LAUDATO, MARIO
LAUDATO, MARIO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
Bipolar switching in chalcogenide phase change memory
2016-01-01 Ciocchini, Nicola; Laudato, Mario; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, ANDREA LEONARDO; Ielmini, Daniele
Bipolar switching operation in phase change memory devices for high temperature retention
2016-01-01 Ciocchini, N.; Laudato, M.; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, A. L.; Ielmini, D.
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability
2016-01-01 Ciocchini, Nicola; Laudato, Mario; Lacaita, ANDREA LEONARDO; Ielmini, Daniele; Boniardi, M.; Varesi, E.; Fantini, P.
Brain-inspired neuromorphic computing with phase change memory (PCM) synapses
2017-01-01 Laudato, M.; Pedretti, G.; Ielmini, D.
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
2019-01-01 Ambrosi, E.; Bricalli, A.; Laudato, M.; Ielmini, D.
Impact of thermoelectric effects on phase change memory characteristics
2015-01-01 Ciocchini, Nicola; Laudato, Mario; Leone, Antonio; Fantini, Paolo; Lacaita, ANDREA LEONARDO; Ielmini, Daniele
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage
2019-01-01 Polino, NICOLA FRANCESCO; Laudato, M.; Ambrosi, E.; Bricalli, A.; Ielmini, D.
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
2019-01-01 Wang, W.; Bricalli, A.; Laudato, M.; Ambrosi, E.; Covi, Erika; Ielmini, D.
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices
2017-01-01 Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
2018-01-01 Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
2018-01-01 Milo, Valerio; Pedretti, Giacomo; Laudato, M.; Bricalli, Alessandro; Ambrosi, Elia; Bianchi, Stefano; Chicca, Elisabetta; Ielmini, D.
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
2016-01-01 Bricalli, A.; Ambrosi, E.; Laudato, M.; Maestro, M.; Rodriguez, R.; Ielmini, D.
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
2019-01-01 Wang, W.; Wang, M.; Ambrosi, E.; Bricalli, A.; Laudato, M.; Sun, Z.; Chen, X.; Ielmini, D.
Universal Thermoelectric Characteristic in Phase Change Memories
2015-01-01 Ciocchini, Nicola; Laudato, Mario; Leone, A.; Fantini, P.; Lacaita, ANDREA LEONARDO; Ielmini, Daniele
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses
2016-01-01 Ambrogio, Stefano; Ciocchini, Nicola; Laudato, Mario; Milo, Valerio; Pirovano, Agostino; Fantini, Paolo; Ielmini, Daniele
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling
2019-01-01 Wang, W.; Laudato, M.; Ambrosi, E.; Bricalli, A.; Covi, E.; Lin, Y. -H.; Ielmini, D.
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
2019-01-01 Wang, W.; Laudato, M.; Ambrosi, E.; Bricalli, A.; Covi, E.; Lin, Y. -H.; Ielmini, D.