LAUDATO, MARIO
LAUDATO, MARIO
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
Bipolar switching in chalcogenide phase change memory
2016-01-01 Ciocchini, Nicola; Laudato, Mario; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, ANDREA LEONARDO; Ielmini, Daniele
Impact of thermoelectric effects on phase change memory characteristics
2015-01-01 Ciocchini, Nicola; Laudato, Mario; Leone, Antonio; Fantini, Paolo; Lacaita, ANDREA LEONARDO; Ielmini, Daniele
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices
2017-01-01 Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
2018-01-01 Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
2019-01-01 Wang, W.; Wang, M.; Ambrosi, E.; Bricalli, A.; Laudato, M.; Sun, Z.; Chen, X.; Ielmini, D.
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses
2016-01-01 Ambrogio, Stefano; Ciocchini, Nicola; Laudato, Mario; Milo, Valerio; Pirovano, Agostino; Fantini, Paolo; Ielmini, Daniele
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling
2019-01-01 Wang, W.; Laudato, M.; Ambrosi, E.; Bricalli, A.; Covi, E.; Lin, Y. -H.; Ielmini, D.
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
2019-01-01 Wang, W.; Laudato, M.; Ambrosi, E.; Bricalli, A.; Covi, E.; Lin, Y. -H.; Ielmini, D.