AMBROSI, ELIA

AMBROSI, ELIA  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 20 di 23 (tempo di esecuzione: 0.041 secondi).
Titolo Data di pubblicazione Autori File
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) 1-gen-2021 Pedretti G.Ambrosi E.Ielmini D.
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion 1-gen-2019 Ambrosi E.Ielmini D.Zaffora A. +
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices 1-gen-2019 Ambrosi E.Bricalli A.Laudato M.Ielmini D.
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories 1-gen-2020 Sun, ZhongAmbrosi, EliaPedretti, GiacomoBricalli, AlessandroIelmini, Daniele
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices 1-gen-2020 Sun Z.Pedretti G.Ambrosi E.Bricalli A.Ielmini D.
In‐Memory Eigenvector Computation in Time O (1) 1-gen-2020 Sun, ZhongPedretti, GiacomoAmbrosi, EliaBricalli, AlessandroIelmini, Daniele
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage 1-gen-2019 POLINO, NICOLA FRANCESCOLaudato M.Ambrosi E.Bricalli A.Ielmini D.
Logic Computing with Stateful Neural Networks of Resistive Switches 1-gen-2018 Sun, ZhongAmbrosi, EliaBricalli, AlessandroIelmini, Daniele
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion 1-gen-2019 Wang W.Covi E.Ambrosi E.Ielmini D. +
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing 1-gen-2019 Wang W.Bricalli A.Laudato M.Ambrosi E.COVI, ERIKAIelmini D.
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices 1-gen-2017 Bricalli, AlessandroAmbrosi, EliaLaudato, MarioIelmini, Daniele +
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices 1-gen-2018 BRICALLI, ALESSANDROAMBROSI, ELIALaudato, MarioIelmini, Daniele +
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks 1-gen-2018 MILO, VALERIOPEDRETTI, GIACOMOLaudato, M.BRICALLI, ALESSANDROAMBROSI, ELIABIANCHI, STEFANOCHICCA, ELISABETTAIelmini, D.
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? 1-gen-2018 Ielmini D.Bricalli A.Ambrosi E.Xia Q. +
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio 1-gen-2016 Bricalli, A.Ambrosi, E.Laudato, M.Ielmini, D. +
Solving matrix equations in one step with cross-point resistive arrays 1-gen-2019 Sun Z.Pedretti G.Ambrosi E.Bricalli A.Wang W.Ielmini D.
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices 1-gen-2019 Wang W.Ambrosi E.Bricalli A.Laudato M.Sun Z.Ielmini D. +
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization 1-gen-2021 Covi E.Wang W.Farronato M.Ambrosi E.Ielmini D. +
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling 1-gen-2021 Wang W.Covi E.Ambrosi E.Milozzi A.Farronato M.Ielmini D. +
Time Complexity of In-Memory Solution of Linear Systems 1-gen-2020 Sun, ZhongPedretti, GiacomoMannocci, PiergiulioAmbrosi, EliaBricalli, AlessandroIelmini, Daniele