAITA, ANDREA LEONARDOMANTEGAZZA, DAVIDEPIROVANO, AGOSTINO +
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress 1-gen-2002 MONZIO COMPAGNONI, CHRISTIANPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO
Explaining the dependences of the hole and electron mobilities in Si inversion layers 1-gen-2000 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics 1-gen-2008 MANTEGAZZA, DAVIDEIELMINI, DANIELEPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 1-gen-2011 BONIARDI, MATTIAIELMINI, DANIELEREDAELLI, ANDREAPIROVANO, AGOSTINOVARESI, ENRICOLACAITA, ANDREA LEONARDO +
Impact of Material Composition on the write performance of Phase-Change Memory Devices 1-gen-2010 BONIARDI, MATTIAIELMINI, DANIELELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO +
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 1-gen-2011 BONIARDI, MATTIAREDAELLI, ANDREAIELMINI, DANIELEPIROVANO, AGOSTINO +
Multiphysics modeling of PCM devices for scaling investigation 1-gen-2010 IELMINI, DANIELEREDAELLI, ANDREAPIROVANO, AGOSTINO +
Novel Low-temperature C-V Technique for MOS Doping Profile Determination Near The Si/SiO2 Interface 1-gen-2001 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET’s 1-gen-2000 PIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations 1-gen-2004 GUSMEROLI, RICCARDOSOTTOCORNOLA SPINELLI, ALESSANDROPIROVANO, AGOSTINOLACAITA, ANDREA LEONARDO +
Phase change memory device for multibit storage 1-gen-2007 A. RedaelliA. Pirovano +
Reliability study of phase-change non-volatile memories. 1-gen-2004 PIROVANO, AGOSTINOREDAELLI, ANDREAIELMINI, DANIELELACAITA, ANDREA LEONARDO +
Reversing a potential polarity for reading phase change cells to shorten a recovery delay after programming 1-gen-2010 IELMINI, DANIELEPIROVANO, AGOSTINO +
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 1-gen-2009 BONIARDI, MATTIAIELMINI, DANIELELAVIZZARI, SIMONELACAITA, ANDREA LEONARDOREDAELLI, ANDREAPIROVANO, AGOSTINO