In this paper we propose a new method of estimating Joule heating in a resistive switching SiOx based device through the use of a micro-Thermal stage (MTS). We show an electro-Thermal characterization of the device during set/reset operation using the MTS structure as a thermometer, we then attempt to reconstruct the complete heating profile of the device through numerical modeling in COMSOL, then we simulate the reset condition of the device.

Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage

POLINO, NICOLA FRANCESCO;Laudato M.;Ambrosi E.;Bricalli A.;Ielmini D.
2019

Abstract

In this paper we propose a new method of estimating Joule heating in a resistive switching SiOx based device through the use of a micro-Thermal stage (MTS). We show an electro-Thermal characterization of the device during set/reset operation using the MTS structure as a thermometer, we then attempt to reconstruct the complete heating profile of the device through numerical modeling in COMSOL, then we simulate the reset condition of the device.
European Solid-State Device Research Conference
978-1-7281-1539-9
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/1127730
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